# US 12,014,919 B2 · Dielectric layer, interconnection structure using the same, and manufacturing method thereof

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- Number: US 12,014,919 B2
- Document ID: US12014919B2
- Status: Granted
- Kind: B2
- Application number: 17/199,066
- Filed: 2021-03-11
- Published: 2021-07-01
- Granted: 2024-06-18
- Earliest claimed: 2018-08-14
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Yi-Chen Ho; You-Hua Chou; Yen-Hao Liao; Che-Lun Chang; Zhen-Cheng Wu
- Web page: https://patentgrep.com/patent/US12014919B2

## CPC

- H10P 14/665: {Porous materials}
- H10P 14/6922: {the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- H10P 50/287: {by chemical means}
- H10W 20/072: {of dielectric parts comprising air gaps}
- H10W 20/46: comprising air gaps
- H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants
- H10W 20/48: Insulating materials thereof
- H10P 14/6336: {in the presence of a plasma [PECVD]}
- H10P 14/6502: {of treatments performed before formation of the materials}
- H10P 14/6538: {by exposure to UV light}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10P 14/683: {carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC}
- H10W 20/033: {in openings in dielectrics}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/071: {of dielectric parts thereof}
- H10W 20/084: {for dual-damascene structures}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A structure includes a first dielectric film and a second dielectric film. The second dielectric film is formed on and in contact with the first dielectric film, in which a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.

## Claims

### Claim 1

A structure, comprising:
a first dielectric film;
a second dielectric film on and in contact with the first dielectric film, wherein a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore; and
a third dielectric film on and in contact with the second dielectric film, wherein a second pore is formed between the second dielectric film and the third dielectric film.

### Claim 2 (depends on 1)

The structure of claim 1, wherein a thickness of the second dielectric film is smaller than the diameter of the first pore.

### Claim 3 (depends on 1)

The structure of claim 1, wherein the diameter of the first pore is in a range from about 3 nm to about 10 nm.

### Claim 4 (depends on 1)

The structure of claim 1, wherein the first dielectric film is a monolayer.

### Claim 5 (depends on 1)

The structure of claim 1, wherein the second dielectric film is a monolayer.

### Claim 6 (depends on 1)

The structure of claim 1, wherein the third dielectric film is a monolayer.

### Claim 7 (depends on 1)

The structure of claim 1, wherein the first and the second dielectric films have the same material.

### Claim 8 (depends on 1)

The structure of claim 1, wherein the first and the second dielectric films have different materials.

### Claim 9 (depends on 1)

The structure of claim 1, wherein the first and the second dielectric films comprise carbon.

### Claim 10 (depends on 1)

The structure of claim 1, wherein the third dielectric film comprises carbon.

### Claim 11

A structure, comprising:
a filling material;
a dielectric layer laterally surrounding the filling material;
an etch stop layer over the dielectric layer and the filling material;
a first dielectric monolayer extending along a top surface of the etch stop layer;
a second dielectric monolayer over the first dielectric monolayer, wherein a first pore is formed between the first and second dielectric monolayers and has a diameter greater than a thickness of the second dielectric monolayer; and
a conductive material extending through the first and second dielectric monolayers and landing on the filling material.

### Claim 12 (depends on 11)

The dielectric layer of claim 11, wherein the diameter of the first pore is greater than a thickness of the first dielectric monolayer.

### Claim 13 (depends on 11)

The dielectric layer of claim 11, wherein the second dielectric monolayer is in contact with the first dielectric monolayer.

### Claim 14 (depends on 11)

The dielectric layer of claim 11, wherein the first and second dielectric monolayers are made of silicon oxide.

### Claim 15 (depends on 11)

The dielectric layer of claim 11, wherein the first and second dielectric monolayers comprise nitride.

### Claim 16 (depends on 11)

The dielectric layer of claim 11, further comprising a third dielectric monolayer over the second dielectric monolayer, wherein a second pore is formed between the second and third dielectric monolayers and has a diameter greater than the thickness of the second dielectric monolayer.

### Claim 17

A structure, comprising:
a substrate; and
a dielectric layer over the substrate and comprising:
a first dielectric film having a thickness in a range from 0.05 nm to about 0.1 nm;
a second dielectric film over and in contact with the first dielectric film; and
a third dielectric film over and in contact with the second dielectric film, wherein the dielectric layer has a volume percentage porosity in a range from about 10% to about 75%.

### Claim 18 (depends on 17)

The structure of claim 17, wherein a pore is formed between the first and second dielectric films and has a diameter greater than a thickness of the first dielectric film.

### Claim 19 (depends on 17)

The structure of claim 17, wherein the dielectric layer has a dielectric constant lower than about 2.4.

### Claim 20 (depends on 17)

The structure of claim 17, wherein the dielectric layer is made of silicon oxide.