# US 12,016,241 B2 · Quantum dot device, method of manufacturing the same, and electronic device

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- Number: US 12,016,241 B2
- Document ID: US12016241B2
- Status: Granted
- Kind: B2
- Application number: 17/171,008
- Filed: 2021-02-09
- Published: 2021-08-19
- Granted: 2024-06-18
- Earliest claimed: 2020-02-13
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Won Sik Yoon; Moon Gyu Han; Kwanghee Kim; Heejae Lee; Eun Joo Jang; Tae Hyung Kim; Hyo Sook Jang
- Web page: https://patentgrep.com/patent/US12016241B2

## CPC

- C09K 11/883: {with zinc or cadmium}
- C09K 11/70: containing phosphorus
- H10K 50/16: Electron transporting layers
- H10K 50/17: Carrier injection layers
- H10K 50/171: {Electron injection layers}
- H10K 85/00: Organic materials used in the body or electrodes of devices covered by this subclass
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10K 50/11: characterised by the electroluminescent [EL] layers
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/167: {between the light-emitting layer and the anode}
- H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K 2101/40: Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
- H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A quantum dot device including a first electrode and a second electrode each having a surface opposite the other, a quantum dot layer disposed between the first electrode and the second electrode, an electron transport layer disposed between the quantum dot layer and the second electrode and including first inorganic nanoparticles and a first organic material, and an electron injection layer disposed between the electron transport layer and the second electrode and including second inorganic nanoparticles and a second organic material, wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer. An electronic device including the quantum dot device.

## Claims

### Claim 1

A quantum dot device, comprising
a first electrode and a second electrode each having a surface opposite the other,
a quantum dot layer between the first electrode and the second electrode,
an electron transport layer between the quantum dot layer and the second electrode, the electron transport layer comprising first inorganic nanoparticles and a first organic material disposed on a surface of or between adjacent first inorganic nanoparticles,
wherein the first inorganic nanoparticles are metal oxide nanoparticles represented by Zn1-xQxO, wherein Q is at least one metal excluding Zn, and 0≤x≤0.5, and
an electron injection layer between the electron transport layer and the second electrode, the electron injection layer comprising second inorganic nanoparticles and a second organic material disposed on a surface of or between adjacent second inorganic nanoparticles,
wherein the second inorganic nanoparticles are different from the first inorganic nanoparticles,
wherein a ratio by weight of an amount of the second organic material to a total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is less than a ratio by weight of an amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer.

### Claim 2 (depends on 1)

The quantum dot device of claim 1, wherein the ratio by weight of the amount of the second organic material to the total amount of the second inorganic nanoparticles and the second organic material in the electron injection layer is about 0.01 times to about 0.8 times of the ratio by weight of the amount of the first organic material to a total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer.

### Claim 3 (depends on 1)

The quantum dot device of claim 1, wherein an amount of the second organic material in the electron injection layer is about 1 weight percent to about 25 weight percent, based on a total amount of the second inorganic nanoparticles and the second organic material.

### Claim 4 (depends on 1)

The quantum dot device of claim 1, wherein a LUMO energy level of the electron injection layer is shallower than a work function of the second electrode and deeper than a LUMO energy level of the electron transport layer.

### Claim 5 (depends on 1)

The quantum dot device of claim 1, wherein the first inorganic nanoparticles are metal oxide nanoparticles represented by Zn1-xQxO, wherein Q is at least one metal excluding Zn, and 0≤x<0.5, and the first organic material is present in an amount of about 20 wt % to about 70 wt % based on the total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer.

### Claim 6 (depends on 5)

The quantum dot device of claim 5, wherein the at least one metal Q is Mg, Co, Ni, Ga, Al, Ca, Zr, W, Li, Ti, Ta, Sn, Hf, Si, Ba, or a combination thereof.

### Claim 7 (depends on 1)

The quantum dot device of claim 1, wherein the second inorganic nanoparticles are metal oxide nanoparticles that are dispersible in water, alcohol, or a combination thereof.

### Claim 8 (depends on 1)

The quantum dot device of claim 1, wherein the second inorganic nanoparticles are metal oxide nanoparticles comprising at least one metal selected from the group consisting of Ti, Ce, Sn, Mg, Zr, W, and Al.

### Claim 9 (depends on 1)

The quantum dot device of claim 1, wherein
the second inorganic nanoparticles comprising at least one metal selected from the group consisting of Ti, Ce, Sn, Mg, Zr, W, and Al.

