# US 12,015,108 B2 · Light emitting device and manufacturing method thereof

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- Number: US 12,015,108 B2
- Document ID: US12015108B2
- Status: Granted
- Kind: B2
- Application number: 17/261,035
- Filed: 2019-04-29
- Published: 2021-08-26
- Granted: 2024-06-18
- Earliest claimed: 2018-07-20
- Assignees: Najing Technology Corporation Limited
- Applicants: Najing Technology Corporation Limited
- Inventors: Hailin Wang; Yunjian Lan; Xiangpeng Du
- Web page: https://patentgrep.com/patent/US12015108B2

## CPC

- C09K 11/54: containing zinc or cadmium
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/854: characterised by their material, e.g. epoxy or silicone resins
- H10K 85/10: Organic polymers or oligomers
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10H 20/034: {of coatings}
- H10H 20/0361: {of wavelength conversion means}
- H10H 20/0362: {of encapsulations}
- H10H 20/8511: {characterised by their material, e.g. binder}
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

The disclosure provides a light emitting device and a manufacturing method thereof. The light emitting device includes a substrate, an LED chip, a quantum dot composite layer and a first protective layer; the LED chip is disposed on a surface of the substrate; the quantum dot composite layer is arranged on a surface of the LED chip away from the substrate; the first protective layer is arranged on a surface of the quantum dot composite layer away from the LED chip; wherein the quantum dot composite layer includes a water-soluble polymer matrix and quantum dots dispersed in the water-soluble polymer matrix; the material of the first protective layer is one of a first inorganic oxide and a first water-blocking polymer; and the material of the water-soluble polymer matrix is an oxygen-blocking polymer.

## Claims

### Claim 1

A light emitting device, wherein comprising:
a substrate;
an LED chip disposed on a surface of said substrate;
a quantum dot composite layer arranged on a surface of said LED chip away from said substrate; and
a first protective layer arranged on a surface of said quantum dot composite layer away from said LED chip;
wherein, said quantum dot composite layer comprises a water-soluble polymer matrix and quantum dots dispersed in said water-soluble polymer matrix, and the material of said first protective layer is one of a first inorganic oxide and a first water-blocking polymer, and the material of said water-soluble polymer matrix is an oxygen-blocking polymer; the material of said water-soluble polymer matrix is one or more of polyvinylpyrrolidone, polyacrylamide, polyvinyl alcohol, polyacrylic acid, cellulose and alkyd resin; the material of said quantum dot composite layer comprises a water-soluble polymer matrix and a microstructure dispersed in said water-soluble polymer matrix, and said microstructure comprises a quantum dot and a dispersion medium for dispersing said quantum dot, wherein, the polarity of said water-soluble polymer matrix is opposite to the polarity of said quantum dot, and said polarity of said water-soluble polymer matrix is opposite to the polarity of said dispersion medium;
said quantum dot is an oil-soluble quantum dot, and said dispersion medium is one of a quantum dot solvent and a hydrophobic polymer; said quantum dot solvent is a nonpolar organic solvent; said nonpolar organic solvent has a boiling point of ≥100° C.; said hydrophobic polymer is selected from one or more of compounds represented by the following structures of Formula I, Formula II and Formula III:
said A1 is
said A2 is
said n is 6˜30,
said R1, said R2, said R3 and said R4 are selected independently from any one of methyl, siloxy, phenyl, or combination thereof;
said R5, said R6 and said R7 are selected independently from any one of methyl, phenyl, or combination thereof;
said B1 and said B3 are selected independently from any one of methyl, phenyl, or combination thereof, and said B2 is selected from one of
and said m, said p and said q are independently 2˜10;
said Y is a C3˜C16 branched or straight chain alkane segment;
said L is one of an amino, carboxyl and sulfhydryl group.

### Claim 2 (depends on 1)

The light emitting device according to claim 1, wherein said light emitting device further comprises a second protective layer, and the material of said second protective layer is one of a second inorganic oxide and a second water-blocking polymer; preferably, said first inorganic oxide and said second inorganic oxide are each independently selected from at least one of silicon dioxide and aluminum oxide; preferably, said first water-blocking polymer and said second water-blocking polymer are each independently selected from one or more of polyvinylidene chloride, poly (vinylidene fluoride), polytetrafluoroethylene and polychlorotrifluoroethene.

### Claim 3 (depends on 1)

The light emitting device according to claim 1, wherein the material of said first protective layer is said first inorganic oxide, and said first protective layer is formed by providing one or more solutions of an organic silicate, an organic aluminum silicate and a silazane on said surface of said quantum dot composite layer, and hydrolyzing for solidification.

