Back to results
US 12,034,072 B2Granted
Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsYueying Liu, Saptharishi Sriram, Scott Sheppard, Jennifer Gao
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a plurality of unit cell transistors on a common semiconductor structure, the unit cell transistors electrically connected in parallel, and each unit cell transistor including a respective gate finger. Respective threshold voltages of first and second of the unit cell transistors differ by at least 0.1 volts and/or threshold voltages of first and second segments of a third of the unit cell transistors differ by at least 0.1 volts.
Claims20
A semiconductor device, comprising:
- a plurality of unit cell transistors on a semiconductor structure, the semiconductor structure including a gallium nitride based barrier layer, the unit cell transistors electrically connected in parallel, and each of the unit cell transistors including a respective gate finger;
- and
- a voltage divider circuit that includes a first output that is coupled to the respective gate fingers of a first subset of the unit cell transistors and a second output that is coupled to the respective gate fingers of a second subset of the unit cell transistors,
- wherein the first and second outputs are configured to apply first and second voltages to the respective gate fingers of the first and second subsets of the unit cell transistors, respectively,
- wherein the first and second voltages differ by at least 0.1 volts.
2 more elements
A semiconductor device, comprising:
- a wafer having a gallium nitride based layer;
- a plurality of unit cell transistors on/in the wafer, the unit cell transistors electrically connected in parallel and each of the unit cell transistors including a respective gate finger;
- and
- a voltage divider circuit that is at least partially on the wafer, the voltage divider circuit including a first output that is coupled to gate fingers of a first subset of the unit cell transistors, a second output that is coupled to gate fingers of a second subset of the unit cell transistors, and a first resistor that is coupled between the first output and the second output.
1 more element
Dependencies are inferred from the claim text.