# US 12,014,994 B2 · Method for forming overlay marks and semiconductor structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,014,994 B2 - Document ID: US12014994B2 - Status: Granted - Kind: B2 - Application number: 17/598,864 - Filed: 2021-06-24 - Published: 2023-07-13 - Granted: 2024-06-18 - Earliest claimed: 2021-02-25 - Assignees: Changxin Memory Technologies, Inc. - Applicants: Changxin Memory Technologies, Inc. - Inventors: Shuai Guo - Web page: https://patentgrep.com/patent/US12014994B2 ## CPC - G03F 7/70683: {Mark designs} - H10W 46/00: Marks applied to devices, e.g. for alignment or identification - G03F 7/70633: {Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching} - H10P 50/73: {using masks for insulating materials} - H10P 76/405: {characterised by their composition, e.g. multilayer masks} - H10W 46/301: {for alignment} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The method for forming overlay marks includes: providing a substrate, a surface of the substrate having a mark layer and a first mask layer; forming first trenches and second trenches in the first mask layer; forming a spacer layer covering side walls of the first trenches and side walls of the second trenches; backfilling the first trenches and the second trenches; removing the spacer layer; and etching the mark layer and forming main overlay marks and dummy overlay marks. ## Claims ### Claim 1 A method for forming overlay marks, comprising: providing a substrate, a surface of the substrate having a mark layer and a first mask layer, the first mask layer covering a surface of the mark layer, the mark layer comprising a first mark region and second mark regions at ends of the first mark region; patterning the first mask layer to form a first pattern region and second pattern regions in the first mask layer, the second pattern regions being at ends of the first pattern region, the first pattern region having a plurality of first trenches, the second pattern region having a plurality of second trenches, the first mark region corresponding to the first pattern region, the second mark regions corresponding to the second pattern regions; forming a spacer layer covering at least side walls of the first trenches and side walls of the second trenches; backfilling the first trenches and the second trenches to form a second mask layer; removing the spacer layer on the side walls of the first trenches completely, and removing the spacer layer on the side walls of the second trenches partially, to form etching windows between the first mask layer and the second mask layer; and etching the mark layer along the etching windows to form main overlay mark grooves in the first mark region and dummy overlay mark grooves in the second mark regions simultaneously, wherein the main overlay mark grooves in the first mark region penetrate the mark layer in the direction perpendicular to the substrate, and the dummy overlay mark grooves do not penetrate the mark layer in the second mark regions; filling the main overlay mark grooves with a mark material to form main overlay marks and filling the dummy overlay mark grooves with the mark material to form dummy overlay marks; wherein feature size of the dummy overlay mark is less than or equal to the feature size of the main overlay mark. ### Claim 2 (depends on 1) The method for forming overlay marks according to claim 1, wherein the step of forming a spacer layer covering at least side walls of the first trenches and side walls of the second trenches comprises: depositing a spacer material to form the spacer layer covering the side walls and bottom wall of the first trenches, the side walls and bottom wall of the second trenches, and a top surface of the first mask layer. ### Claim 3 (depends on 2) The method for forming overlay marks according to claim 2, wherein the step of forming a second mask layer comprises: backfilling the first trenches and the second trenches to form the second mask layer, wherein, the second mask layer fills the first trenches and the second trenches and covers the spacer layer on the top surface of the first mask layer, and a thickness of the second mask layer in the first pattern region is less than a thickness of the second mask layer in the second pattern regions. ### Claim 4 (depends on 1) The method for forming overlay marks according to claim 1, wherein the second mark regions are distributed around periphery of the first mark region; and the second pattern regions are distributed around periphery of the first pattern region. ### Claim 5 (depends on 1) The method for forming overlay marks according to claim 1, wherein the main overlay marks are bar patterns extending in a first direction, a plurality of the main overlay marks are arranged in parallel along a second direction perpendicular to the first direction, and both the first direction and the second direction are parallel to the substrate; and the dummy overlay marks are frame patterns surrounding the first mark region, and a plurality of the dummy overlay marks are sequentially nested along a direction of the first mark region to the second mark regions. ### Claim 6 (depends on 1) The method for forming overlay marks according to claim 1, wherein the main overlay marks are bar patterns extending in a first direction, a plurality of the main overlay marks are arranged in parallel along a second direction perpendicular to the first direction, and both the first direction and the second direction are parallel to the substrate; and the dummy overlay marks comprise first dummy patterns and second dummy patterns, a plurality of the first dummy patterns are disposed at two opposite ends of the main overlay marks in the second direction and extend in the first direction, and a plurality of the second dummy patterns are located at two opposite ends of the main overlay marks in the first direction and extend in the second direction. ### Claim 7 (depends on 1) The method for forming overlay marks according to claim 1, wherein the main overlay marks are bar patterns extending in a first direction, a plurality of main overlay marks are arranged in parallel along a second direction perpendicular to the first direction, and both the first direction and the second direction are parallel to the substrate; and the dummy overlay marks comprise a plurality of third dummy patterns, and the plurality of third dummy patterns are arranged in a frame shape around periphery of the first mark region. ### Claim 8 (depends on 1) The method for forming overlay marks according to claim 1, wherein a feature size of the dummy overlay marks is less than or equal to a feature size of the main overlay marks. ### Claim 9 A semiconductor structure, comprising: a substrate; and a mark layer located on the substrate and comprising a first mark region and second mark regions, the second mark regions disposed at ends of the first mark region, the first mark region having main overlay marks, the second mark regions having dummy overlay marks; wherein the main overlay marks penetrate the mark layer and the dummy overlay marks do not penetrate the mark layer; and feature size of the dummy overlay mark is less than or equal to the feature size of the main overlay mark. ### Claim 10 (depends on 9) The semiconductor structure according to claim 9, wherein the second mark regions are distributed around periphery of the first mark region. ### Claim 11 (depends on 9) The semiconductor structure according to claim 9, wherein the main overlay marks are bar patterns extending in a first direction, a plurality of main overlay marks are arranged in parallel along a second direction perpendicular to the first direction, and both the first direction and the second direction are parallel to the substrate; and the dummy overlay marks are frame patterns surrounding the first mark region, and a plurality of dummy overlay marks are sequentially nested along a direction of the first mark region to the second mark regions. ### Claim 12 (depends on 9) The semiconductor structure according to claim 9, wherein the main overlay marks are bar patterns extending in a first direction, a plurality of main overlay marks are arranged in parallel along a second direction perpendicular to the first direction, and both the first direction and the second direction are parallel to the substrate; and the dummy overlay marks comprise first dummy patterns and second dummy patterns, a plurality of first dummy patterns are located at two opposite ends of the main overlay marks in the second direction and extend in the first direction, and a plurality of second dummy patterns are located at two opposite ends of the main overlay marks in the first direction and extend in the second direction. ### Claim 13 (depends on 9) The semiconductor structure according to claim 9, wherein the main overlay marks are bar patterns extending in a first direction, a plurality of main overlay marks are arranged in parallel along a second direction perpendicular to the first direction, and both the first direction and the second direction are parallel to the substrate; and the dummy overlay marks comprise a plurality of third dummy patterns, and the plurality of third dummy patterns are arranged in a frame shape around periphery of the first mark region. ### Claim 14 (depends on 9) The semiconductor structure according to claim 9, wherein in a direction of the first mark region to the second mark regions, a width of the second mark regions is less than a width of the first mark region.