# US 12,015,046 B2 · Back-illuminated sensor with boron layer deposited using plasma atomic layer deposition

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- Number: US 12,015,046 B2
- Document ID: US12015046B2
- Status: Granted
- Kind: B2
- Application number: 17/544,413
- Filed: 2021-12-07
- Published: 2022-08-11
- Granted: 2024-06-18
- Earliest claimed: 2021-02-05
- Assignees: KLA Corporation
- Applicants: KLA Corporation
- Inventors: Sisir Yalamanchili; John Fielden; Francisco Kole; Yung-Ho Alex Chuang
- Web page: https://patentgrep.com/patent/US12015046B2

## CPC

- H10F 39/028: {performed after manufacture of the image sensors, e.g. annealing, gettering of impurities, short-circuit elimination or recrystallisation}
- C23C 16/0227: {by cleaning or etching}
- C23C 16/28: Deposition of only one other non-metal element
- C23C 16/45525: {Atomic layer deposition [ALD]}
- C23C 16/45542: {Plasma being used non-continuously during the ALD reactions}
- C23C 16/50: using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)}
- G01N 21/9501: {Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)}
- G01N 21/956: Inspecting patterns on the surface of objects {(contactless testing of electronic circuits G01R31/308; testing currency G07D; manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20)}
- G03F 7/70033: {by plasma extreme ultraviolet [EUV] sources}
- H10F 39/199: {Back-illuminated image sensors}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.

## Claims

### Claim 1

A method of fabricating an image sensor configured to sense at least one of deep ultraviolet (DUV) radiation, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation, and charged particles, the method comprising:
forming front-end circuit structures on a first surface of a semiconductor membrane; and
performing a plurality of plasma atomic layer (ALD) cycles such that sequentially generated boron nanolayers collectively form a pure boron layer on a second surface of the semiconductor membrane, wherein each said plasma ALD cycle includes:
disposing a boron precursor over the second surface of the semiconductor membrane during an first phase of said each plasma ALD cycle such that an adsorbed portion of the boron precursor forms a boron precursor layer over the second surface of the semiconductor membrane; and
generating a hydrogen plasma over the boron precursor layer during a second phase of said each plasma ALD cycle such that a gaseous reaction of the adsorbed boron precursor portion produces an associated said boron nanolayer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
disposing the semiconductor membrane in a deposition chamber;
cleaning the second surface of the semiconductor membrane by generating a hydrogen plasma over the second surface; and
performing said plurality of plasma ALD cycles immediately after said cleaning,
wherein said cleaning and said plurality of plasma ALD cycles are performed while said semiconductor membrane is continuously maintained in said deposition chamber.

### Claim 3 (depends on 2)

The method of claim 2,
wherein the deposition chamber includes a gas flow system configured to selectively deliver said boron precursor and said hydrogen into said deposition chamber, and a plasma generating system configured to generate a plasma adjacent to the second surface of the semiconductor membrane, and
wherein disposing said boron precursor comprises controlling said gas flow system to deliver said boron precursor into the deposition chamber while deactivating said plasma generating system.

### Claim 4 (depends on 3)

The method of claim 3, wherein controlling said gas delivery system comprises flowing one of B2H6, BX3 (X═Cl/Br), B2F4, tri-methyl borane (TMB), tris(dimethylamido)borane (TDMAB), and tri-ethyl borane (TEB) into the deposition chamber.

### Claim 5 (depends on 3)

The method of claim 3, wherein generating said hydrogen plasma comprises controlling said gas flow system to deliver hydrogen gas into the deposition chamber while activating said plasma generating system.

### Claim 6 (depends on 2)

The method of claim 2, wherein each said plasma ALD cycle further comprises:
purging residual boron precursor gas from the deposition chamber during a first time period between said first phase and said second phase; and
purging residual reactant gases from the deposition chamber during a second time period after said second cycle phase.

