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US 12,022,661 B2Granted
Two-terminal memory device, a method for manufacturing the same, and a semiconductor device including a two-terminal memory device
AssigneesHyundai Motor Company, Kia Corporation
InventorsUi-Yeon Won, Jong-Seok Lee, Sang-Hyeok Yang
Life of this patent
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Abstract
A two-terminal memory device including: a substrate; a source and a drain formed to face each other on an upper surface of the substrate; a ferroelectric layer connected to the source and the drain and formed between the source and the drain; and an extended drain extending from the drain and laminated on the ferroelectric layer. The two-terminal memory device may be applied as a cross-point type and neuromorphic device capable of implementing multi-resistance levels with multi-layer switchable resistance layers.
Claims9
A two-terminal memory device comprising:
- a substrate;
- a source and a drain formed to face each other on an upper surface of the substrate;
- a ferroelectric layer connected to the source and the drain, and formed between the source and the drain;
- and
- an extended drain extending from the drain and laminated on an upper surface of the ferroelectric layer.
2 more elements
Dependencies are inferred from the claim text.