# US 12,015,061 B2 · Radio frequency switch

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- Number: US 12,015,061 B2
- Document ID: US12015061B2
- Status: Granted
- Kind: B2
- Application number: 17/168,531
- Filed: 2021-02-05
- Published: 2021-12-30
- Granted: 2024-06-18
- Earliest claimed: 2020-06-30
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Jongmo Lim; Wonsun Hwang; Byeonghak Jo; Yoosam Na; Youngsik Hur
- Web page: https://patentgrep.com/patent/US12015061B2

## CPC

- H10D 64/257: {for lateral devices wherein the source or drain electrodes are characterised by top-view geometrical layouts, e.g. interdigitated, semi-circular, annular or L-shaped electrodes (source or drain electrodes of TFTs H10D30/673)}
- H03K 17/08104: {in field-effect transistor switches (H03K17/0812, H03K17/0814 take precedence)}
- H10D 84/83: of only insulated-gate FETs [IGFET]
- H10D 89/10: Integrated device layouts
- H03K 17/102: {in field-effect transistor switches}
- H10D 84/0149: {Manufacturing their interconnections or electrodes, e.g. source or drain electrodes}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M)

## Abstract

A radio frequency (RF) switch is provided. The RF switch is configured to switch a RF signal input to a first terminal. The RF switch includes a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal, and a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal. The first distance is shorter than the second distance, and a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor.

## Claims

### Claim 1

A radio frequency (RF) switch configured to switch a RF signal input to a first terminal, the RF switch comprising:
a first transistor, disposed at a first distance from the first terminal, and configured to switch the RF signal; and
a second transistor, disposed at a second distance from the first terminal, and configured to switch the RF signal,
wherein the first distance is shorter than the second distance,
wherein a number of first contact vias formed in a first electrode in the first transistor is greater than a number of second contact vias formed in a second electrode of the second transistor,
wherein a width of the first electrode of the first transistor is larger than a width of the second electrode of the second transistor, and
wherein a distance between the first electrode of the first transistor and a control electrode of the first transistor is shorter than a distance between the second electrode of the second transistor and a control electrode of the second transistor.

### Claim 2 (depends on 1)

The RF switch of claim 1, wherein the first contact via is a via that connects the first electrode and a the first transistor, and the doping area of the first transistor, and the second contact via is a via that connects the second electrode and a doping area of the second transistor.

### Claim 3 (depends on 1)

The RF switch of claim 1, wherein an area of the first contact via is larger than an area of the second contact via.

### Claim 4 (depends on 1)

The RF switch of claim 1, wherein the first transistor and the second transistor have a structure in which the first terminal and a second terminal of the RF switch are stacked.

### Claim 5 (depends on 4)

The RF switch of claim 4, wherein an impedance value that corresponds to the first transistor when the first transistor is turned off, is smaller than an impedance value that corresponds to the second transistor when the second transistor is turned off.

### Claim 6

A radio frequency (RF) switch configured to switch between a first terminal and a second terminal, the RF switch comprising:
a first transistor, disposed at a first distance from the first terminal, and including a first control electrode to which a switching signal is applied; and
a second transistor, disposed at a second distance from the first terminal, and including a second control electrode to which the switching signal is applied,
wherein the first distance is shorter than the second distance, and a third distance between a first electrode of the first transistor and the first control electrode is shorter than a fourth distance between a second electrode of the second transistor and the second control electrode, and
wherein a number of contact vias formed in the first electrode is greater than a number of contact vias formed in the second electrode.

### Claim 7 (depends on 6)

The RF switch of claim 6, wherein the first electrode is at least one of a drain electrode and a source electrode of the first transistor, and the second electrode is at least one of a drain electrode and a source electrode of the second transistor.

### Claim 8 (depends on 6)

The RF switch of claim 6, wherein the third distance is a distance from a contact point of the first electrode and a doping area of the first transistor to the first control electrode, and
the fourth distance is a distance from a contact point of the second electrode and a doping area of the second transistor to the second control electrode.

### Claim 9 (depends on 6)

The RF switch of claim 6, wherein the third distance is a spatial distance between the first electrode and the first control electrode, and the fourth distance is a spatial distance between the second electrode and the second control electrode.

### Claim 10 (depends on 6)

The RF switch of claim 6, wherein a width of the first electrode is larger than a width of the second electrode.

### Claim 11 (depends on 6)

The RF switch of claim 6, wherein the first transistor and the second transistor are coupled in series between the first terminal and the second terminal.

### Claim 12 (depends on 6)

The RF switch of claim 6, wherein an impedance value corresponding to the first transistor when the first transistor is turned off is smaller than an impedance value corresponding to the second transistor when the second transistor is turned off.

### Claim 13 (depends on 6)

The RF switch of claim 6, wherein an RF signal is applied to the first terminal and the second terminal is connected to ground.

### Claim 14 (depends on 6)

The RF switch of claim 6, wherein an RF signal is applied to the first terminal and the second terminal is connected to an impedance element configured to provide an impedance value to an antenna.