### Claim 7 (depends on 1)

The method of claim 1, wherein the semiconductor membrane comprises an epitaxial layer having a thickness in the range of 10 μm and 40 μm, and wherein performing said plurality of plasma ALD cycles comprises repeating said boron precursor disposition and said hydrogen plasma generation until a thickness of said pure boron layer is in the range of 2 nm to 20 nm.

### Claim 8 (depends on 1)

The method of claim 1, further comprising forming one of an anti-reflection coating and a capping layer on the pure boron layer.

### Claim 9 (depends on 1)

The method of claim 1,
wherein forming the front-end circuit structures comprises forming said front-end circuit structures on a p-doped epitaxial silicon layer having a first p-type doping concentration, and
wherein the method further comprises performing a high-temperature drive-in process to form a highly p-doped epitaxial silicon layer region between a retained portion of p-doped epitaxial silicon layer and said pure boron layer.

### Claim 10 (depends on 9)

The method of claim 9, further comprising forming metal interconnects over the front-end circuit structures after forming said highly p-doped epitaxial silicon layer region.

### Claim 11 (depends on 1)

The method of claim 1, further comprising performing one of a wet etch and a dry etch to texture said second surface before forming said pure boron layer.

### Claim 12 (depends on 1)

The method of claim 1, further comprising forming said semiconductor membrane by forming a p-doped epitaxial silicon layer having a first p-type doping concentration on a top silicon substrate of a silicon-on-insulator (SOI) wafer, wherein the top silicon substrate has a second p-type doping concentration that is greater than the first p-type doping concentration.

### Claim 13 (depends on 12)

The method of claim 12, wherein forming said semiconductor membrane further comprises highly p-doping said top silicon substrate of said SOI wafer before forming said p-doped epitaxial silicon layer.

### Claim 14 (depends on 12)

The method of claim 12,
wherein the SOI wafer includes a first handle substrate and an oxide layer disposed between the first handle substrate and the top silicon substrate,
wherein forming the front-end circuit structures comprises forming frontside circuit elements including front-end circuit structures disposed on a frontside surface of said p-doped epitaxial silicon layer and metal interconnects disposed over the front-end circuit structures, and
wherein the method further comprises:
attaching a second handle wafer to the semiconductor membrane over the frontside circuit elements;
back-thinning the first handle wafer to expose at least a portion of the top silicon substrate, where said exposed portion of the top silicon substrate forms the second surface of said semiconductor membrane.

### Claim 15 (depends on 12)

The method of claim 12, wherein performing said plasma ALD cycles comprises maintaining the frontside circuit elements at a temperature lower than 450° C.

### Claim 16 (depends on 12)

The method of claim 12, wherein the method further comprises forming through-silicon vias in the semiconductor membrane before forming the pure boron layer.

### Claim 17 (depends on 16)

The method of claim 16, wherein the method further comprises etching portions of the pure boron layer to expose the through-silicon vias.

### Claim 18 (depends on 1)

The method of claim 1, wherein forming said front-end circuit structures comprises fabricating one of a charge-coupled device (CCD) or a complementary metal-oxide-semiconductor (CMOS) device.

### Claim 19 (depends on 1)

An image sensor for sensing at least one of: deep ultraviolet (DUV) radiation, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation, and charged particles, the image sensor comprising a semiconductor membrane, circuit elements formed on a first surface of the semiconductor membrane and a pure boron layer formed on a second surface of the semiconductor membrane, wherein the pure boron layer is formed in accordance with the method of claim 1.

### Claim 20 (depends on 1)

An inspection system comprising: an illumination source; a set of optics including an objective lens configured to direct and focus incident light from the illumination source onto a sample and to collect, direct, and focus reflected/scattered light from the sample onto a detector assembly, wherein the detector includes one or more image sensors configured to sense at least one of deep ultraviolet (DUV) radiation, vacuum ultraviolet (VUV) radiation, extreme ultraviolet (EUV) radiation, and charged particles, wherein each said image sensor comprises a semiconductor membrane, circuit elements formed on a first surface of the semiconductor membrane and a pure boron layer formed on a second surface of the semiconductor membrane, wherein the pure boron layer is formed in accordance with the method of claim 1.