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US 12,033,806 B2Granted
Method of manufacturing a trench capacitor with wafer bow
AssigneeSK keyfoundry Inc.
InventorSeung Mo Jo
Life of this patent
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Abstract
A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.
Claims18
A trench capacitor manufacturing method, comprising:
- forming a first deep trench and a second deep trench in a substrate;
- depositing at least one dielectric layer and at least one conductive layer alternately in the first deep trench and the second deep trench;
- performing a gap-fill process by depositing a gap-fill insulating layer on the at least one conductive layer and the at least one dielectric layer, wherein a first void and a second void are formed in the first deep trench and the second deep trench, respectively;
- patterning the gap-fill insulating layer to form a first gap-fill insulating film and a second gap-fill insulating film spaced apart from the first gap-fill insulating film on the first and second deep trenches, respectively;
- patterning the at least one conductive layer using the first gap-fill insulating film and the second gap-fill insulating film as a mask to form a first upper electrode and a second upper electrode on the first and second deep trenches, respectively;
- depositing a first inter-layer insulating film on the first gap-fill insulating film, the second gap-fill insulating film, the first upper electrode, and the second upper electrode;
- forming first level metal interconnects on the first inter-layer insulating film;
- forming a second inter-layer insulating film on the first inter-layer insulating film;
- and
- forming second level metal interconnects on the second inter-layer insulating film.
7 more elements
A trench capacitor manufacturing method, comprising:
- forming a first deep trench and a second deep trench in a substrate;
- sequentially forming a lower dielectric layer, a lower conductive layer, an upper dielectric layer, and an upper conductive layer on the first and second deep trenches;
- performing a gap-fill process by depositing a gap-fill insulating layer on the upper conductive layer, wherein a void is formed in the gap-fill insulating layer;
- patterning the gap-fill insulating layer to form a first gap-fill insulating film and a second gap-fill insulating film spaced apart from the first gap-fill insulating film on the first and second deep trenches, respectively;
- patterning the upper conductive layer to form a first upper electrode and a second upper electrode;
- depositing a first inter-layer insulating film on the first gap-fill insulating film, the second gap-fill insulating film, the first upper electrode, and the second upper electrode;
- forming first level metal interconnects on the first inter-layer insulating film;
- forming a second inter-layer insulating film on the first inter-layer insulating film;
- and
- forming second level metal interconnects on the second inter-layer insulating film.
7 more elements
A trench capacitor manufacturing method, the method comprising:
- forming a deep trench in a substrate;
- sequentially depositing a lower dielectric layer, a lower conductive layer, an upper dielectric layer, and an upper conductive layer in the deep trench;
- performing a gap-fill process by depositing a gap-fill insulating layer on the upper conductive layer, wherein the gap-fill insulating layer is disposed in the deep trench and a void is formed in the deep trench;
- patterning the gap-fill insulating layer to form a gap-fill insulating film pattern on the deep trench;
- patterning the upper conductive layer to form an upper electrode on the deep trench using the gap-fill insulating film pattern as a mask;
- patterning the lower conductive layer to form a lower electrode on the substrate;
- depositing a first inter-layer insulating film on the gap-fill insulating film pattern, the upper electrode, and the lower electrode;
- forming a first level metal interconnect on the first inter-layer insulating film;
- forming a second inter-layer insulating film on the first inter-layer insulating film;
- and
- forming a second level metal interconnect on the second inter-layer insulating film,
- wherein the first level metal interconnect is in direct contact with the upper electrode, and the first level metal interconnect overlaps the void in the deep trench.
9 more elements
Dependencies are inferred from the claim text.