Semiconductive ceramic member

A semiconductive ceramic member comprising:

• a plurality of aluminum oxide crystal grains;
• and a plurality of titanium oxide crystal grains, wherein
• a total content of aluminum oxide and titanium oxide is 99% by mass or more per 100% by mass of all constituents,
• a content of the aluminum oxide is 86% by mass or more and 96% by mass or less and a content of the titanium oxide is 4% by mass or more and 14% by mass or less per 100% by mass of the aluminum oxide and the titanium oxide in total,
• a peak of TiOx (0<x<2) is present within a binding energy range of 456 eV to 462 eV in X-ray photoelectron spectroscopy measurement,
• the semiconductive ceramic member further comprises silicon, and
• a content of the silicon in terms of its oxide in a first region surrounded by two of the aluminum oxide crystal grains and one of the titanium oxide crystal grains is larger than a content of the silicon in terms of its oxide in a grain boundary between the aluminum oxide crystal grains and the titanium oxide crystal grains.