# US 12,015,039 B2 · Image pickup device and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,015,039 B2 - Document ID: US12015039B2 - Status: Granted - Kind: B2 - Application number: 17/369,288 - Filed: 2021-07-07 - Published: 2021-10-28 - Granted: 2024-06-18 - Earliest claimed: 2016-01-21 - Assignees: Sony Group Corporation - Applicants: Sony Group Corporation - Inventors: Satoe Miyata; Itaru Oshiyama - Web page: https://patentgrep.com/patent/US12015039B2 ## CPC - H10F 39/805: {Coatings} - H10F 39/182: {Colour image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/807: {Pixel isolation structures} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract The present technology relates to an image pickup device and an electronic apparatus that are configured to enhance characteristics. A solid-state image pickup device includes a photoelectric conversion section that is arranged on a semiconductor substrate and configured to photoelectrically convert an incident light, a moth-eye section that includes recesses and projections formed on a surface on a light incident side in the semiconductor substrate and has, when a cross section approximately parallel to a direction toward the photoelectric conversion section from the light incident side is viewed, a recessed portion protruding toward the side of the photoelectric conversion section, the recessed portion having a curvature or a polygonal shape, and a region that is arranged adjacent to and opposite to the photoelectric conversion section of the moth-eye section and has a refractive index different from a refractive index of the semiconductor substrate. ## Claims ### Claim 1 A light detecting device comprising: a semiconductor substrate including a first photoelectric conversion region and a first surface of a light incident side of the semiconductor substrate, wherein the first surface includes a moth-eye structure, the moth-eye structure including: a first portion including a first angled portion in a cross-sectional view; a second portion including a first radius of curvature in the cross-sectional view; a third portion including a second angled portion in the cross-sectional view; and a fourth portion including a second radius of curvature in the cross-sectional view, wherein the moth-eye structure is disposed above the first photoelectric conversion region in the cross-sectional view, wherein the first portion, the second portion, the third portion, and the fourth portion are disposed along at least part of the moth-eye structure in this order in the cross-sectional view, wherein the second portion and the fourth portion are more curved than the first portion and the third portion, wherein the second portion comprises a first part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the second portion and a second point on a second sidewall of the second portion across from the first sidewall of the second portion, and wherein the fourth portion comprises a second part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the fourth portion and a second point on a second sidewall of the fourth portion across from the first sidewall of the fourth portion. ### Claim 2 (depends on 1) The light detecting device according to claim 1, wherein the first portion and the third portion are closer to the first photoelectric conversion region than the second portion and the fourth portion in the cross-sectional view. ### Claim 3 (depends on 1) The light detecting device according to claim 1, wherein the second portion and the fourth portion are closer to the first photoelectric conversion region than the first portion and the third portion in the cross-sectional view. ### Claim 4 (depends on 1) The light detecting device according to claim 1, further comprising: a first oxide film disposed on the moth-eye structure. ### Claim 5 (depends on 4) The light detecting device according to claim 4, wherein the first oxide film is rounded at a part corresponding to the second portion and the fourth portion in the cross-sectional view. ### Claim 6 (depends on 5) The light detecting device according to claim 5, further comprising: a second oxide film disposed on the first oxide film, wherein the second oxide film is rounded at the part corresponding to the second portion and the fourth portion in the cross-sectional view. ### Claim 7 (depends on 1) The light detecting device according to claim 1, further comprising: a second photoelectric conversion region in the semiconductor substrate; and a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view. ### Claim 8 (depends on 7) The light detecting device according to claim 7, further comprising: a light-shielding portion disposed above the trench in the cross-sectional view. ### Claim 9 (depends on 8) The light detecting device according to claim 8, wherein the light-shielding portion includes metal. ### Claim 10 (depends on 7) The light detecting device according to claim 7, further comprising: an insulating film disposed above the first surface of the semiconductor substrate in the cross-sectional view. ### Claim 11 (depends on 10) The light detecting device according to claim 10, wherein the insulating film is disposed in the trench in the cross-sectional view. ### Claim 12 (depends on 1) The light detecting device according to claim 1, further comprising: a wiring layer disposed on a second surface of the semiconductor substrate opposite to the first surface in the cross-sectional view. ### Claim 13 An electronic apparatus, comprising: a lens; and a light detecting device comprising: a semiconductor substrate including a first photoelectric conversion region and a first surface of a light incident side of the semiconductor substrate, wherein the first surface includes a moth-eye structure, the moth-eye structure including: a first portion including a first angled portion in a cross-sectional view; a second portion including a first radius of curvature in the cross-sectional view; a third portion including a second angled portion in the cross-sectional view; a fourth portion including a second radius of curvature in the cross-sectional view, wherein the moth-eye structure is disposed above the first photoelectric conversion region in the cross-sectional view, wherein the first portion, the second portion, the third portion, and the fourth portion are disposed along at least part of the moth-eye structure in this order in the cross-sectional view, wherein the second portion and the fourth portion are more curved than the first portion and the third portion, wherein the second portion comprises a first part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the second portion and a second point on a second sidewall of the second portion across from the first sidewall of the second portion, and wherein the fourth portion comprises a second part of the first surface of the semiconductor substrate that is continually curved between a first point on a first sidewall of the fourth portion and a second point on a second sidewall of the fourth portion across from the first sidewall of the fourth portion. ### Claim 14 (depends on 13) The electronic apparatus according to claim 13, further comprising: an insulating film disposed above the first surface of the semiconductor substrate in the cross-sectional view. ### Claim 15 (depends on 13) The electronic apparatus according to claim 13, further comprising: a wiring layer disposed on a second surface of the semiconductor substrate opposite to the first surface in the cross-sectional view. ### Claim 16 (depends on 13) The electronic apparatus according to claim 13, further comprising: a first oxide film disposed on the moth-eye structure. ### Claim 17 (depends on 16) The electronic apparatus according to claim 16, wherein the first oxide film is rounded at a part corresponding to the second portion and the fourth portion in the cross-sectional view. ### Claim 18 (depends on 17) The electronic apparatus according to claim 17, further comprising: a second oxide film disposed on the first oxide film, wherein the second oxide film is rounded at the part corresponding to the second portion and the fourth portion in the cross-sectional view. ### Claim 19 (depends on 13) The electronic apparatus according to claim 13, further comprising: a second photoelectric conversion region in the semiconductor substrate; and a trench disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view. ### Claim 20 (depends on 19) The electronic apparatus according to claim 19, further comprising: a light-shielding portion disposed above the trench in the cross-sectional view.