# US 12,015,242 B2 · Optical module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,242 B2 - Document ID: US12015242B2 - Status: Granted - Kind: B2 - Application number: 17/275,048 - Filed: 2018-11-21 - Published: 2021-08-19 - Granted: 2024-06-18 - Earliest claimed: 2018-11-21 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Tatsuki Otani; Norio Okada - Web page: https://patentgrep.com/patent/US12015242B2 ## CPC - H01S 5/026: Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers (stabilisation of output H01S5/06) - H01S 5/0014: {Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R)} - H01S 5/0231: Stems - H01S 5/02345: Wire-bonding - H01S 5/0239: Combinations of electrical or optical elements - H01S 5/04254: {characterised by the shape} - H01S 5/02469: {Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC} - H01S 5/0265: {Intensity modulators (intra-cavity modulators H01S5/0625)} - H01S 5/06226: {Modulation at ultra-high frequencies} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL ## Abstract The optical module which is disclosed in the present application comprises a plate-like metal stem in which a metallic lead pin is inserted in a through-hole so as to be coaxial with the through-hole and one sheet of a dielectric substrate which is equipped with a high-frequency signal line to be connected to the lead pin and a semiconductor optical integrated element, in which a semiconductor laser and an optical modulator are integrated, and which is connected to the high-frequency signal line with a bonding wire, wherein one side surface of the dielectric substrate extends in a direction perpendicular to the light axis direction of the semiconductor optical integrated element, and the side surface of the dielectric substrate is arranged in contact with a surface of the metal stem. ## Claims ### Claim 1 An optical module comprising a plate-like metal stem in which a metallic lead pin is inserted in a through-hole so as to be coaxial with the through-hole and one sheet of a dielectric substrate which is equipped with a high-frequency signal line to be connected to the lead pin and a semiconductor optical integrated element, in which a semiconductor laser and an optical modulator are integrated, and which is connected to the high-frequency signal line with a bonding wire, wherein one side surface of the dielectric substrate extends in a direction perpendicular to the light axis direction of the semiconductor optical integrated element, and the one side surface of the dielectric substrate is arranged in contact with a surface of the metal stem, on at least one part of the one side surface, an electrode which is common to a cathode electrode of the high-frequency signal line is formed and the electrode and a surface of the metal stem are electrically connected, and the dielectric substrate, which includes the semiconductor laser, the optical modulator, and the signal line to be connected to the lead pin, is a single integrated piece. ### Claim 2 (depends on 1) The optical module according to claim 1, wherein a substrate supporting member which has a perpendicular surface which is perpendicular to a surface of the metal stem and which does not have a temperature control member is provided on a surface of the metal stem and back surface of the dielectric substrate is arranged along the perpendicular surface of the substrate supporting member. ### Claim 3 (depends on 1) The optical module according to claim 1, wherein the semiconductor optical integrated element is arranged in a groove which is provided on a surface of the dielectric substrate. ### Claim 4 (depends on 2) The optical module according to claim 2, wherein the semiconductor optical integrated element is arranged in a groove which is provided on a surface of the dielectric substrate. ### Claim 5 (depends on 2) The optical module according to claim 2, wherein the semiconductor optical integrated element has a back surface of optical output which is at a side of the metal stem, and an optical detector which detects light which leaks to the back surface of the semiconductor optical integrated element is provided on a surface of the metal stem. ### Claim 6 (depends on 3) The optical module according to claim 3, wherein the semiconductor optical integrated element has a back surface of optical output which is at a side of the metal stem, and an optical detector which detects light which leaks to the back surface of the semiconductor optical integrated element is provided on a surface of the metal stem. ### Claim 7 (depends on 2) The optical module according to claim 2, wherein the semiconductor optical integrated element has a back surface of optical output which is at a side of the metal stem, and an optical detector which detects light which leaks to the back surface of the semiconductor optical integrated element is provided on the dielectric substrate. ### Claim 8 (depends on 3) The optical module according to claim 3, wherein the semiconductor optical integrated element has a back surface of optical output which is at a side of the metal stem, and an optical detector which detects light which leaks to the back surface of the semiconductor optical integrated element is provided on the dielectric substrate. ### Claim 9 An optical module comprising a plate-like metal stem in which a metallic lead pin is inserted in a through-hole so as to be coaxial with the through-hole and one sheet of a dielectric substrate which is equipped with a high-frequency signal line to be connected to the lead pin and a semiconductor optical integrated element, in which a semiconductor laser and an optical modulator are integrated, and which is connected to the high-frequency signal line with a bonding wire, wherein one side surface of the dielectric substrate extends in a direction perpendicular to the light axis direction of the semiconductor optical integrated element, and the one side surface of the dielectric substrate is arranged in contact with a surface of the metal stem, on at least one part of the one side surface, an electrode which is common to a cathode electrode of the high-frequency signal line is formed and the electrode and a surface of the metal stem are electrically connected, and the semiconductor optical integrated element has a back surface of optical output which is at a side of the metal stem, and an optical detector which detects light which leaks to the back surface of the semiconductor optical integrated element is provided on a surface of the metal stem. ### Claim 10 An optical module comprising a plate-like metal stem in which a metallic lead pin is inserted in a through-hole so as to be coaxial with the through-hole and one sheet of a dielectric substrate which is equipped with a high-frequency signal line to be connected to the lead pin and a semiconductor optical integrated element, in which a semiconductor laser and an optical modulator are integrated, and which is connected to the high-frequency signal line with a bonding wire, wherein one side surface of the dielectric substrate extends in a direction perpendicular to the light axis direction of the semiconductor optical integrated element, and the one side surface of the dielectric substrate is arranged in contact with a surface of the metal stem, on at least one part of the one side surface, an electrode which is common to a cathode electrode of the high-frequency signal line is formed and the electrode and a surface of the metal stem are electrically connected, and the semiconductor optical integrated element has a back surface of optical output which is at a side of the metal stem, and an optical detector which detects light which leaks to the back surface of the semiconductor optical integrated element is provided on the dielectric substrate.