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US 12,031,987 B2Granted
System and method for transistor pathogen detector
AssigneeAkhan Semiconductor, Inc.
InventorsAdam Khan, Ernest Schirmann, Kiran Kumar Kovi
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Abstract
Disclosed herein is a system and method for transistor pathogen virus detector in which one embodiment may include a substrate layer, a silicon dioxide layer on the substrate layer, a nanocrystalline diamond layer on the silicon dioxide layer, a graphene oxide layer on the nanocrystalline diamond layer, fluorinated graphene oxide portions; and a linker layer, the linker layer including a plurality of pathogen receptors.
Claims20
A transistor pathogen detector, comprising:
- A substrate layer,
- a silicon dioxide layer on the substrate layer,
- a nanocrystalline diamond layer on the silicon dioxide layer,
- a graphene oxide layer on the nanocrystalline diamond layer,
- fluorinated graphene oxide portions;
- and
- a linker layer, the linker layer including a plurality of pathogen receptors, wherein the transistor pathogen detector functions as a biosensor field effect transistor.
4 more elements
A method of fabricating a pathogen detector, including the steps of:
- selecting a substrate;
- forming a silicon dioxide layer upon the substrate;
- forming a nanocrystalline diamond layer on the silicon dioxide layer;
- forming a graphene oxide layer on the nanocrystalline diamond layer;
- converting at least a portion of the graphene oxide layer to fluorinated graphene oxide;
- and
- forming a linker layer on at least a portion of the fluorinated graphene oxide layer;
- and
- binding a pathogen receptor to the linker layer, wherein the pathogen detector functions as a biosensor field effect transistor.
6 more elements
Dependencies are inferred from the claim text.