# US 12,014,948 B2 · Semiconductor heat treatment member and manufacturing method thereof

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- Number: US 12,014,948 B2
- Document ID: US12014948B2
- Status: Granted
- Kind: B2
- Application number: 17/552,170
- Filed: 2021-12-15
- Published: 2022-06-30
- Granted: 2024-06-18
- Earliest claimed: 2020-12-25
- Assignees: Coorstek Gk
- Applicants: CoorsTek KK
- Inventors: Sayaka Togashi; Nobuyuki Munakata; Kenji Suzuki
- Web page: https://patentgrep.com/patent/US12014948B2

## CPC

- H10P 72/7616: {characterised by a coating, a hardness or a material}
- C01B 32/956: Silicon carbide
- C01B 33/12: Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C23C 16/4581: {characterised by material of construction or surface finish of the means for supporting the substrate}
- C30B 25/12: Substrate holders or susceptors
- C01P 2006/90: Other properties not specified above
- H10P 72/0436: {mainly by radiation}
- H10P 72/7611: {characterised by edge profile or support profile}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

The present invention relates to a semiconductor heat treatment member for holding a semiconductor wafer, including a base member a surface of which is covered with an oxide film, the base member including a silicon carbide, in which a surface of a wafer holding portion to be in contact with a semiconductor wafer has an arithmetic average roughness Ra of smaller than or equal to 0.3 μm and an element average length RSm of shorter than or equal to 40 μm.

## Claims

### Claim 1

A semiconductor heat treatment member for holding a semiconductor wafer, comprising a base member a surface of which is covered with an oxide film, the base member comprising silicon carbide, wherein a surface of a wafer holding portion to be in contact with a semiconductor wafer has an arithmetic average roughness Ra of smaller than or equal to 0.3 μm and an element average length RSm of shorter than or equal to 40 μm.

### Claim 2 (depends on 1)

The semiconductor heat treatment member according to claim 1, wherein a difference ΔRa between a maximum value and a minimum value of values of the arithmetic average roughness Ra of the surface of the wafer holding portion is smaller than or equal to 0.15 μm.

### Claim 3 (depends on 1)

The semiconductor heat treatment member according to claim 1, wherein the wafer holding portion has a thickness of smaller than or equal to 1 mm.

### Claim 4 (depends on 1)

The semiconductor heat treatment member according to claim 1, wherein the oxide film formed on the surface of the wafer holding portion has a thickness of larger than or equal to 0.3 μm and smaller than or equal to 3 μm.

### Claim 5 (depends on 1)

A manufacturing method of the semiconductor heat treatment member according to claim 1, the method comprising:
obtaining a ring-shaped base member comprising the silicon carbide;
processing a surface of the base member using a diamond whetstone so that the arithmetic average roughness Ra becomes smaller than or equal to 0.3 μm and the element average length RSm becomes shorter than or equal to 40 μm; and
forming the oxide film on the surface of the base member at a thickness of larger than or equal to 0.3 μm and smaller than or equal to 3 μm by heating the base member in an oxidizing atmosphere.