# US 12,015,104 B2 · Composite reflective structure and light-emitting diode chip and light-emitting diode device including the same

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- Number: US 12,015,104 B2
- Document ID: US12015104B2
- Status: Granted
- Kind: B2
- Application number: 17/349,481
- Filed: 2021-06-16
- Published: 2021-10-07
- Granted: 2024-06-18
- Earliest claimed: 2019-04-08
- Assignees: Xiamen San'an Optoelectronics Co., Ltd.
- Applicants: Xiamen San'an Optoelectronics Co. Ltd.
- Inventors: Chung-Ying Chang; Ji-Pu Wu; Hongbin Tang; Qihua Liao; Yu-Tsai Teng; Chia-Hao Chang; Shutian Qiu
- Web page: https://patentgrep.com/patent/US12015104B2

## CPC

- H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors
- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/8506: {Containers}
- H10H 20/853: characterised by their shape
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A composite reflective structure includes at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed therebetween. The first refractive index is greater than the second refractive index. Also disclosed herein is a light-emitting diode chip including the abovementioned composite reflective structure and a light-emitting diode device including the light-emitting diode chip.

## Claims

### Claim 1

A composite reflective structure, comprising:
at least one dielectric multilayer element which includes a first dielectric layer having a first refractive index, a second dielectric layer having a second refractive index, and a stress buffer layer interposed between said first dielectric layer and said second dielectric layer, said first refractive index being greater than said second refractive index,
wherein said stress buffer laver includes at least two materials selected from the group consisting of titanium dioxide, tantalum pentoxide, aluminium oxide and niobium pentoxide.

### Claim 2 (depends on 1)

The composite reflective structure of claim 1, wherein a stress generated between said stress buffer layer and said first dielectric layer is smaller than a stress generated between said first dielectric layer and said second dielectric layer.

### Claim 3 (depends on 1)

The composite reflective structure of claim 1, wherein a stress generated between said stress buffer layer and said second dielectric layer is smaller than a stress generated between said first dielectric layer and said second dielectric layer.

### Claim 4 (depends on 1)

The composite reflective structure of claim 1, wherein said first dielectric layer includes a material selected from the group consisting of titanium dioxide, tantalum pentoxide, lead oxide, zinc sulfide, selenium oxide, and combinations thereof.

### Claim 5 (depends on 1)

The composite reflective structure of claim 1, wherein said second dielectric layer includes a material selected from the group consisting of silicon dioxide, magnesium fluoride, barium fluoride, calcium fluoride, thorium fluoride, and combinations thereof.

### Claim 6 (depends on 1)

The composite reflective structure of claim 1, wherein said stress buffer layer includes titanium dioxide and one of tantalum pentoxide, aluminium oxide and niobium pentoxide.

### Claim 7 (depends on 1)

The composite reflective structure of claim 1, wherein said stress buffer layer has a third refractive index which is smaller than said first refractive index, and which is greater than said second refractive index.

### Claim 8 (depends on 1)

The composite reflective structure of claim 1, wherein said stress buffer layer is formed by one of plasma coating and ion beam-assisted deposition.

### Claim 9 (depends on 1)

The composite reflective structure of claim 1, comprising a plurality of said dielectric multilayer element.

### Claim 10 (depends on 1)

A light-emitting diode chip, comprising a light-emitting structure, and a composite reflective structure as claimed in claim 1 which is disposed on said light-emitting structure.

### Claim 11 (depends on 10)

The light-emitting diode chip of claim 10, wherein said light-emitting structure is made of a gallium nitride-based material.

### Claim 12 (depends on 10)

A light-emitting diode device, comprising a packaged body which includes leads, and a light-emitting diode chip as claimed in claim 10 which is mounted in said packaged body and which is electrically connected to said leads.