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US 12,028,035 B2Granted
Monolithic integrated BAW resonator production method
AssigneeHuawei Technologies Co., Ltd.
InventorsZhengyu He, Huilong Xu
Life of this patent
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Abstract
This application provides a monolithic integrated BAW resonator production method, including: preparing an imprint template; forming a mask material layer on a substrate; pressing the mask material layer by using the imprint template in a direction of the substrate, to form a mask groove; performing plasma etching on the substrate by using the mask material layer, as a mask, that is used to form the mask groove, to form, on the substrate, grooves that one-to-one correspond to positions of several mask grooves; and forming, in the several grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are sequentially stacked, to form resonators of different frequencies.
Claims19
A monolithic integrated bulk acoustic wave (BAW) resonator production method, comprising:
- forming an imprint template, wherein the imprint template comprises an imprint plate and a plurality of imprint dies protruding from a surface of the imprint plate, and at least two imprint dies of the plurality of imprint dies have different heights relative to the surface of the imprint plate;
- forming a mask material layer on a substrate;
- pressing the mask material layer in a thickness direction of the substrate using the imprint template, to form, on the mask material layer through imprinting, a mask pattern layer, wherein the mask pattern layer comprises a plurality of mask grooves having depths corresponding to heights of the imprint dies;
- plasma etching the substrate using the mask material layer as a mask, to form, on a surface of the substrate, grooves that one-to-one correspond to positions of the plurality of mask grooves, wherein depths of at least two grooves in the grooves are different, the depths of the at least two grooves being different corresponds to the mask grooves having depths corresponding to the different heights of the imprint dies, and the grooves in the substrate are formed in a single plasma etching process using only the mask material layer as a mask;
- and
- forming, in the grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are sequentially stacked in a direction perpendicular to a major surface of the substrate, wherein in the direction perpendicular to the major surface of the substrate, thicknesses of the bottom electrode layers are the same and are all less than depths of the grooves, and piezoelectric layer thicknesses of at least two piezoelectric layers are different, or top electrode layer thicknesses of at least two top electrode layers are different, and wherein each bottom electrode layer is formed using a single photolithography process that uses the mask pattern layer as a mask, and each piezoelectric layer is formed using another single photolithography process that uses the mask pattern layer as a mask.
3 more elements
A method, comprising:
- forming an imprint template, wherein the imprint template comprises an imprint plate and a plurality of imprint dies protruding from a surface of the imprint plate, and at least two imprint dies of the plurality of imprint dies have different heights relative to the surface of the imprint plate;
- forming a mask material layer on a substrate;
- applying the imprint template to the mask material layer, to form, on the mask material layer, a mask pattern layer, wherein the mask pattern layer comprises a plurality of mask grooves having different depths;
- etching the substrate using the mask material layer as a mask, to form, on a surface of the substrate, grooves that correspond to positions of the plurality of mask grooves, wherein depths of at least two grooves in the grooves are different, the depths of the at least two grooves being different corresponds to the mask grooves having depths corresponding to the different heights of the imprint dies, and the grooves in the substrate are formed in a single etching process using only the mask material layer as a mask;
- and
- forming, in the grooves, bottom electrode layers, piezoelectric layers, and top electrode layers that are stacked in a direction that is perpendicular to a major surface of the substrate, wherein in the direction that is perpendicular to the major surface of the substrate, thicknesses of the bottom electrode layers are the same and are all less than depths of the grooves, and piezoelectric layer thicknesses of at least two piezoelectric layers are different, or top electrode layer thicknesses of at least two top electrode layers are different, and wherein each bottom electrode layer is formed using a single photolithography process that uses the mask pattern layer as a mask, and each piezoelectric layer is formed using another single photolithography process that uses the mask pattern layer as a mask.
3 more elements
Dependencies are inferred from the claim text.