Resist material and patterning process

A resist material comprising:

• (i) a compound (i-1), which is a (partial) condensate or a (partial) hydrolysis-condensate of a metal compound shown by the following general formula (A-1), or a compound (i-2), which is a reaction product of the compound (i-1) and a dihydric or trihydric alcohol shown by the following general formula (A-2),
• (ii) a photo-acid generator,
• wherein the component (ii) is a compound that generates a carboxylic acid shown by the following general formula (B-3), or a compound that generates a carboxylic acid shown by any of the following formula (T),
• wherein R9 represents a linear, branched, or cyclic alkyl group, alkenyl group, or oxoalkyl group having 5 to 20 carbon atoms optionally including an ester bond or ether bond, or an aryl group, aralkyl group, or aryloxoalkyl group having 6 to 20 carbon atoms optionally including an ester bond or ether bond, and one or more hydrogen atoms are optionally substituted with a halogen atom, hydroxy group, carboxy group, or amino group;
• furthermore, R9 optionally represents a hydroxy group;
• Rf1 and Rf2 each independently represents a fluorine atom or trifluoromethyl group,
• (iii) a basic compound, and
• (iv) an organic solvent,
• M(OR1A)4 (A-1)
• wherein, M represents an element selected from titanium, zirconium, or hafnium;
• and R1A represents a linear or branched alkyl group having 1 to 12 carbon atoms;
• and
• R2A(OH)m (A-2)
• wherein “m” represents 2 or 3;
• when “m” represents 2, R2A represents a divalent group selected from a substituted or unsubstituted, linear, branched, or cyclic alkylene group, alkenylene group, alkynylene group, or aralkylene group having 2 to 20 carbon atoms optionally including an ester bond or ether bond;
• when “m” represents 3, R2A represents a trivalent group, which is the divalent group having one hydrogen atom removed, and
• wherein the resist material is a negative type resist material.