# US 12,016,211 B2 · Display device

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- Number: US 12,016,211 B2
- Document ID: US12016211B2
- Status: Granted
- Kind: B2
- Application number: 18/161,844
- Filed: 2023-01-30
- Published: 2023-06-08
- Granted: 2024-06-18
- Earliest claimed: 2020-07-16
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: Yeon Hong Kim; Eun Hye Ko; Eun Hyun Kim; Kyoung Won Lee; Sun Hee Lee; Jun Hyung Lim
- Web page: https://patentgrep.com/patent/US12016211B2

## CPC

- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10K 59/1315: {comprising structures specially adapted for lowering the resistance}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1201: {Manufacture or treatment}
- H10K 59/1213: {the pixel elements being TFTs}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A display device includes a substrate, a corrosion prevention layer on the substrate and including an inorganic material, a first conductive layer on the corrosion prevention layer and including aluminum or an aluminum alloy, a first insulating film on the first conductive layer, a semiconductor layer on the first insulating film and including a channel region of a transistor, a second insulating film on the semiconductor layer, and a second conductive layer on the second insulating film and including a barrier layer, which includes titanium, and a main conductive layer, which includes aluminum or an aluminum alloy, wherein the semiconductor layer includes an oxide semiconductor, and the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor.

## Claims

### Claim 1

A display device comprising:
a substrate;
a corrosion prevention layer on the substrate and comprising silicon nitride;
a first conductive layer on the corrosion prevention layer and comprising aluminum or an aluminum alloy;
a first insulating film comprising silicon oxide and silicon nitride on the first conductive layer;
a semiconductor layer on the first insulating film and comprising a channel region of a transistor;
a second insulating film comprising silicon oxide on the semiconductor layer;
a second conductive layer on the second insulating film and comprising a barrier layer, which comprises titanium, and a main conductive layer, which comprises aluminum or an aluminum alloy;
a capping layer on the main conductive layer and comprising at least one of titanium or a titanium compound;
a third insulating film on the second conductive layer; and
a third conductive layer on the third insulating film,
wherein the semiconductor layer comprises an oxide semiconductor,
wherein the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor,
wherein the third conductive layer comprises a source electrode and a drain electrode of the transistor,
wherein the second conductive layer comprises a gate electrode of the transistor,
wherein a thickness of the corrosion prevention layer is in a range of 1000 Å to 2000 Å, and
wherein a thickness of the main conductive layer is in a range of 2500 Å to 4000 Å.

### Claim 2 (depends on 1)

The display device of claim 1, wherein the source electrode of the transistor is electrically connected to both the semiconductor layer and the first conductive layer.

### Claim 3 (depends on 2)

The display device of claim 2, wherein the third conductive layer further comprises a first power supply voltage line.

### Claim 4 (depends on 1)

The display device of claim 1, wherein the second conductive layer is electrically connected to the first conductive layer through a contact hole that exposes the first conductive layer, and
wherein the second conductive layer is in direct contact with the first conductive layer.

### Claim 5 (depends on 1)

The display device of claim 1, wherein the first conductive layer further comprises a metal pattern comprising titanium as a top layer of the first conductive layer.

### Claim 6 (depends on 1)

The display device of claim 1, wherein the barrier layer has the same shape as the main conductive layer in a plan view.

### Claim 7 (depends on 6)

The display device of claim 6, wherein the barrier layer has the same shape as the second insulating film in the plan view.

### Claim 8 (depends on 7)

The display device of claim 7, wherein side surfaces of the barrier layer, side surfaces of the main conductive layer, and side surfaces of the second insulating film are aligned.

### Claim 9 (depends on 1)

The display device of claim 1, wherein a thickness of the barrier layer is in a range of 100 Å to 300 Å.

### Claim 10

A display device comprising:
a substrate;
a semiconductor layer on the substrate and comprising a channel region of a transistor;
a first insulating film on the semiconductor layer;
a first conductive layer on the first insulating film and comprising a barrier layer, which comprises titanium, a main conductive layer, which comprises aluminum or an aluminum alloy, and a capping layer, which comprises titanium;
a second insulating film on the first conductive layer; and
a second conductive layer on the second insulating film and comprising a source electrode and a drain electrode of the transistor,
wherein:
the semiconductor layer comprises an oxide semiconductor,
the first conductive layer comprises a gate electrode of the transistor,
the barrier layer is between the semiconductor layer and the main conductive layer and overlaps the channel region of the transistor, and
wherein a thickness of the main conductive layer is in a range of 2500 Å to 4000 Å.

### Claim 11 (depends on 10)

The display device of claim 10, further comprising:
an inorganic material film comprising silicon nitride on the substrate;
a third conductive layer on the an inorganic material film and comprising aluminum or an aluminum alloy; and
a third insulating film on the third conductive layer,
wherein the inorganic material film, the third conductive layer, and the third insulating film are between the substrate and the semiconductor layer,
wherein a thickness of the inorganic material film is in a range of 1000 Å to 2000 Å, and
wherein a thickness of the barrier layer is in a range of 100 Å to 300 Å.

### Claim 12 (depends on 11)

The display device of claim 11, wherein the third conductive layer comprises a lower conductive pattern, which overlaps the channel region of the transistor.

### Claim 13 (depends on 12)

The display device of claim 12, wherein the lower conductive pattern is electrically connected to the gate electrode of the transistor.

### Claim 14 (depends on 13)

The display device of claim 13, wherein the barrier layer has the same shape as the main conductive layer in a plan view.

### Claim 15 (depends on 14)

The display device of claim 14, wherein the barrier layer has the same shape as the first insulating film in the plan view.

### Claim 16 (depends on 15)

The display device of claim 15, wherein side surfaces of the barrier layer, side surfaces of the main conductive layer, and side surfaces of the first insulating film are aligned.