# US 12,014,939 B2 · Device for manufacturing semiconductor substrate comprising temperature gradient inversion means and method for manufacturing semiconductor substrate

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- Number: US 12,014,939 B2
- Document ID: US12014939B2
- Status: Granted
- Kind: B2
- Application number: 17/600,087
- Filed: 2020-03-25
- Published: 2022-06-16
- Granted: 2024-06-18
- Earliest claimed: 2019-03-29
- Assignees: Kwansei Gakuin Educational Foundation; Toyota Tsusho Corporation
- Applicants: Kwansei Gakuin Educational Foundation; Toyota Tsusho Corporation
- Inventors: Tadaaki Kaneko
- Web page: https://patentgrep.com/patent/US12014939B2

## CPC

- C30B 23/06: Heating of the deposition chamber, the substrate or the materials to be evaporated
- H10P 72/0432: {mainly by conduction}
- C30B 29/36: Carbides
- H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering
- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10P 72/0602: {Temperature monitoring}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Provided are a method for etching and growing a semiconductor substrate in the same device system, and a device therefor. The method for manufacturing a semiconductor substrate includes a first heating step of heating a heat treatment space which contains a semiconductor substrate and a transmission/reception body that transports atoms between the semiconductor substrate and the transmission/reception body such that a temperature gradient is formed between the semiconductor substrate and the transmission/reception body, and a second heating step of heating the same with the temperature gradient being vertically inverted.

## Claims

### Claim 1

A method for manufacturing a SiC semiconductor substrate, the method comprising:
a first heating process of heating a heat treatment space accommodating a SiC semiconductor substrate and a release and reception body that transports atoms to and from the SiC semiconductor substrate in a manner that a temperature gradient is formed between the SiC semiconductor substrate and the release and reception body;
a second heating process of reversing the temperature gradient between the SiC semiconductor substrate and the release and reception body and performing heating; and,
wherein the first heating process and the second heating process comprising heating the SiC semiconductor substrate in a main container made of a material containing polycrystalline SiC.

### Claim 2 (depends on 1)

The method for manufacturing a SiC semiconductor substrate according to claim 1, wherein the first heating process and the second heating process are performed in a semi-closed space.

### Claim 3 (depends on 1)

The method for manufacturing a SiC semiconductor substrate according to claim 1, wherein the first heating process and the second heating process are performed under an atmosphere containing an atomic species constituting the SiC semiconductor substrate.

### Claim 4

A device for manufacturing a semiconductor substrate comprising:
a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate;
a heating furnace including a heating chamber that accommodates the main container, and a heater that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body;
a temperature gradient inversion means that inverts high and low of the temperature gradient,
wherein the temperature gradient inversion means is one or more selected from a temperature control means that controls a temperature in the main container in the heater, a main container control means that controls a position or orientation of the main container, or a heat radiation means that radiates heat in the heating chamber to the outside of the heating chamber,
wherein the temperature control means is a means that controls a heat generation amount of the heater, or a means that controls a position or orientation of the heater;
wherein the main container control means is a moving means to reverse the high and low temperature gradient between the semiconductor substrate and the release and reception body by moving the position of the main container in the heating furnace, or a rotation mechanism to reverse the high and low temperature gradient between the semiconductor substrate and the release and reception body by rotating the main container; and
wherein the heat radiation means is an opening and closing part to reverse the high and low temperature gradient between the semiconductor substrate and the release and reception body by controlling the open and close state.

### Claim 5 (depends on 4)

The device for manufacturing a semiconductor substrate according to claim 4, comprising, as the temperature gradient inversion means, two or more types of temperature gradient inversion means selected from the temperature control means, the main container control means, and the heat radiation means.

### Claim 6 (depends on 4)

The device for manufacturing a semiconductor substrate according to claim 4, wherein the main container is made of a material containing a polycrystalline SiC an atomic species constituting the semiconductor substrate.

### Claim 7 (depends on 4)

The device for manufacturing a semiconductor substrate according to claim 4, further comprising a high melting point container that accommodates the main container.

### Claim 8

A device for manufacturing a semiconductor substrate comprising:
a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate; and
a heating furnace including a heating chamber that accommodates the main container, and a heater that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body,
wherein at least a first heating chamber and a second heating chamber are provided as the heating chamber,
high and low of a temperature gradient of the second heating chamber is opposite to high and low of a temperature gradient of the first heating chamber, and
wherein the first heating chamber and the second heating chamber are adjacent to each other via the heater.

### Claim 9

A device for manufacturing a semiconductor substrate comprising:
a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate; and
a heating furnace including a heating chamber that accommodates the main container, and a heating means that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body,
wherein at least a first heating chamber and a second heating chamber are provided as the heating chamber, and
high and low of a temperature gradient of the second heating chamber is opposite to high and low of a temperature gradient of the first heating chamber,
wherein the first heating chamber and the second heating chamber each include an independent heating means.

### Claim 10

A device for manufacturing a semiconductor substrate comprising:
a main container that accommodates a semiconductor substrate and a release and reception body that transports atoms to and from the semiconductor substrate; and
a heating furnace including a heating chamber that accommodates the main container, and a heating means that performs heating in a manner to form a temperature gradient between the semiconductor substrate and the release and reception body,
wherein at least a first heating chamber and a second heating chamber are provided as the heating chamber, and
high and low of a temperature gradient of the second heating chamber is opposite to high and low of a temperature gradient of the first heating chamber,
wherein heat insulating materials having different thicknesses are respectively provided in the first heating chamber and the second heating chamber.