# US 12,015,080 B2 · Integrated assemblies and methods of forming integrated assemblies > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,080 B2 - Document ID: US12015080B2 - Status: Granted - Kind: B2 - Application number: 16/998,877 - Filed: 2020-08-20 - Published: 2022-02-24 - Granted: 2024-06-18 - Earliest claimed: 2020-08-20 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Yoshitaka Nakamura; Yi Fang Lee; Jerome A. Imonigie; Scott E. Sills; Aaron Michael Lowe - Web page: https://patentgrep.com/patent/US12015080B2 ## CPC - H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence) - H10B 12/05: {Making the transistor} - H10B 12/31: {having a storage electrode stacked over the transistor} - H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)} - H10D 62/292: {Non-planar channels of IGFETs (resulting from the gate electrode dispositions, e.g. within trenches H10D64/512)} - H10D 62/80: characterised by the materials - H10D 64/252: {for vertical or pseudo-vertical devices} - H10D 64/2527: {for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies} - H10D 64/62: Electrodes ohmically coupled to a semiconductor - H10B 12/315: {with the capacitor higher than a bit line} - H10D 62/875: {being semiconductor metal oxide, e.g. InGaZnO (Group II-VI materials H10D62/86; Group I-VI materials H10D62/871; Pb compounds or alloys H10D62/874)} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10B: ELECTRONIC MEMORY DEVICES ## Abstract Some embodiments include an integrated assembly having an access device between a storage element and a conductive structure. The access device has channel material which includes semiconductor material. The channel material has a first end and an opposing second end, and has a side extending from the first end to the second end. The first end is adjacent the conductive structure, and the second end is adjacent the storage element. Conductive gate material is adjacent the side of the channel material. A first domed metal-containing cap is over the conductive structure and under the channel material and/or a second domed metal-containing cap is over the channel material and under the storage element. Some embodiments include methods of forming integrated assemblies. ## Claims ### Claim 1 An integrated assembly comprising an access device between a storage element and a conductive structure; the access device comprising: channel material comprising semiconductor material; the channel material having a first end and an opposing second end, and having a side extending from the first end to the second end; the first end being adjacent the conductive structure, and the second end being adjacent the storage element; the semiconductor material comprising at least one element selected from Group 13 of the periodic table in combination with at least one element selected from Group 16 of the periodic table; conductive gate material adjacent the side of the channel material; and at least one of a first domed metal-containing cap over the conductive structure and under the channel material and a second domed metal-containing cap over the channel material and under the storage element. ### Claim 2 (depends on 1) The integrated assembly of claim 1 wherein the semiconductor material is a semiconductor oxide. ### Claim 3 (depends on 1) The integrated assembly of claim 1 wherein the conductive structure is a first linear structure and is coupled with sensing circuitry, and wherein the conductive gate material is part of a second linear structure which is coupled with driver circuitry. ### Claim 4 (depends on 1) The integrated assembly of claim 1 comprising the first domed metal-containing cap. ### Claim 5 (depends on 1) The integrated assembly of claim 1 comprising the second domed metal-containing cap. ### Claim 6 (depends on 1) The integrated assembly of claim 1 comprising both the first domed metal-containing cap and the second domed metal-containing cap. ### Claim 7 (depends on 1) The integrated assembly of claim 1 wherein the storage element and the access device are within a memory cell, and wherein the memory cell is one of many substantially identical memory cells of a memory array. ### Claim 8 (depends on 1) The integrated assembly of claim 1 comprising insulative material between the conductive gate material and the channel material. ### Claim 9 (depends on 8) The integrated assembly of claim 8 wherein the insulative material comprises silicon dioxide and/or one or more high-k compositions. ### Claim 10 (depends on 1) The integrated assembly of claim 1 comprising: a first conductive region between the conductive structure and the channel material; and a second conductive region over the channel material, wherein the first and second conductive regions comprise conductive oxide. ### Claim 11 (depends on 10) The integrated assembly of claim 10 comprising: the second domed metal-containing cap over and directly against the conductive oxide of the second conductive region; and a conductive interconnect over the second domed metal-containing cap, the conductive interconnect being electrically coupled with the storage element. ### Claim 12 (depends on 11) The integrated assembly of claim 11 wherein the conductive interconnect comprises metal nitride directly against the second domed metal-containing cap. ### Claim 13 (depends on 12) The integrated assembly of claim 12 wherein the metal nitride is configured as an upwardly-opening container shape, and comprising a metal-containing core material within the upwardly-opening container shape; the core material consisting essentially of one or more metals. ### Claim 14 (depends on 13) The integrated assembly of claim 13 wherein the metal nitride comprises one or more of titanium nitride, molybdenum nitride and tungsten nitride, and wherein the core material comprises one or more of titanium, molybdenum and tungsten. ### Claim 15 A device comprising: semiconductor material comprising a transistor channel and at least one element selected from Group 13 of the periodic table in combination with at least one element selected from Group 16 of the periodic table, the transistor channel comprising a domed uppermost surface; a conductive structure beneath the semiconductor material and configured to be electrically coupled with the semiconductor material in at least one operational mode of the device; a domed metal-containing cap over the conductive structure and under the semiconductor material; a source/drain region against the domed uppermost surface of the transistor channel; and wherein the source/drain region comprises an indented lowermost surface against the domed uppermost surface of the transistor channel.