# US 12,015,040 B2 · Solid-state imaging device, method of manufacturing the same, and electronic apparatus capable to protect a photoelectric conversion film

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- Number: US 12,015,040 B2
- Document ID: US12015040B2
- Status: Granted
- Kind: B2
- Application number: 16/940,228
- Filed: 2020-07-27
- Published: 2021-01-14
- Granted: 2024-06-18
- Earliest claimed: 2016-03-29
- Assignees: Sony Corporation
- Applicants: Sony Corporation
- Inventors: Shigehiro Ikehara; Masahiro Joei
- Web page: https://patentgrep.com/patent/US12015040B2

## CPC

- H10F 39/8057: {Optical shielding}
- H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors
- H10F 39/182: {Colour image sensors}
- H10F 39/191: {Photoconductor image sensors}
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/805: {Coatings}
- H10F 77/331: {for filtering or shielding light, e.g. multicolour filters for photodetectors}
- H10K 30/88: Passivation; Containers; Encapsulations
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10F 39/812: {Arrangements for transferring the charges in the image sensor perpendicular to the imaging plane, e.g. buried regions used to transfer generated charges to circuitry under the photosensitive region}
- H10K 39/32: Organic image sensors
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

The present technology relates to a solid-state imaging device capable of protecting a photoelectric conversion film with a sealing film that has excellent sealing properties and coverage, a method of manufacturing the solid-state imaging device, and an electronic apparatus. A solid-state imaging device includes: a photoelectric conversion film formed on the upper side of a semiconductor substrate; and a sealing film that is formed on the upper layer of the photoelectric conversion film and has a lower etching rate than that of silicon oxide. The present technology can be applied to solid-state imaging devices having a photoelectric conversion film on the upper side of a semiconductor substrate, and the like, for example.

## Claims

### Claim 1

A solid-state imaging device, comprising:
a semiconductor substrate;
a photoelectric conversion film on an upper side of the semiconductor substrate;
a first sealing film above the photoelectric conversion film;
a second sealing film above the first sealing film, wherein the second sealing film includes a first layer and a second layer;
a third sealing film between the first sealing film and the second sealing film, wherein
the first layer of the second sealing film is under the third sealing film,
the second layer of the second sealing film is on the third sealing film,
the first layer of the second sealing film covers an entire lower surface of the third sealing film,
the second layer of the second sealing film covers an entire upper surface of the third sealing film,
the first layer of the second sealing film is on the first sealing film, and
the first layer of the second sealing film is thinner than the second layer of the second sealing film; and
a light shielding film between the first sealing film and the first layer of the second sealing film, wherein
the light shielding film is on the first sealing film, and
each of the first layer of the second sealing film, the second layer of the second sealing film, and the third sealing film is on the light shielding film.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a fourth sealing film, wherein the first sealing film is on the fourth sealing film.

### Claim 3 (depends on 2)

The solid-state imaging device according to claim 2, further comprising a fifth sealing film below the fourth sealing film, wherein
the fifth sealing film is a peeling prevention film that prevent a peeling process of the photoelectric conversion film, and
a material of the fifth sealing film is different from a material of the fourth sealing film.

### Claim 4 (depends on 2)

The solid-state imaging device according to claim 2, wherein the fourth sealing film comprises silicon carbide oxide.

### Claim 5 (depends on 1)

The solid-state imaging device according to claim 1, wherein the second sealing film is on an upper layer of the light shielding film via the first sealing film.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1, wherein the second sealing film is directly on the light shielding film.

### Claim 7 (depends on 1)

The solid-state imaging device according to claim 1, further comprising a fourth sealing film that is below the first sealing film, wherein the fourth sealing film covers a side surface of an end portion of the photoelectric conversion film.

### Claim 8 (depends on 1)

The solid-state imaging device according to claim 1, wherein
the first sealing film is on a lower side of the light shielding film, and
an etching rate of the first sealing film is higher than an etching rate of silicon oxide.

### Claim 9 (depends on 1)

The solid-state imaging device according to claim 1, wherein the photoelectric conversion film is an organic photoelectric conversion film that comprises an organic material.

### Claim 10 (depends on 1)

The solid-state imaging device according to claim 1, further comprising:
a fourth sealing film that is below the first sealing film; and
an electrode on the photoelectric conversion film, wherein
the fourth sealing film is on the electrode,
the fourth sealing film covers a side surface of an end portion of the photoelectric conversion film,
the fourth sealing film comprises an opening portion that exposes the electrode,
the light shielding film is on the fourth sealing film, and
the light shielding film is in contact with a portion of the electrode in the opening portion of the fourth sealing film.

### Claim 11

An electronic apparatus, comprising:
a solid-state imaging device including:
a semiconductor substrate;
a photoelectric conversion film on an upper side of the semiconductor substrate;
a first sealing film above the photoelectric conversion film;
a second sealing film above the first sealing film, wherein the second sealing film includes a first layer and a second layer;
a third sealing film between the first sealing film and the second sealing film, wherein
the first layer of the second sealing film is under the third sealing film,
the second layer of the second sealing film is on the third sealing film,
the first layer of the second sealing film covers an entire lower surface of the third sealing film,
the second layer of the second sealing film covers an entire upper surface of the third sealing film,
the first layer of the second sealing film is on the first sealing film, and
the first layer of the second sealing film is thinner than the second layer of the second sealing film; and
a light shielding film between the first sealing film and the first layer of the second sealing film, wherein
the light shielding film is on the first sealing film, and
each of the first layer of the second sealing film, the second layer of the second sealing film, and the third sealing film is on the light shielding film.