# US 12,015,248 B2 · Continuous-wave organic thin-film distributed feedback laser and electrically driven organic semiconductor laser diode

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 12,015,248 B2
- Document ID: US12015248B2
- Status: Granted
- Kind: B2
- Application number: 18/316,000
- Filed: 2023-05-11
- Published: 2023-09-07
- Granted: 2024-06-18
- Earliest claimed: 2016-09-02
- Assignees: Kyushu University, National University Corporation; Koala Tech Inc.
- Applicants: Kyushu University, National University Corporation; Koala Tech Inc.
- Inventors: Chihaya Adachi; Sangarange Don Atula Sandanayaka; Toshinori Matsushima; Kou Yoshida; Jean-Charles Ribierre; Fatima Bencheikh; Kenichi Goushi; Takashi Fujihara
- Web page: https://patentgrep.com/patent/US12015248B2

## CPC

- H01S 5/36: comprising organic materials
- H01S 3/1305: {Feedback control systems}
- H01S 5/04253: {having specific optical properties, e.g. transparent electrodes}
- H01S 5/1215: {Multiplicity of periods}
- H01S 5/1231: {Grating growth or overgrowth details}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL

## Abstract

Disclosed are a current excitation type organic semiconductor laser containing a pair of electrodes, an organic laser active layer and an optical resonator structure between the pair of electrodes and a laser having an organic layer on a distributed feedback grating structure. The lasers include a continuous-wave laser, a quasi-continuous-wave laser and an electrically driven semiconductor laser diode.

## Claims

### Claim 1

A method for simulation modeling of an organic laser device having an organic optical gain layer, comprising at least one of (1) to (4) below:
(1) calculating charge carrier mobility and charge carrier recombination rate in the device to perform electrical simulation;
(2) solving Helmholtz equation to determine an optical propagation mode in the device to perform optical simulation;
(3) calculating a temperature distribution in the device caused by heat conduction from a laser beam spot irradiated on the organic optical gain layer to perform temperature simulation and estimate an operation stability; and
(4) calculating a rate equation comprising gain, exciton radiative decay constant kr and exciton non-radiative decay constant knr to estimate laser characteristics.

### Claim 2 (depends on 1)

The method according to claim 1, comprising (3).

### Claim 3 (depends on 2)

The method according to claim 2, further comprising at least one of (1), (2) and (4).

### Claim 4 (depends on 1)

The method according to claim 1, comprising (1), (2), (3) and (4).

### Claim 5 (depends on 1)

The method according to claim 1, wherein the organic laser device is a current excitation type organic semiconductor laser device.

### Claim 6 (depends on 1)

The simulation modeling method according to claim 1, wherein the organic laser device is an optically pumped organic laser device.

### Claim 7 (depends on 1)

A computer-readable recording medium which records a program for making a computer perform the method according to claim 1.

### Claim 8 (depends on 7)

The computer-readable recording medium according to claim 7, which further records a program for making the computer output at least one of a current density-voltage curve, electric field distribution, charge carrier density, exciton density, eigenmodes of an optical cavity structure, Q-factor and confinement factor of the optical cavity structure, and gain.