Semiconductor arrangement with an integrated temperature sensor
AssigneeInfineon Technologies AG
InventorsAdrian Finney, Norbert Krischke, Mathias Racki
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AssigneeInfineon Technologies AG
InventorsAdrian Finney, Norbert Krischke, Mathias Racki
Estimating the term…
A semiconductor arrangement is disclosed. The semiconductor arrangement includes: a semiconductor body and a temperature sensor (TES) integrated in the semiconductor body. The TES includes: a first semiconductor region of a first doping type arranged, in a vertical direction of the semiconductor body, between a second semiconductor region of a second doping type and a third semiconductor of the second doping type, and a contact plug ohmically connecting the first semiconductor region and the second semiconductor region. The first semiconductor region includes a base region section spaced apart from the contact plug in a first lateral direction of the semiconductor body and a resistor section arranged between the base region section and the contact plug. The resistor section is implemented such that an ohmic resistance of the resistor section between the base region section and the first semiconductor region is at least 1 MΩ.
A semiconductor arrangement, comprising:
A method for forming a temperature sensor in a semiconductor body, the method comprising:
A method for measuring a temperature in a semiconductor body using a temperature sensor that includes a temperature sensor integrated in a semiconductor body, the temperature sensor comprising a first semiconductor region of a first doping type arranged, in a vertical direction of the semiconductor body, between a second semiconductor region of a second doping type and a third semiconductor region of the second doping type, and a contact plug ohmically connecting the first semiconductor region and the second semiconductor region, wherein the first semiconductor region comprises a base region section spaced apart from the contact plug in a first lateral direction of the semiconductor body and a resistor section arranged between the base region section and the contact plug, and wherein the resistor section is implemented such that an ohmic resistance of the resistor section between the base region section and the contact plug is at least 1 MΩ, the method comprising:
Dependencies are inferred from the claim text.