RF amplifiers having shielded transmission line structures
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsKwangmo Chris Lim, Basim Noori, Qianli Mu, Marvin Marbell, Scott Sheppard, Alexander Komposch
Life of this patent
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Abstract
RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.
Claims17
A radio frequency (“RF”) transistor amplifier, comprising:
- an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and gate fingers, drain fingers and source fingers extending on an upper surface of the semiconductor layer structure;
- and
- a plurality of conductive pillars extending perpendicular to the upper surface of the semiconductor layer structure, the conductive pillars including a first conductive pillar that is electrically connected to either the gate fingers or the drain fingers and first and second conductive ground pillars that are on opposed sides of the first conductive pillar, the first and second conductive ground pillars electrically connected to the source fingers,
- wherein the first conductive pillar vertically overlaps an active region of the RF transistor amplifier die.
A radio frequency (“RF”) transistor amplifier, comprising:
- an RF transistor amplifier die comprising a gate terminal, a drain terminal, and a source terminal on a first surface of the RF transistor amplifier die;
- and
- an interconnect structure that is in a stacked arrangement with the RF transistor amplifier die, the interconnect structure including a shielded transmission line structure, wherein a ground conductor of the shielded transmission line structure is electrically connected to the source terminal and a signal conductor of the shielded transmission line structure is electrically connected to one of the gate terminal and the drain terminal,
- wherein the coupling element includes a plurality of conductive pillars, and
- wherein the conductive pillars are arranged to form a second shielded transmission line structure.
A radio frequency (“RF”) transistor amplifier, comprising:
- an RF transistor amplifier die comprising a gate terminal, a drain terminal, and a source terminal on a first surface of the RF transistor amplifier die;
- and
- an interconnect structure that is in a stacked arrangement with the RF transistor amplifier die, the interconnect structure including a shielded transmission line structure, wherein a ground conductor of the shielded transmission line structure is electrically connected to the source terminal and a signal conductor of the shielded transmission line structure is electrically connected to one of the gate terminal and the drain terminal
- wherein the shielded transmission line structure comprises a stripline transmission line segment.
Dependencies are inferred from the claim text.