Supporting substrates for cutting elements, and related methods

A method of forming a supporting substrate for a cutting element, comprising:

• forming a precursor composition comprising:
• discrete WC particles;
• a binding agent;
• and
• discrete particles comprising:
• at least one element selected from Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U;
• at least one additional element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P;
• and
• at least one further element selected from C and W;
• and
• subjecting the precursor composition to a consolidation process to form a homogenized binder between the discrete WC particles, the WC particles dispersed in the homogenized binder, the homogenized binder comprising a substantially homogeneous peritectic alloy comprising C, W, the at least one element, and the at least one additional element.

A method of forming a supporting substrate for a cutting element, comprising:

• forming a precursor composition comprising:
• discrete WC particles;
• a binding agent;
• and
• discrete alloy particles individually having a liquidus temperature greater than or equal to about 525° C., the discrete alloy particles individually comprising:
• at least one first element selected from Sc, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, Cd, Hf, Ta, Re, Os, Ir, Pt, Au, Hg, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Ac, Th, Pa, and U;
• and
• at least one second element selected from Al, Ga, Sn, Be, Bi, Te, Sb, Se, As, Ge, Si, B, and P;
• and
• subjecting the precursor composition to a consolidation process to form a homogenized binder comprising a substantially homogenized peritectic alloy binding the discrete WC particles, the WC particles dispersed in the homogenized binder, the homogenized peritectic alloy comprising C, W, the at least one first element, and the at least one second element.