# US 12,015,212 B2 · Radio-frequency module and communication apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,212 B2 - Document ID: US12015212B2 - Status: Granted - Kind: B2 - Application number: 18/149,748 - Filed: 2023-01-04 - Published: 2023-05-11 - Granted: 2024-06-18 - Earliest claimed: 2020-09-30 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Koji Furutani - Web page: https://patentgrep.com/patent/US12015212B2 ## CPC - H01Q 5/335: at the feed, e.g. for impedance matching - H01Q 1/2283: {mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package} - H01Q 1/38: formed by a conductive layer on an insulating support {(patch antennas H01Q9/0407; microstrip dipole antennas H01Q9/065; microstrip slot antennas H01Q13/106; transmission line microstrip antennas H01Q13/206; manufacturing reflecting surfaces using insulating material for supporting the reflecting surface H01Q15/142)} - H01Q 1/422: {comprising two or more layers of dielectric material (H01Q1/425 takes precedence)} - H04B 1/38: Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving - H10W 70/60: Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) - H10W 90/00: Package configurations - H10W 70/655: Fan-out layouts - H10W 90/724: {between a chip and a stacked insulating package substrate, interposer or RDL} - H01Q: ANTENNAS, i.e. RADIO AERIALS (radiators or antennas for microwave heating H05B6/72) - H04B: TRANSMISSION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A radio-frequency module includes a multilayer substrate, a first semiconductor device, and a second semiconductor device. The multilayer substrate includes a plurality of stacked layers, and has a first major face and a second major face. The first semiconductor device includes a first power amplifier circuit. The second semiconductor device includes at least one of a low-noise amplifier circuit, a switching circuit, or a control circuit. The first major face includes a first recess. The first semiconductor device is mounted over a bottom face of the first recess. The second semiconductor device is mounted over the first major face so as to overlie the first recess. The first semiconductor device is connected with a metallic via that extends through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. ## Claims ### Claim 1 A radio-frequency module comprising: a multilayer substrate including a plurality of stacked layers, the multilayer substrate having a first major face and a second major face; a first semiconductor device including a first power amplifier circuit; and a second semiconductor device including at least one of a low-noise amplifier circuit, a switching circuit, or a control circuit, wherein the first major face includes a first recess, wherein the first semiconductor device is mounted over a bottom face of the first recess, wherein the second semiconductor device is mounted over the first major face so as to overlie the first recess, and wherein the first semiconductor device is connected with a metallic via, the metallic via extending through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. ### Claim 2 A radio-frequency module comprising: a multilayer substrate including a plurality of stacked layers, the multilayer substrate having a first major face and a second major face; a first semiconductor device including a compound semiconductor substrate; and a second semiconductor device including a silicon semiconductor substrate, wherein the first major face includes a first recess, wherein the first semiconductor device is mounted over a bottom face of the first recess, wherein the second semiconductor device is mounted over the first major face so as to overlie the first recess, and wherein the first semiconductor device is connected with a metallic via, the metallic via extending through a portion of the multilayer substrate from the bottom face of the first recess to the second major face. ### Claim 3 (depends on 2) The radio-frequency module according to claim 2, wherein the second semiconductor device includes at least one of a low-noise amplifier circuit, a switching circuit, or a control circuit. ### Claim 4 (depends on 2) The radio-frequency module according to claim 2, wherein the first semiconductor device includes a first power amplifier circuit. ### Claim 5 (depends on 1) The radio-frequency module according to claim 1, wherein the multilayer substrate includes an electric conductor, the electric conductor being disposed at least inside the multilayer substrate and electrically connecting the first semiconductor device and the second semiconductor device with each other. ### Claim 6 (depends on 5) The radio-frequency module according to claim 5, wherein the first semiconductor device further includes a temperature sensor configured to detect a temperature of the first power amplifier circuit, and wherein the second semiconductor device includes a bias adjustment circuit, based on the temperature detected by the temperature sensor, configured to adjust a bias to be supplied to the first power amplifier circuit. ### Claim 7 (depends on 5) The radio-frequency module according to claim 5, wherein the first semiconductor device further includes a detector circuit configured to detect a characteristic parameter of the first power amplifier circuit, and wherein the second semiconductor device includes a characteristic adjustment circuit, based on the characteristic parameter detected by the detector circuit, configured to adjust the characteristic parameter. ### Claim 8 (depends on 7) The radio-frequency module according to claim 7, wherein the characteristic parameter includes at least one of impedance, phase, or power of the first power amplifier circuit. ### Claim 9 (depends on 4) The radio-frequency module according to claim 4, wherein the second semiconductor device further includes a second power amplifier circuit in cascading connection with the first power amplifier circuit. ### Claim 10 (depends on 4) The radio-frequency module according to claim 4, wherein the multilayer substrate includes a matching circuit built in the multilayer substrate, the matching circuit being connected with the first power amplifier circuit. ### Claim 11 (depends on 1) The radio-frequency module according to claim 1, further comprising a mount component having a thickness greater than a thickness of the second semiconductor device, the mount component being a component to be mounted, wherein the first major face includes a second recess, and wherein the mount component is mounted onto a bottom face of the second recess. ### Claim 12 (depends on 11) The radio-frequency module according to claim 11, wherein the second recess has a depth less than a depth of the first recess. ### Claim 13 (depends on 1) A communication apparatus comprising: a radio-frequency integrated circuit configured to process a radio-frequency signal transmitted and received by an antenna; and the radio-frequency module according to claim 1 configured to propagate the radio-frequency signal between the antenna and the radio-frequency integrated circuit. ### Claim 14 (depends on 3) The radio-frequency module according to claim 3, wherein the first semiconductor device includes a first power amplifier circuit. ### Claim 15 (depends on 2) The radio-frequency module according to claim 2, wherein the multilayer substrate includes an electric conductor, the electric conductor being disposed at least inside the multilayer substrate and electrically connecting the first semiconductor device and the second semiconductor device with each other. ### Claim 16 (depends on 3) The radio-frequency module according to claim 3, wherein the multilayer substrate includes an electric conductor, the electric conductor being disposed at least inside the multilayer substrate and electrically connecting the first semiconductor device and the second semiconductor device with each other. ### Claim 17 (depends on 4) The radio-frequency module according to claim 4, wherein the multilayer substrate includes an electric conductor, the electric conductor being disposed at least inside the multilayer substrate and electrically connecting the first semiconductor device and the second semiconductor device with each other. ### Claim 18 (depends on 6) The radio-frequency module according to claim 6, wherein the first semiconductor device further includes a detector circuit configured to detect a characteristic parameter of the first power amplifier circuit, and wherein the second semiconductor device includes a characteristic adjustment circuit, based on the characteristic parameter detected by the detector circuit, configured to adjust the characteristic parameter. ### Claim 19 (depends on 5) The radio-frequency module according to claim 5, wherein the second semiconductor device further includes a second power amplifier circuit in cascading connection with the first power amplifier circuit. ### Claim 20 (depends on 6) The radio-frequency module according to claim 6, wherein the second semiconductor device further includes a second power amplifier circuit in cascading connection with the first power amplifier circuit.