# US 12,015,105 B2 · Capacitive control of electrostatic field effect optoelectronic device

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- Number: US 12,015,105 B2
- Document ID: US12015105B2
- Status: Granted
- Kind: B2
- Application number: 17/150,772
- Filed: 2021-01-15
- Published: 2021-07-22
- Granted: 2024-06-18
- Earliest claimed: 2020-01-16
- Assignees: Rochester Institute of Technology
- Applicants: Matthew Hartensveld; Jing Zhang
- Inventors: Matthew Hartensveld; Jing Zhang
- Web page: https://patentgrep.com/patent/US12015105B2

## CPC

- H10H 20/062: {Light-emitting semiconductor devices having field effect type light-emitting regions, e.g. light-emitting High-Electron Mobility Transistors}
- H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 20/034: {of coatings}
- H10H 20/831: characterised by their shape
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A method and device for electrostatically controlling charges in an electrostatic field effect optoelectronic device by modulating charges in at least one layer of the electrostatic field effect optoelectronic device by providing either a positive bias or a negative bias to a capacitively coupled plate of the electrostatic field effect optoelectronic device thereby adjusting the charge utilization efficiency of the device.

## Claims

### Claim 1

A method for electrostatically controlling charges in an electrostatic field effect optoelectronic device, comprising:
applying a voltage between an electrical contact of a first doped layer and an electrical contact of a second doped layer of the electrostatic field effect optoelectronic device while
providing either a fixed positive bias or a fixed negative bias to a capacitively coupled plate of the electrostatic field effect optoelectronic device thereby adjusting the charge utilization efficiency of the device.

### Claim 2 (depends on 1)

The method of claim 1, wherein adjusting the charge utilization efficiency of the device comprises increasing the efficiency of the device.

### Claim 3 (depends on 1)

The method of claim 1, wherein adjusting the charge utilization efficiency of the device comprises decreasing the efficiency of the device.

### Claim 4 (depends on 1)

The method of claim 1, wherein the electrostatic field effect optoelectronic device further comprises an MQW region between the first doped layer and the second doped layer.

### Claim 5 (depends on 4)

The method of claim 4, wherein adjusting the charge utilization efficiency of the device comprises increasing the efficiency of the device.

### Claim 6 (depends on 4)

The method of claim 4, wherein adjusting the charge utilization efficiency of the device comprises decreasing the efficiency of the device.

### Claim 7 (depends on 1)

The method of claim 1, wherein the electrostatic field effect optoelectronic device comprises:
an insulating layer adjacent to and in direct contact with the second doped layer, wherein the second doped layer is between the first doped layer and the insulating layer, wherein the first doped layer and the second doped layer are not in direct contact with a common insulating layer; and
a capacitively coupled plate adjacent to and in direct contact with the insulating layer, wherein the first doped layer is n-type doped and the second doped layer is p-type doped or the first doped layer is p-type doped and the second doped layer is n-type doped.

### Claim 8 (depends on 7)

The method of claim 7, wherein the device further comprises a p-type contact adjacent the p-type doped layer.

### Claim 9 (depends on 7)

The method of claim 7, wherein the device further comprises a n-type contact adjacent the n-type doped layer.

### Claim 10 (depends on 7)

The method of claim 7, wherein the device further comprises a p-type contact adjacent the p-type doped layer and a n-type contact adjacent the n-type doped layer.