# US 12,014,978 B2 · Semiconductor device and manufacturing method of semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,014,978 B2 - Document ID: US12014978B2 - Status: Granted - Kind: B2 - Application number: 16/917,410 - Filed: 2020-06-30 - Published: 2021-07-08 - Granted: 2024-06-18 - Earliest claimed: 2020-01-03 - Assignees: SK hynix Inc. - Applicants: SK hynix Inc. - Inventors: Sang Yong Lee; Sae Jun Kwon; Sang Min Kim; Jin Taek Park; Sang Hyun Oh - Web page: https://patentgrep.com/patent/US12014978B2 ## CPC - H10W 20/42: Vias, e.g. via plugs - H10B 41/10: characterised by the top-view layout - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/35: with a cell select transistor, e.g. NAND - H10B 43/10: characterised by the top-view layout - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/35: with cell select transistors, e.g. NAND - H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10B 43/40: characterised by the peripheral circuit region - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A semiconductor device includes a line; a source structure on the line; a stack structure on the source structure; a first slit structure penetrating the stack structure; a second slit structure penetrating the stack structure; and a contact plug adjacent to the first slit structure in a first direction. The first slit structure and the second slit structure may be spaced apart from each other by a first distance in a second direction that is perpendicular to the first direction. The contact plug penetrates the source structure, the contact plug being electrically connected to the lower line. The first slit structure and the contact plug may be spaced apart from each other by a second distance in the first direction, and the second distance may be longer than the first distance. ## Claims ### Claim 1 A semiconductor device comprising: a line; a source structure on the line; a contact plug penetrating the source structure; a stack structure on the source structure and the contact plug, wherein a lower surface of the stack structure is in contact with an upper surface of the contact plug; a first slit structure penetrating the stack structure, extending in a first direction, and being adjacent to the contact plug in the first direction; and a second slit structure penetrating the stack structure and extending in the first direction, the second slit structure being adjacent to the first slit structure in a second direction intersecting the first direction and being adjacent to the contact plug in the second direction, wherein the first slit structure and the second slit structure are spaced apart from each other by a first distance in the second direction, the first slit structure and the contact plug are spaced apart from each other by a second distance in the first direction, wherein the second distance is longer than the first distance, and wherein a sidewall of the first slit structure and a sidewall of the contact plug face each other. ### Claim 2 (depends on 1) The semiconductor device of claim 1, wherein the first slit structure includes a first penetration part penetrating the stack structure and a first protrusion part that protrudes inwardly, through the source structure, towards the contact plug from a sidewall of the first penetration part. ### Claim 3 (depends on 2) The semiconductor device of claim 2, wherein the contact plug is spaced apart from the first protrusion part. ### Claim 4 (depends on 1) The semiconductor device of claim 1, wherein the second distance is twice as long as or more than twice as long as the first distance. ### Claim 5 (depends on 1) The semiconductor device of claim 1, further comprising a third slit structure intersecting the first slit structure. ### Claim 6 (depends on 1) The semiconductor device of claim 1, further comprising an isolation layer penetrating the source structure, the isolation layer being located between the second slit structure and the contact plug. ### Claim 7 (depends on 6) The semiconductor device of claim 6, wherein the second slit structure includes a second penetration part penetrating the stack structure and a second protrusion part that protrudes inwardly, through the source structure, towards the isolation layer from a sidewall of the second penetration part. ### Claim 8 (depends on 7) The semiconductor device of claim 7, wherein the isolation layer is located between the second protrusion part and the contact plug. ### Claim 9 (depends on 6) The semiconductor device of claim 6, wherein an edge of the isolation layer and the contact plug are spaced apart from each other by a third distance, the third distance being longer than the first distance. ### Claim 10 (depends on 9) The semiconductor device of claim 9, wherein the third distance is twice as long as or more than twice as long as the first distance. ### Claim 11 (depends on 1) The semiconductor device of claim 1, wherein the contact plug is electrically connected to the source structure, and wherein the contact plug is a discharge contact plug. ### Claim 12 A semiconductor device comprising: a line; a source structure on the line; a contact plug penetrating the source structure; a stack structure on the source structure and the contact plug, wherein a lower surface of the stack structure is in contact with an upper surface of the contact plug; and a first slit structure including a first penetration part penetrating the stack structure and extending in a first direction, and a first protrusion part protruding in the first direction toward the contact plug more than a sidewall of the first penetration part through the source structure, wherein the contact plug is electrically connected to the line and is spaced apart from the first protrusion part, and wherein the first protrusion part is positioned between the first penetration part and the contact plug. ### Claim 13 (depends on 12) The semiconductor device of claim 12, further comprising a second slit structure penetrating the stack structure and extending in the first direction, wherein the first slit structure and the second slit structure are spaced apart from each other by a first distance, the first slit structure and the contact plug are spaced apart from each other by a second distance, and wherein the second distance is longer than the first distance. ### Claim 14 (depends on 12) The semiconductor device of claim 12, further comprising a third slit structure intersecting the first slit structure. ### Claim 15 (depends on 14) The semiconductor device of claim 14, wherein the third slit structure is located between the first slit structure and the contact plug. ### Claim 16 (depends on 12) The semiconductor device of claim 12, further comprising: a second slit structure including a second penetration part penetrating the stack structure and a second protrusion part; and an isolation layer penetrating the source structure, the isolation layer being located between the second slit structure and the contact plug, wherein the second protrusion part protrudes inwardly, through the source structure, towards the isolation layer. ### Claim 17 (depends on 16) The semiconductor device of claim 16, wherein the isolation layer includes an insulating material. ### Claim 18 (depends on 16) The semiconductor device of claim 16, wherein the second protrusion part is in contact with the isolation layer. ### Claim 19 (depends on 12) The semiconductor device of claim 12, wherein the contact plug is electrically connected to the source structure, and wherein the contact plug is a discharge contact plug.