# US 12,015,107 B2 · Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,107 B2 - Document ID: US12015107B2 - Status: Granted - Kind: B2 - Application number: 18/180,992 - Filed: 2023-03-09 - Published: 2023-07-13 - Granted: 2024-06-18 - Earliest claimed: 2018-03-15 - Assignees: OSRAM OLED GmbH - Applicants: OSRAM OLED GmbH - Inventors: Sebastian Pickel; Johannes Saric; Wolfgang Schmid; Anna Strozecka-Assig; Johannes Baur - Web page: https://patentgrep.com/patent/US12015107B2 ## CPC - H10H 20/831: characterised by their shape - G02B 1/00: Optical elements characterised by the material of which they are made; Optical coatings for optical elements - G02B 5/08: Mirrors {(vehicle mirrors involving special optical features B60R1/08)} - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H 20/833: Transparent materials - H10H 20/835: {Reflective materials} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10H 20/824: comprising only Group III-V materials, e.g. GaP - H10H 20/856: Reflecting means - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract In one embodiment, the optoelectronic semiconductor chip comprises a semiconductor layer sequence with an active zone for generating a radiation. The semiconductor layer sequence is based on AlInGaP and/or on AlInGaAs. A metal mirror for the radiation is located on a rear side of the semiconductor layer sequence opposite a light extraction side. A protective metallization is applied directly to a side of the metal mirror facing away from the semiconductor layer sequence. An adhesion promoting layer is located directly on a side of the metal mirror facing the semiconductor layer sequence. The adhesion promoting layer is an encapsulation layer for the metal mirror, so that the metal mirror is encapsulated at least at one outer edge by the adhesion promoting layer together with the protective metallization. ## Claims ### Claim 1 An optoelectronic semiconductor chip comprising: a semiconductor layer sequence with an active zone for generating a radiation; a metal mirror for the radiation; a protective metallization directly on a side of the metal mirror facing away from the semiconductor layer sequence; and an adhesion promoting layer directly on a side of the metal mirror facing the semiconductor layer sequence, wherein the adhesion promoting layer is an encapsulation layer for the metal mirror so that the metal mirror is completely encapsulated by the adhesion promoting layer together with the protective metallization. ### Claim 2 (depends on 1) The optoelectronic semiconductor chip according to claim 1, comprising one or more metallic electrical through-connections which extend directly up to a side of the semiconductor layer sequence facing the metal mirror or directly up to a contact layer of a transparent conductive oxide and terminate at a distance from the active zone, wherein the at least one through-connection is formed in a region closest to the semiconductor layer sequence by the protective metallization, wherein the adhesion promoting layer and the protective metallization project laterally beyond the semiconductor layer sequence, and wherein the metal mirror is completely encapsulated at all edges by the adhesion promoting layer together with the protective metallization and, viewed in cross-section, borders exclusively to the protective metallization together with the adhesion promoting layer. ### Claim 3 (depends on 2) The optoelectronic semiconductor chip according to claim 2, further comprising a reflector of at least one material which is transparent for the radiation generated during operation, wherein the reflector is located directly between the semiconductor layer sequence and the adhesion promoting layer. ### Claim 4 (depends on 3) The optoelectronic semiconductor chip according to claim 3, wherein the reflector is electrically insulating and is penetrated by the through-connection, wherein the reflector projects beyond the semiconductor layer sequence and/or the metal mirror when viewed in plan view. ### Claim 5 (depends on 4) The optoelectronic semiconductor chip according to claim 4, wherein the reflector directly adjoins the protective metallization in regions which, seen in plan view, are located next to the semiconductor layer sequence. ### Claim 6 (depends on 1) The optoelectronic semiconductor chip according to claim 1, wherein the metal mirror is a silver mirror, the adhesion promoting layer is made of aluminum oxide, the protective metallization is a layer stack of several metal layers, and a region between the semiconductor layer sequence and the protective metallization is free of cavities. ### Claim 7 (depends on 1) The optoelectronic semiconductor chip according to claim 1, further comprising at least one metallic electrical