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US 12,025,912 B2Granted
Phase shift mask for EUV lithography and manufacturing method for the phase shift mask
AssigneeSK hynix Inc.
InventorTae Joong Ha
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Abstract
There is provided a phase shift mask for extreme-ultraviolet lithography and a method of manufacturing the phase shift mask. The phase shift mask includes a substrate, a reflective layer, device patterns, a frame pattern, or phase shift patterns. The frame pattern is a pattern that includes alignment holes exposing portions of the reflective layer. The phase shift patterns overlap with the device patterns.
Claims14
A phase shift mask comprising;
- a reflective layer formed on a substrate;
- device patterns formed on the reflective layer;
- a frame pattern formed on the reflective layer, the frame pattern including alignment holes exposing portions of the reflective layer;
- and
- phase shift patterns overlapping with the device patterns,
- wherein the frame pattern and the device patterns include substantially the same material layer, and
- wherein regions of the frame pattern adjacent to the alignment holes are exposed without overlapping with any of the phase shift patterns.
4 more elements
Dependencies are inferred from the claim text.