### Claim 10 (depends on 1)

The quantum dot device of claim 1, wherein a thickness of the electron injection layer is less than a thickness of the electron transport layer.

### Claim 11 (depends on 1)

The quantum dot device of claim 1, wherein a thickness of the electron injection layer is less than or equal to about 10 nanometers.

### Claim 12 (depends on 1)

The quantum dot device of claim 1, wherein the electron injection layer is in contact with the second electrode.

### Claim 13

A quantum dot device, comprising
a first electrode and a second electrode each having a surface opposite the other,
a quantum dot layer between the first electrode and the second electrode,
an electron injection layer between the second electrode and the quantum dot layer, the electron injection layer comprising inorganic nanoparticles and an organic material disposed on a surface of or between adjacent inorganic nanoparticles, and
an electron transport layer between the quantum dot layer and the electron injection layer, the electron transport layer comprises an organic material and metal oxide nanoparticles represented by Zn1-xQxO, wherein Q is at least one metal excluding Zn, and 0≤x<0.5,
wherein the inorganic nanoparticles of the electron injection layer are different from the metal oxide nanoparticles of the electron layer,
wherein an amount of the organic material in the electron injection layer is from about 1 weight percent to about 25 weight percent, based on a total amount of the inorganic nanoparticles and the organic material, and
wherein the amount of the organic material in the electron transport layer is present in about 30 wt % to about 70 wt %, based on the total amount of the metal oxide nanoparticles and the organic material in the electron transport layer.

### Claim 14 (depends on 12)

The quantum dot device of claim 12, wherein the second inorganic nanoparticles in the electron injection layer are metal oxide nanoparticles comprising at least one metal selected from the group consisting of Ti Ce, Sn, Mg, Zr, W, and Al.

### Claim 15 (depends on 13)

The quantum dot device of claim 13, wherein the inorganic nanoparticles in the electron injection layer are metal oxide nanoparticles comprising at least one metal selected from the group consisting of Ti Ce, Sn, Mg, Zr W, and Al.

### Claim 16 (depends on 13)

The quantum dot device of claim 13, wherein a thickness of the electron injection layer is less than or equal to about 10 nm.

### Claim 17 (depends on 13)

The quantum dot device of claim 13, wherein the electron injection layer is in contact with the second electrode.

### Claim 18

A method of manufacturing a quantum dot device, comprising forming a first electrode,
forming a quantum dot layer on the first electrode,
forming an electron transport layer on the quantum dot layer, the electron transport layer comprising first inorganic nanoparticles, wherein the first inorganic nanoparticles are metal oxide nanoparticles represented by Zn1-xQxO, wherein Q is at least one metal excluding Zn, and 0≤x<0.5,
forming an electron injection layer on the electron transport layer, the electron injection layer comprising second inorganic nanoparticles, wherein the second inorganic nanoparticles are different from the first inorganic nanoparticles, and
forming a second electrode on the electron injection layer,
wherein the forming of the electron injection layer comprises
preparing a first dispersion comprising the second inorganic nanoparticles and an amount of an organic material,
removing at least a portion of the organic material from the first dispersion to prepare a second dispersion including the second inorganic nanoparticles and a remaining portion of the organic material disposed on a surface of or between adjacent second inorganic nanoparticles, wherein an amount of the organic material in the second dispersion is less than the amount of the organic material in the first dispersion, and
coating the second dispersion on the electron transport layer.

### Claim 19 (depends on 18)

The method of claim 18, further comprising providing a polar dispersion medium to the second dispersion before the coating of the second dispersion, the polar dispersion medium being water, at least one alcohol, or a combination thereof.

### Claim 20 (depends on 18)

The method of claim 18, wherein the amount of the organic material (excluding the dispersion medium) in the second dispersion is from about 1 weight percent to about 22 weight percent, based on a total amount of the second inorganic nanoparticles and the organic material.

### Claim 21 (depends on 1)

An electronic device comprising the quantum dot device of claim 1.

### Claim 22 (depends on 13)

An electronic device comprising the quantum dot device of claim 13.

### Claim 23 (depends on 1)

The quantum dot device of claim 1, wherein an amount of the second organic material in the electron injection layer is about 1 weight percent to 20 weight percent, based on a total amount of the second inorganic nanoparticles and the second organic material, and
an amount of the first organic material in the electron transport layer is present in about 30 wt % to about 70 wt %, based on the total amount of the first inorganic nanoparticles and the first organic material in the electron transport layer.