Integrated assemblies and methods of forming integrated assemblies

An integrated assembly, comprising:

• a first channel structure extending substantially vertically;
• a second channel structure extending substantially vertically;
• a stack of insulating materials comprising a lower tier of a first insulating material, a higher tier of the first insulating material and an intermediate tier of a second insulating material;
• a gating structure extending within the stack of insulating materials between the first channel structure and the second channel structure and having a first gating region extending along the first channel structure, a second gating region extending along the second channel structure, and an interconnecting region extending laterally between the first and second gating regions;
• a first etch-resistant material over the gating structure;
• a second etch-resistant material extending laterally between the first and second gating regions;
• and
• first and second conductive structures extending through the first etch-resistant material, the first conductive structure being over the first channel structure and the second conductive structure being over the second channel structure.