# US 12,016,182 B2 · Semiconductor device and method of manufacturing the same

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- Number: US 12,016,182 B2
- Document ID: US12016182B2
- Status: Granted
- Kind: B2
- Application number: 17/975,830
- Filed: 2022-10-28
- Published: 2023-02-16
- Granted: 2024-06-18
- Earliest claimed: 2020-03-18
- Assignees: Kioxia Corporation
- Applicants: Kioxia Corporation
- Inventors: Naomi Fukumaki
- Web page: https://patentgrep.com/patent/US12016182B2

## CPC

- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- H10B 43/20: characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
- H10B 43/30: characterised by the memory core region
- H10P 14/6304: {Formation by oxidation, e.g. oxidation of the substrate}
- H10P 52/403: {of conductive or resistive materials}
- H10P 90/126: {by chemical etching}
- H10W 20/42: Vias, e.g. via plugs
- H10P 14/20: of semiconductor materials
- H10B: ELECTRONIC MEMORY DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

In one embodiment, a method of manufacturing a semiconductor device includes forming a stacked film alternately including a plurality of first insulating layers and a plurality of second insulating layers, and forming a hole in the stacked film. The method further includes forming a first film, a first insulator, a charge storage layer, a second insulator and a first semiconductor layer in order in the hole, and forming a plurality of concave portions by removing the plurality of first insulating layers. The method further includes exposing the first insulator from the plurality of concave portions by removing the first film between the plurality of concave portions and the first insulator, and forming a plurality of electrode layers in the plurality of concave portions.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
forming a stacked film alternately including a plurality of first insulating layers and a plurality of second insulating layers;
forming a hole in the stacked film;
forming a first film, a first insulator, a charge storage layer, a second insulator and a first semiconductor layer in order in the hole;
forming a plurality of concave portions by removing the plurality of first insulating layers;
exposing parts of the first insulator in the plurality of concave portions by removing portions of the first film between the plurality of concave portions and the parts of the first insulator; and
forming a plurality of electrode layers in the plurality of concave portions.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first film is created by a second semiconductor layer.

### Claim 3 (depends on 2)

The method of claim 2, further comprising oxidizing surfaces of exposed parts of the second semiconductor layer after removing the portions of the first film.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first semiconductor layer is formed on a third semiconductor layer that is formed below the stacked film, and is electrically connected to the third semiconductor layer.

### Claim 5 (depends on 4)

The method of claim 4, wherein the third semiconductor layer is formed by epitaxial growth.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first film is formed such that a thickness of the first film at a certain height becomes thinner as the height becomes lower.

### Claim 7 (depends on 1)

The method of claim 1, wherein the first film is formed such that a thickness of the first film at a certain height becomes thinner as an inner diameter of the first film at the height becomes smaller.

### Claim 8 (depends on 1)

The method of claim 1, further comprising:
measuring a diameter of the hole after forming the hole; and
adjusting a thickness of the first film in accordance with the measured value of the diameter of the hole.