Interconnect structure surface modifications by passivating agents
AssigneeIntel Corporation
InventorsFlorian Gstrein, James M. Blackwell, Eungnak Han, Rami Hourani, Tayseer Mahdi
Life of this patent
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Abstract
Embodiments herein describe techniques for a semiconductor device including an interconnect structure. The interconnect structure may have a segment of a passivant layer including a SAM. The SAM may include head groups, and chains attached to the head groups. The chains include functional groups that are cross-linkable at end or side of the chains to result in chain extension by reacting with another SAM or polymer, densification by crosslinking with an adjacent SAM, or polymerization having an initiator as the SAM or the SAM attached to another SAM. Other embodiments may be described and/or claimed.
Claims18
An integrated circuit, comprising:
- an interconnect structure including one or more layers above a substrate, wherein a surface of a layer of the one or more layers includes a first portion of the surface having a first material, and a second portion of the surface having a second material;
- and
- a segment of a passivant layer attached to the first portion of the surface, the passivant layer including a self-assembled monolayers (SAM), wherein the SAM includes head groups selectively bounded to the first portion of the surface, and chains attached to the head groups, and wherein the chains include functional groups that are cross-linkable at end or side of the chains to result in chain extension by reacting with another SAM or polymer, densification by crosslinking with an adjacent SAM, or polymerization having an initiator as the SAM or the SAM attached to another SAM, the functional groups in the chains selected from the group consisting of CN, OH groups, N3, C≡C, C═C, amines (NH), epoxides, cyclopropanes, imino groups, aromatic groups, halogens, SiH, SiCl, vinylsilane, or COOH.
A computing device, comprising:
- a printed circuit board (PCB);
- and
- a semiconductor device coupled to the PCB and including an active device or a passive device, wherein the semiconductor device includes:
- an interconnect structure including one or more layers above a substrate, wherein a surface of a layer of the one or more layers includes a first portion of the surface having a first material, and a second portion of the surface having a second material;
- and
- a segment of a passivant layer attached to the first portion of the surface, the passivant layer including a self-assembled monolayers (SAM), wherein the SAM includes head groups selectively bounded to the first portion of the surface, and chains attached to the head groups, and wherein the chains include functional groups that are cross-linkable at end or side of the chains to result in chain extension by reacting with another SAM or polymer, densification by crosslinking with an adjacent SAM, or polymerization having an initiator as the SAM or the SAM attached to another SAM, the functional groups in the chains selected from the group consisting of CN, OH groups, N3, C≡C, C═C, amines (NH), epoxides, cyclopropanes, imino groups, aromatic groups, halogens, SiH, SiCl, vinylsilane, or COOH.
Dependencies are inferred from the claim text.