Magnetic memory device including magnetoresistance effect element

A magnetic memory device comprising:

• a magnetoresistance effect element comprising:
• a first magnetic layer having a fixed magnetization direction;
• a second magnetic layer having a fixed magnetization direction;
• a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a variable magnetization direction;
• a first nonmagnetic layer provided between the first magnetic layer and the third magnetic layer;
• and
• a second nonmagnetic layer provided between the second magnetic layer and the third magnetic layer;
• and
• a two-terminal switching element connected in series to the magnetoresistance effect element, being configured to change from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals thereof is higher than or equal to a threshold voltage,
• wherein:
• the first nonmagnetic layer is an insulating layer,
• the second nonmagnetic layer is an insulating layer,
• the first nonmagnetic layer corresponds to a first tunnel barrier layer, and
• the second nonmagnetic layer corresponds to a second tunnel barrier layer.

A magnetic memory device comprising:

• a magnetoresistance effect element comprising:
• a first magnetic layer having a fixed magnetization direction;
• a second magnetic layer having a fixed magnetization direction;
• a third magnetic layer provided between the first magnetic layer and the second magnetic layer, and having a variable magnetization direction;
• a first nonmagnetic layer provided between the first magnetic layer and the third magnetic layer;
• and
• a second nonmagnetic layer provided between the second magnetic layer and the third magnetic layer;
• and
• a two-terminal switching element connected in series to the magnetoresistance effect element, being configured to change from an electrically nonconductive state to an electrically conductive state when a voltage applied between two terminals thereof is higher than or equal to a threshold voltage,
• wherein:
• the first nonmagnetic layer is an insulating layer,
• the second nonmagnetic layer is an insulating layer,
• the first nonmagnetic layer contains magnesium (Mg) and oxygen (O), and
• the second nonmagnetic layer contains magnesium (Mg) and oxygen (O).