through-connection, wherein the through-connection extends up to a side of the semiconductor layer sequence facing the metal mirror and terminates at a distance from the active zone. ### Claim 8 (depends on 7) The optoelectronic semiconductor chip according to claim 7, wherein the adhesion promoting layer is removed from a region of the through-connection nearest to the semiconductor layer sequence, wherein the adhesion promoting layer partially or completely covers side flanks of the through-connection. ### Claim 9 (depends on 7) The optoelectronic semiconductor chip according to claim 7, wherein the through-connection is formed in a region closest to the semiconductor layer sequence by the metal mirror. ### Claim 10 (depends on 9) The optoelectronic semiconductor chip according to claim 9, wherein the protective metallization in the through-connection is closer to the semiconductor layer sequence than adjacent regions of the metal mirror. ### Claim 11 (depends on 7) The optoelectronic semiconductor chip according to claim 7, wherein the through-connection (5) is formed in a region closest to the semiconductor layer sequence by the protective metallization. ### Claim 12 (depends on 7) The optoelectronic semiconductor chip according to claim 7, further comprising a contact layer; and wherein in a region of the through-connections the semiconductor layer sequence has a greater thickness in each case, and wherein the contact layer is restricted to the region with the greater thickness. ### Claim 13 (depends on 1) The optoelectronic semiconductor chip according to claim 1, wherein the adhesion promoting layer and the protective metallization project laterally beyond the semiconductor layer sequence. ### Claim 14 (depends on 1) The optoelectronic semiconductor chip according to claim 1, wherein the adhesion promoting layer has a uniform, constant thickness at least over the metal mirror, wherein different regions of the adhesion promoting layer do not overlap each other. ### Claim 15 (depends on 1) The optoelectronic semiconductor chip according to claim 1, wherein the adhesion promoting layer is spaced apart from the semiconductor layer sequence, and wherein on a side facing the semiconductor layer sequence the adhesion promoting layer is exclusively in contact with a reflector. ### Claim 16 (depends on 1) The optoelectronic semiconductor chip according to claim 1, wherein, on a side facing away from the adhesion promoting layer, a reflector is in direct contact with both, the rear side of the semiconductor layer sequence and a contact layer. ### Claim 17 An optoelectronic semiconductor chip comprising: a semiconductor layer sequence with an active zone for generating a radiation; a metal mirror for the radiation; a protective metallization directly on a side of the metal mirror facing away from the semiconductor layer sequence; an adhesion promoting layer directly on a side of the metal mirror facing the semiconductor layer sequence; and a contact layer of a transparent conductive oxide; wherein: the adhesion promoting layer is an encapsulation layer for the metal mirror so that the metal mirror is completely encapsulated an outer edge by the adhesion promoting layer together with the protective metallization; and the contact layer directly adjoins the semiconductor layer sequence and is electrically ohmically connected to the metal mirror. ### Claim 18 (depends on 17) The optoelectronic semiconductor chip according to claim 17, wherein the adhesion promoting layer extends to the contact layer. ### Claim 19 An optoelectronic semiconductor chip comprising: a semiconductor layer sequence with an active zone for generating a radiation; a metal mirror for the radiation; a protective metallization directly on a side of the metal mirror facing away from the semiconductor layer sequence; an adhesion promoting layer directly on a side of the metal mirror facing the semiconductor layer sequence; and a cover layer; and wherein: the adhesion promoting layer is an encapsulation layer for the metal mirror so that the metal mirror is completely encapsulated by the adhesion promoting layer together with the protective metallization; and wherein the cover layer extends from a light extraction side over side flanks of the semiconductor layer sequence up to the adhesion promoting layer, so that the semiconductor layer sequence is enclosed by the cover layer together with the adhesion promoting layer and the protective metallization in at least one cross-sectional view and wherein the cover layer and the adhesion promoting layer are made of the same material. ### Claim 20 (depends on 19) The optoelectronic semiconductor chip according to claim 19, in which the cover layer is covered with a moisture protection layer.