# US 12,015,106 B2 · Display device using semiconductor light emitting device surrounded by conductive electrode and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,106 B2 - Document ID: US12015106B2 - Status: Granted - Kind: B2 - Application number: 17/834,452 - Filed: 2022-06-07 - Published: 2022-09-22 - Granted: 2024-06-18 - Earliest claimed: 2018-10-25 - Assignees: LG Electronics Inc. - Applicants: LG Electronics Inc. - Inventors: Junghoon Kim; Byoungkwon Cho - Web page: https://patentgrep.com/patent/US12015106B2 ## CPC - H10H 20/831: characterised by their shape - H10W 70/099: {Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers} - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/821: of the light-emitting regions, e.g. non-planar junctions - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10W 90/00: Package configurations - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10H 20/0364: {of interconnections} - H10W 72/0198: {batch processes} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A display device includes a semiconductor light emitting device disposed on a substrate and having a first conductive electrode disposed on a first upper portion of the semiconductor light emitting device and a second conductive electrode disposed on a second upper portion of the semiconductor light emitting device, a passivation layer disposed on the semiconductor light emitting device, a first electrode electrically connected to the first conductive electrode, and a second electrode electrically connected to the second conductive electrode. A part of the second electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween. ## Claims ### Claim 1 A display device, comprising: a semiconductor light emitting device disposed on a substrate, and having a first conductive electrode disposed on a first upper portion of the semiconductor light emitting device, and a second conductive electrode disposed on a second upper portion of the semiconductor light emitting device; a passivation layer disposed on the semiconductor light emitting device; a first electrode electrically connected to the first conductive electrode; and a second electrode electrically connected to the second conductive electrode, wherein a part of the second electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween, and wherein a bottom surface of the first conductive electrode is disposed at a position higher than a top surface of the second conductive electrode in a thickness direction of the semiconductor light emitting device. ### Claim 2 (depends on 1) The display device of claim 1, wherein the first second conductive electrode is surrounded by the first conductive electrode. ### Claim 3 (depends on 1) The display device of claim 1, wherein the first conductive electrode is disposed on an upper edge of the semiconductor light emitting device, and the second conductive electrode is disposed on an upper central portion of the semiconductor light emitting device. ### Claim 4 (depends on 1) The display device of claim 1, wherein the passivation layer is extended from a side surface of the semiconductor light emitting device in a width direction of the semiconductor light emitting device, and disposed to cover portions of the first and second conductive electrodes. ### Claim 5 (depends on 1) The display device of claim 1, wherein the second conductive electrode is disposed in a recessed portion of the semiconductor light emitting device. ### Claim 6 (depends on 1) The display device of claim 1, wherein the semiconductor light emitting device comprises: a first conductivity type semiconductor layer disposed below the first conductive electrode; a second conductivity type semiconductor layer disposed below the second conductive type electrode; and an active layer disposed between the first and second conductivity type semiconductor layers. ### Claim 7 (depends on 6) The display device of claim 6, wherein a height of the first conductivity type semiconductor layer is greater than a height of the second conductive electrode. ### Claim 8 (depends on 6) The display device of claim 6, wherein a height of the second conductive electrode is greater than a height of the active layer. ### Claim 9 (depends on 6) The display device of claim 6, wherein the top surface of the second conductive electrode is disposed at the position lower than a top surface of the first conductivity type semiconductor layer in the thickness direction of the semiconductor light emitting device. ### Claim 10 (depends on 1) The display device of claim 1, where the first electrode and the second electrode are disposed perpendicularly to each other. ### Claim 11 (depends on 1) The display device of claim 1, wherein a shape of the first conductive electrode is different from a shape of the second conductive electrode. ### Claim 12 (depends on 1) The display device of claim 1, wherein a thickness of the passivation layer is different from thicknesses of the first and second electrodes. ### Claim 13 A display device, comprising: a semiconductor light emitting device disposed, and including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, an active layer disposed between the first and second conductivity type semiconductor layers, a first conductive electrode electrically connected to the first conductivity type semiconductor layer, and a second conductive electrode connected to the second conductive semiconductor layer; a first electrode electrically connected to the first conductive electrode; a second electrode electrically connected to the second conductive electrode; and a passivation layer disposed on the semiconductor light emitting device, wherein a part of the second electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween, and wherein a bottom surface of the first conductive electrode is disposed at a position higher than a top surface of the second conductive electrode in a thickness direction of the semiconductor light emitting device. ### Claim 14 (depends on 13) The display device of claim 13, wherein the second conductive electrode is surrounded by the first conductive electrode. ### Claim 15 (depends on 13) The display device of claim 13, wherein the second conductive electrode is disposed in a recessed portion of the semiconductor light emitting device. ### Claim 16 (depends on 13) The display device of claim 13, wherein the top surface of the second conductive electrode is disposed at the position lower than a top surface of the first conductivity type semiconductor layer in the thickness direction of the semiconductor light emitting device.