# US 12,015,103 B2 · Micro light emitting diode display panel with option of choosing to emit light both or respectively of light-emitting regions > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,103 B2 - Document ID: US12015103B2 - Status: Granted - Kind: B2 - Application number: 17/315,366 - Filed: 2021-05-10 - Published: 2021-09-09 - Granted: 2024-06-18 - Earliest claimed: 2017-01-10 - Assignees: PlayNitride Display Co., Ltd. - Applicants: PlayNitride Display Co., Ltd. - Inventors: Yu-Yun Lo; Bo-Wei Wu; Shiang-Ning Yang; Chang-Feng Tsai - Web page: https://patentgrep.com/patent/US12015103B2 ## CPC - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - C30B 25/183: {being provided with a buffer layer, e.g. a lattice matching layer} - C30B 29/406: {Gallium nitride} - G09G 3/32: semiconductive, e.g. using light-emitting diodes [LED] - H10D 86/021: {of multiple TFTs} - H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO} - H10D 86/60: wherein the TFTs are in active matrices - H10F 39/016: {of thin-film-based image sensors} - H10H 29/14: comprising multiple light-emitting semiconductor components - H10W 90/00: Package configurations - G09G 2300/0452: Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components - H10H 20/813: having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies - H10H 20/8312: {extending at least partially through the bodies} - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00) - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A micro light emitting diode display panel includes a backplane and a plurality of micro light emitting diode chips. The backplane includes a plurality first electrode lines and a plurality of second electrode lines. The first electrode lines and the second electrode lines define a plurality of sub-pixel regions arranged in an array form. The micro light emitting diode chips are disposed on the backplane and respectively located in the sub-pixel regions. Each of the micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions. The first electrode is boned to one of the first electrode lines, and the second electrodes are boned to one of the second met lines. In a defect sub-pixel region, the electrical connection between one of the second electrodes and the corresponding one of the second electrode lines is cut to isolate. ## Claims ### Claim 1 A micro light emitting diode display panel comprises: a backplane comprising a plurality first electrode lines and a plurality of second electrode lines, wherein the plurality of first electrode lines and the plurality of second electrode lines define a plurality of sub-pixel regions arranged in an array form; and a plurality of micro light emitting diode chips disposed on the backplane and respectively located in the sub-pixel regions, wherein each of the plurality of micro light emitting diode chips has a first electrode, a plurality of second electrodes and a plurality of light-emitting regions, the first electrode is bonded to one of the plurality of first electrode lines, and the plurality of second electrodes are bonded to one of the plurality of second electrode lines, and each of the plurality of light-emitting regions is defined by the first electrode and one of the plurality of second electrodes to emit light, in a defect sub-pixel region, the electrical connection between one of the plurality of second electrodes and the corresponding one of the plurality of second electrode lines is cut to isolate; and wherein the plurality of second electrodes comprise four second electrodes, and the four second electrodes surround the first electrode, and the plurality of light-emitting regions comprise four light-emitting regions. ### Claim 2 (depends on 1) The micro light emitting diode display panel according to claim 1, wherein each of the plurality of light-emitting regions is controlled independently by the backplane. ### Claim 3 (depends on 1) The micro light emitting diode display panel according to claim 1, wherein each of the plurality of second electrode lines comprises a plurality of extended portions in each of the plurality of sub-pixel regions, and the plurality of second electrodes of each of the plurality of micro light emitting diode chips are respectively bonded to the plurality of extended portions. ### Claim 4 (depends on 1) The micro light emitting diode display panel according to claim 1, wherein an area of light-emitting regions in the defect sub-pixel region is less than an area of light-emitting regions in a normal sub-pixel region. ### Claim 5 (depends on 1) The micro light emitting diode display panel according to claim 1, wherein an area of the first electrode is greater than an area of each of the plurality of second electrodes. ### Claim 6 (depends on 1) The micro light emitting diode display panel according to claim 1, wherein the first electrode is a N-type electrode, and each of the plurality of second electrodes is a P-type electrode. ### Claim 7 (depends on 1) The micro light emitting diode display panel according to claim 1, wherein a projecting shape of the first electrode on the backplane is circle, and a projecting shape of each of the plurality of second electrodes on the backplane is rectangle.