# US 12,015,095 B2 · Solar cell and photovoltaic module

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- Number: US 12,015,095 B2
- Document ID: US12015095B2
- Status: Granted
- Kind: B2
- Application number: 18/098,343
- Filed: 2023-01-18
- Published: 2023-05-18
- Granted: 2024-06-18
- Earliest claimed: 2020-09-30
- Assignees: Zhejiang Jinko Solar Co., Ltd.; Jinko Solar Co., Ltd.
- Applicants: Zhejiang Jinko Solar Co., Ltd; Jinko Solar Co., Ltd.
- Inventors: Jie Yang; Peiting Zheng; Xinyu Zhang; Hao Jin
- Web page: https://patentgrep.com/patent/US12015095B2

## CPC

- H10F 10/146: {Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side}
- H10F 10/165: the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
- H10F 77/311: {for photovoltaic cells}
- H10F 77/315: {the coatings being antireflective or having enhancing optical properties}
- Y02E 10/546: Polycrystalline silicon PV cells
- Y02E 10/547: Monocrystalline silicon PV cells
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A solar cell and a photovoltaic module including the solar cell. The solar cell includes: a semiconductor substrate including a first surface and a second surface opposite to each other; a first dielectric layer located on the first surface; a first N+ doped layer located on a surface of the first dielectric layer; a first passivation layer located on a surface of the first N+ doped layer; a first electrode located on a surface of the first passivation layer; a second dielectric layer located on the second surface; a first P+ doped layer located on a surface of the second dielectric layer; a second passivation layer located on a surface of the first P+ doped layer; and a second electrode located on a surface of the second passivation layer.

## Claims

### Claim 1

A solar cell, comprising:
an N-type semiconductor substrate comprising a front surface and a back surface;
a first dielectric layer located on the front surface of the N-type semiconductor substrate;
a first N+ doped layer located on a surface of the first dielectric layer;
a first passivation layer located on a surface of the first N+ doped layer;
a first electrode located on a surface of the first passivation layer;
a second dielectric layer located on the back surface of the N-type semiconductor substrate;
a first P+ doped layer located on a surface of the second dielectric layer;
a second passivation layer located on a surface of the first P+ doped layer;
a second electrode located on a surface of the second passivation layer;
a third dielectric layer formed on a region of the surface of the first N+ doped layer; and
a second N+ doped layer located on the third dielectric layer,
wherein the first N+ doped layer and the first P+ doped layer are polycrystalline silicon layers, and a thickness of the first P+ doped layer is greater than a thickness of the first N+ doped layer,
wherein the first electrode penetrates through the first passivation layer to be in direct contact with the second N+ doped layer, and
wherein a thickness of the second N+ doped layer is greater than the thickness of the first N+ doped layer, and a thickness of the first dielectric layer is different from a thickness of the second dielectric layer.

### Claim 2 (depends on 1)

The solar cell according to claim 1, wherein the thickness of the first P+ doped layer is within a range from 80 nm to 300 nm, the thickness of the first N+ doped layer is within a range from 5 nm to 30 nm, and the first P+ doped layer is an emitter region.

### Claim 3 (depends on 1)

The solar cell according to claim 1, wherein the first N+ doped layer has a doping concentration in a range from 5×1019 cm−3 to 6×1020 cm−3, and the first P+ doped layer has a doping concentration in a range from 5×1019 cm−3 to 6×1020 cm−3.

### Claim 4 (depends on 1)

The solar cell according to claim 1, wherein the first dielectric layer is doped with phosphorus, and the second dielectric layer is doped with an element different from phosphorus.

### Claim 5 (depends on 1)

The solar cell according to claim 1, wherein a thickness of the second N+ doped layer is within a range of 50 nm to 150 nm.

### Claim 6 (depends on 1)

The solar cell according to claim 1, wherein the second electrode penetrates through the second passivation layer to be in direct contact with the first P+ doped layer.

### Claim 7 (depends on 1)

The solar cell according to claim 1, wherein the third dielectric layer and the second N+ doped layer both have a textured surface.

### Claim 8

A solar cell, comprising:
a P-type semiconductor substrate comprising a front surface and a back surface;
a first dielectric layer located on the front surface of the P-type semiconductor substrate;
a first P+ doped layer located on a surface of the first dielectric layer;
a first passivation layer located on a surface of the first P+ doped layer;
a first electrode located on a surface of the first passivation layer;
a second dielectric layer located on the back surface of the P-type semiconductor substrate;
a first N+ doped layer located on a surface of the second dielectric layer;
a second passivation layer located on a surface of the first N+ doped layer;
a second electrode located on a surface of the second passivation layer;
a third dielectric layer formed on a region of the surface of the first P+ doped layer; and
a second P+ doped layer located on the third dielectric layer,
wherein the first P+ doped layer and the first N+ doped layer are polycrystalline silicon layers, and a thickness of the first N+ doped layer is greater than a thickness of the first P+ doped layer,
wherein the first electrode penetrates through the first passivation layer to be in direct contact with the second P+ doped layer, and
wherein a thickness of the second P+ doped layer is greater than the thickness of the first P+ doped layer, and a thickness of the first dielectric layer is different from a thickness of the second dielectric layer.

### Claim 9 (depends on 8)

The solar cell according to claim 8, wherein the thickness of the first N+ doped layer is within a range from 80 nm to 300 nm, the thickness of the first P+ doped layer is within a range from 5 nm to 30 nm, and the first N+ doped layer is an emitter region.

### Claim 10 (depends on 8)

The solar cell according to claim 8, wherein the first N+ doped layer has a doping concentration in a range from 5×1019 cm−3 to 6×1020 cm−3, and the first P+ doped layer has a doping concentration in a range from 5×1019 cm−3 to 6×1020 cm−3.

### Claim 11 (depends on 8)

The solar cell according to claim 8, wherein the first dielectric layer or the second dielectric layer is doped with phosphorus.

### Claim 12 (depends on 8)

The solar cell according to claim 8, wherein a thickness of the second P+ doped layer is within a range of 50 nm to 150 nm.

### Claim 13 (depends on 8)

The solar cell according to claim 8, wherein the second electrode penetrates through the second passivation layer to be in direct contact with the first N+ doped layer.

### Claim 14 (depends on 8)

The solar cell according to claim 8, wherein the third dielectric layer and the second P+ doped layer both have a textured surface.