# US 12,015,072 B2 · Semiconductor device including cation species, manufacturing method thereof, and electronic equipment > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,072 B2 - Document ID: US12015072B2 - Status: Granted - Kind: B2 - Application number: 17/299,694 - Filed: 2019-11-29 - Published: 2022-02-24 - Granted: 2024-06-18 - Earliest claimed: 2018-12-20 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Kazuyuki Tomida - Web page: https://patentgrep.com/patent/US12015072B2 ## CPC - H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes} - H10D 64/689: {having ferroelectric layers} - H10D 30/62: Fin field-effect transistors [FinFET] - H10D 30/701: {IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs} - H10D 64/0134: {with a treatment, e.g. annealing, after the formation of the insulator and before the formation of the conductor} - H10D 64/01342: {by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence)} - H10D 64/033: {comprising ferroelectric layers} - H10D 64/685: {being perpendicular to the channel plane} - H10D 64/691: {comprising metallic compounds, e.g. metal oxides or metal silicates (insulators comprising nitrogen H10D64/693)} - H10D 84/85: Complementary IGFETs, e.g. CMOS - H10D 64/01316: {the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al} - H10D 64/01318: {the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN (comprising a layer of alloys of Si, Ge or C H10D64/01314)} - H10D 64/0132: {the conductor being a metallic silicide} - H10D 84/0177: {the gate conductors having different materials or different implants} - H10D 84/038: {using silicon technology, e.g. SiGe} - H10D 84/83135: {the IGFETs characterised by having different gate conductor materials or different gate conductor implants} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract There is provided a semiconductor device including a channel portion, and a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion, in which the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion. ## Claims ### Claim 1 A semiconductor device, comprising: a channel portion; and a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion, wherein the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and wherein the first portion does not include the cation species. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein a transition metal element contained in the first transition metal oxide, and a transition metal element contained in the second transition metal oxide each include at least one of Hf and Zr. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the first transition metal oxide is identical to the second transition metal oxide. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein a film thickness of the first portion and a film thickness of the second portion are 2 nm or more and 30 nm or less. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the cation species includes at least one of Si, Ge, Sn, Al, Ga, In, Sr, Sc, Y, La, Ti, Ce, Nb, Ta, and Gd. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the cation species in the second portion has a concentration gradient. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein a dielectric constant of the first portion is lower than a dielectric constant of the second portion. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the first portion is provided extending over side surfaces of the gate electrode. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, further comprising: a sidewall portion provided in contact with the gate insulating film, wherein the first portion only is sandwiched between the gate electrode and the sidewall portion. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the gate insulating film is provided such that a plurality of films is stacked on top of another. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein the channel portion is provided in a semiconductor substrate. ### Claim 12 (depends on 1) The semiconductor device according to claim 1, wherein the channel portion is provided in a semiconductor layer which is provided in a projecting manner. ### Claim 13 A manufacturing method of a semiconductor device, comprising: forming a channel portion; and forming a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion, wherein the gate insulating film is formed so as to include a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and wherein the first portion does not include the cation species. ### Claim 14 (depends on 13) The manufacturing method of a semiconductor device according to claim 13, wherein the cation species is doped through an ion implantation technique. ### Claim 15 Electronic equipment comprising: a channel portion; and a gate electrode provided on a side opposite to the channel portion with a gate insulating film interposed between the gate electrode and the channel portion, wherein the gate insulating film incudes a first portion having a first transition metal oxide, and a second portion having a second transition metal oxide and cation species and having a concentration of the cation species different from the first portion, and wherein the first portion does not include the cation species. ### Claim 16 (depends on 15) The electronic equipment according to claim 15, wherein a transition metal element contained in the first transition metal oxide, and a transition metal element contained in the second transition metal oxide each include at least one of Hf and Zr. ### Claim 17 (depends on 15) The electronic equipment according to claim 15, wherein the first transition metal oxide is identical to the second transition metal oxide. ### Claim 18 (depends on 15) The electronic equipment according to claim 15, wherein a film thickness of the first portion and a film thickness of the second portion are 2 nm or more and 30 nm or less. ### Claim 19 (depends on 15) The electronic equipment according to claim 15, wherein the cation species includes at least one of Si, Ge, Sn, Al, Ga, In, Sr, Sc, Y, La, Ti, Ce, Nb, Ta, and Gd. ### Claim 20 (depends on 15) The electronic equipment according to claim 15, wherein the cation species in the second portion has a concentration gradient.