### Claim 4 (depends on 1)

The light emitting device according to claim 1, wherein said light emitting device further comprises a third protective layer and a fourth protective layer, and said third protective layer and said fourth protective layer are respectively disposed on two opposing surfaces of said quantum dot composite layer, and the material of said third protective layer and said fourth protective layer is an oxygen-blocking polymer.

### Claim 5 (depends on 1)

The light emitting device according to claim 1, wherein said nonpolar organic solvent has a boiling point of ≥100° C.; a carbon polymerization degree of said B2 is ≤10, more preferably 5.

### Claim 6 (depends on 5)

The light emitting device according to claim 5, wherein, when said dispersion medium is said quantum dot solvent, said microstructure further comprises a quantum dot carrier where said quantum dot is loaded, and said quantum dot carrier loaded with said quantum dot is dispersed in said quantum dot solvent;
preferably, said quantum dot carrier is a mesoporous material, and said quantum dot is located in a pore or on a surface of said mesoporous material; more preferably, said mesoporous material is at least one of a silica mesoporous material and an alumina mesoporous material.

### Claim 7 (depends on 6)

The light emitting device according to claim 6, wherein, when said dispersion medium is said quantum dot solvent, said microstructure further comprises a free ligand, and said free ligand is dispersed in said quantum dot solvent;
preferably, said free ligand is one or more of fatty acid, fatty acid salt, fatty amine, organic phosphine and thiol; more preferably, said free ligand is one or more of tri-n-octylphosphine, oleic acid and zinc oleate.

### Claim 8 (depends on 1)

The light emitting device according to claim 1, wherein the material of said water-soluble polymer matrix is polyvinyl alcohol;
preferably, a weight ratio of said quantum dot to said water-soluble polymer matrix is 0.1-30:100; a weight ratio of said quantum dot to said dispersion medium is 1-100:100.

### Claim 9 (depends on 1)

A manufacturing method of the light emitting device according to claim 1, wherein comprising steps of:
providing a substrate;
disposing an LED chip on a surface of said substrate;
arranging a quantum dot composite layer on a surface of said LED chip away from said substrate;
and arranging a first protective layer on a surface of said quantum dot composite layer away from said LED chip to obtain a light emitting device;
wherein, said quantum dot composite layer comprises a water-soluble polymer matrix and quantum dots dispersed in said water-soluble polymer matrix, and the material of said first protective layer is one of a first inorganic oxide and a first water-blocking polymer, and the material of said water-soluble polymer matrix is an oxygen-blocking polymer.

### Claim 10 (depends on 9)

The manufacturing method according to claim 9, wherein before said step of arranging said quantum dot composite layer on said surface of said LED chip, said manufacturing method further comprises a step of disposing a second protective layer on a surface of said quantum dot composite layer, and in said step of arranging said quantum dot composite layer on said surface of said LED chip, disposing said second protective layer close to said LED chip; wherein the material of said second protective layer is one of a second inorganic oxide and a second water-blocking polymer.

### Claim 11 (depends on 9)

The manufacturing method according to claim 9, wherein said material of said first protective layer is said first inorganic oxide,
and said step of arranging said first protective layer comprises: preparing a coating solution of said first protective layer, coating, spraying or pouring said coating solution of said first protective layer onto said surface of said quantum dot composite layer away from said LED chip, and hydrolyzing for solidification to form said first protective layer; wherein, said coating solution of said first protective layer comprises a coating solvent and one or more of an organic silicate, an organic aluminum silicate and a silazane dissolved in said coating solvent.

### Claim 12 (depends on 11)

The manufacturing method according to claim 11, wherein said organic silicate is tetraethyl silicate, said organic aluminum silicate is bis(sec-butyl)triethylaluminum orthosilicate, and said silazane is perhydropolysilazane; preferably, said coating solvent is one or more of tetrahydrofuran, ethyl acetate and acetone.

### Claim 13 (depends on 9)

The manufacturing method according to claim 9, wherein before said step of arranging said quantum dot composite layer on said surface of said LED chip, said manufacturing method further comprises a step of disposing a third protective layer on said surface of said LED chip; before said step of arranging said first protective layer on said surface of said quantum dot composite layer, said manufacturing method further comprises disposing a fourth protective layer on said surface away from said third protective layer of said quantum dot composite layer; the material of said third protective layer and said fourth protective layer is an oxygen-blocking polymer.