Thyristor semiconductor device and corresponding manufacturing method

A method, comprising:

• forming a first layer embedded in a substrate, the first layer having a first type of conductivity;
• forming a second layer embedded in the first layer, the second layer having a second type of conductivity opposite to the first type of conductivity, the second layer being separated from the substrate by the first layer;
• forming a first dielectric structure partially embedded within the first layer and laterally positioned between the first layer and the second layer;
• forming a third layer stacked over the second layer, the third layer having the first type of conductivity;
• and
• forming a fourth layer stacked over the third layer, the fourth layer having the second type of conductivity.

A device, comprising:

• an anode region embedded in a substrate;
• a first base region embedded in the anode region;
• a second base region over the first base region, the first base region and the second base region having opposite types of conductivity and partially offsetting with one another;
• and
• a cathode region over the second base region.