# US 12,014,968 B2 · Semiconductor device, manufacturing method of semiconductor device, and electronic apparatus

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- Number: US 12,014,968 B2
- Document ID: US12014968B2
- Status: Granted
- Kind: B2
- Application number: 17/992,766
- Filed: 2022-11-22
- Published: 2023-03-23
- Granted: 2024-06-18
- Earliest claimed: 2015-11-05
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: Eiichirou Kishida
- Web page: https://patentgrep.com/patent/US12014968B2

## CPC

- H10W 74/129: {forming a chip-scale package [CSP]}
- H10F 39/026: {Wafer-level processing}
- H10F 77/50: Encapsulations or containers (for photovoltaic modules H10F19/80)
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/8506: {Containers}
- H10H 20/852: Encapsulations
- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10W 74/014: {using batch processing}
- H10H 20/036: {of packages}
- H10H 20/0362: {of encapsulations}
- H10P 72/7416: {used during dicing or grinding}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

To prevent deterioration of light incident/emission environment in a semiconductor device in which a transmissive material is laminated on an optical element forming surface via an adhesive. The semiconductor device includes a semiconductor element manufactured by chip size packaging, a transmissive material which is bonded with an adhesive to cover an optical element forming surface of the semiconductor element, and a side surface protective resin which covers an entire side surface where a layer structure of the semiconductor element and the transmissive material is exposed.

## Claims

### Claim 1

A semiconductor device comprising:
a semiconductor element;
a transmissive material configured to be bonded with an adhesive layer to cover an optical element forming surface of the semiconductor element; and
a side surface protective resin configured to cover an entire side surface where a layer structure of the semiconductor element and the transmissive material are exposed, wherein the side surface protective resin has a portion extending upward from an upper surface of the transmissive material, and wherein the side surface protective resin has a rectangular shape in a cross-sectional view.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the side surface protective resin includes a resin having lower moisture permeability and lower water permeability than the adhesive layer.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the side surface protective resin is opaque.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein the side surface protective resin absorbs visible light and ultraviolet light.

### Claim 5 (depends on 4)

The semiconductor device according to claim 4, wherein the side surface protective resin is a black opaque resin.

### Claim 6 (depends on 1)

The semiconductor device according to claim 1, wherein the side surface protective resin is an epoxy resin including carbon.

### Claim 7 (depends on 1)

The semiconductor device according to claim 1, wherein the side surface protective resin is an acrylic resin.

### Claim 8 (depends on 1)

The semiconductor device according to claim 1, wherein the side surface protective resin is a silicone resin.

### Claim 9 (depends on 1)

The semiconductor device according to claim 1, wherein the side surface protective resin has cutting traces made by a cutting tool across an entire surface opposite to a surface facing the semiconductor element and the transmissive material.

### Claim 10 (depends on 1)

The semiconductor device according to claim 1, wherein the adhesive layer covers an entire surface of the optical element forming surface.

### Claim 11

A method of manufacturing a semiconductor device, the method comprising:
a workpiece forming process of bonding a semiconductor substrate on which a plurality of semiconductor elements are formed by chip size packaging to a transmissive material to cover an optical element forming surface of the plurality of semiconductor elements with an adhesive layer to form a workpiece;
a first cutting process of singulating the workpiece fixed to a dicing sheet into a plurality of main structures of the semiconductor device;
a reconnecting process of filling a resin into first grooves which are gaps between the plurality of main structures fixed to the dicing sheet and curing the resin to reconnect the plurality of main structures; and
a second cutting process of forming second grooves narrower than the first grooves in the resin along a substantially center of the first grooves to form a plurality of semiconductor devices while portions of the resin remain on side surfaces of the plurality of main structures, wherein the portions of the resin remaining on the side surfaces have a portion extending upward from an upper surface of the transmissive material, and wherein the portions of the resin remaining on the side surfaces have a rectangular shape in a cross-sectional view.

### Claim 12 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the resin remaining of the side surfaces of the plurality of main structures has a lower moisture permeability and a lower water permeability than the adhesive layer.

### Claim 13 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the resin remaining of the side surfaces of the plurality of main structures is opaque.

### Claim 14 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the resin remaining of the side surfaces of the plurality of main structures absorbs visible light and ultraviolet light.

### Claim 15 (depends on 14)

The method of manufacturing the semiconductor device according to claim 14, wherein the resin remaining of the side surfaces of the plurality of main structures is a black opaque resin.

### Claim 16 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the resin remaining of the side surfaces of the plurality of main structures is an epoxy resin including carbon.

### Claim 17 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the resin remaining of the side surfaces of the plurality of main structures is an acrylic resin.

### Claim 18 (depends on 11)

The method of manufacturing the semiconductor device according to claim 11, wherein the resin remaining of the side surfaces of the plurality of main structures is a silicone resin.

### Claim 19

An electronic apparatus comprising:
a semiconductor device including:
a semiconductor element;
a transmissive material bonded with an adhesive layer to cover an optical element forming surface of the semiconductor element; and
a side surface protective resin which covers an entire side surface where a layer structure of the semiconductor element and the transmissive material are exposed, wherein the side surface protective resin has a portion extending upward from an upper surface of the transmissive material, and wherein the side surface protective resin has a rectangular shape in a cross-sectional view.

### Claim 20 (depends on 19)

The electronic apparatus according to claim 19, wherein the side surface protective resin includes a resin having a lower moisture permeability and a lower water permeability than the adhesive layer, and wherein the side surface protective resin is opaque.
