# US 12,014,905 B2 · Apparatus and method fabricating semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,014,905 B2 - Document ID: US12014905B2 - Status: Granted - Kind: B2 - Application number: 17/380,806 - Filed: 2021-07-20 - Published: 2022-05-26 - Granted: 2024-06-18 - Earliest claimed: 2020-11-24 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Nam Kyun Kim; Tae-Sun Shin; Deokjin Kwon; Donghyeon Na; Seungbo Shim; Sungyong Lim; Minjoon Kim; Jin Young Bang; Bongju Lee; Jinseok Lee; Sungil Cho; Chungho Cho - Web page: https://patentgrep.com/patent/US12014905B2 ## CPC - H01J 37/32669: {Particular magnets or magnet arrangements for controlling the discharge} - H01J 37/32146: {Amplitude modulation, includes pulsing} - H01J 37/3244: {Gas supply means} - H01J 37/3266: {Magnetic control means} - H01J 37/32715: {Workpiece holder} - H10P 34/00: Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices - H10P 72/72: using electrostatic chucks - H01J 2237/327: Arrangements for generating the plasma - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius. ## Claims ### Claim 1 A method of fabricating a semiconductor device, the method comprising: seating a substrate having a substrate radius on an electrostatic chuck; applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, wherein the first radio-frequency power is provided by a first radio-frequency power supply; and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the second radio-frequency power is applied to the magnet by a second radio-frequency power supply including a power source generating a source voltage, and a modulator connected between the power source and the magnet, and wherein the modulator is configured to generate a pulse through modulation of the source voltage, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius, wherein the modulator comprises: a pulse generator configured to generate the pulse; and a peak generator connected to the pulse generator and configured to generate a peak of the pulse, wherein the pulse generator comprises: first delay cells connected in series to the power source; and a first gate driver connected to the first delay cells to provide a trigger signal to the first delay cells, and wherein the peak generator comprises: an additional power source; second delay cells connected in series to the additional power source, and a second gate driver connected to the first gate driver and the second delay of cells to provide the trigger signal to the second delay of cells. ### Claim 2 (depends on 1) The method of claim 1, wherein the inner radius of the magnet is about one-third of the substrate radius. ### Claim 3 (depends on 2) The method of claim 2, wherein the substrate radius is about 15 cm, and the inner radius of the magnet is about 5 cm. ### Claim 4 (depends on 2) The method of claim 2, wherein the substrate includes a center portion having a first radial width, an intermediate portion having a second radial width and an edge portion having a third radial width, each of the first radial width, the second radial width and the third radial width is the same, and a sum of the first radial width, the second radial width and the third radial width is equal to the substrate radius. ### Claim 5 (depends on 4) The method of claim 4, wherein the inner radius of the magnet is equal to each of the first radial width, the second radial width and the third radial width. ### Claim 6 (depends on 1) The method of claim 1, wherein the magnet has a width and a thickness, each ranging from about one-fifteenth to about one-fifth of the substrate radius. ### Claim 7 (depends on 1) The method of claim 1, wherein the magnet has an outer radius ranging from about two-fifths to about four-fifths of the substrate radius. ### Claim 8 (depends on 1) The method of claim 1, wherein the magnet is disposed at a vertical height above the substrate about four-thirds of the substrate radius. ### Claim 9 (depends on 1) The method of claim 1, wherein a phase of the second radio-frequency power leads a phase of the first radio-frequency power. ### Claim 10 (depends on 1) The method of claim 1, wherein the second radio-frequency power induces intensity of the magnetic field in a square wave form. ### Claim 11 A method of fabricating a semiconductor device, the method comprising: seating a substrate having a substrate radius on an electrostatic chuck having a chuck radius; applying a first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, wherein the first radio-frequency power is provided by a first radio-frequency power supply; and generating a magnetic field in the region at least above the electrostatic chuck using a magnet disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the second radio-frequency power is applied to the magnet by a second radio-frequency power supply including a power source generating a source voltage, and a modulator connected between the power source and the magnet, and wherein the modulator is configured to generate a pulse through modulation of the source voltage, wherein the substrate includes a center portion having a first radial width, an intermediate portion having a second radial width, and an edge portion having a third radial width, the intermediate portion is disposed between the center portion and the edge portion, and the magnet has an inner radius equal to the second radial width, wherein the modulator comprises: a pulse generator configured to generate the pulse, and a peak generator connected to the pulse generator and configured to generate a peak of the pulse, wherein the pulse generator comprises: first delay cells connected in series to the power source; and a first gate driver connected to the first delay cells to provide a trigger signal to the first delay cells, and wherein the peak generator comprises: an additional power source; second delay cells connected in series to the additional power source; and a second gate driver connected to the first gate driver and the second delay cells to provide the trigger signal to the second delay cells. ### Claim 12 (depends on 11) The method of claim 11, wherein the inner radius of the magnet is about 5 cm and the substrate radius is about 15 cm, or the inner radius of the magnet is about 3 cm and the substrate radius is about 12 cm. ### Claim 13 (depends on 11) The method of claim 11, wherein the magnet is a ring-shaped electromagnet, and the generating of the magnetic field in the region at least above the electrostatic chuck includes applying a second radio-frequency power to the magnet. ### Claim 14 (depends on 13) The method of claim 13, wherein a phase of the second radio-frequency power leads a phase of the first radio-frequency power. ### Claim 15 (depends on 13) The method of claim 13, wherein the second radio-frequency power induces intensity of the magnetic field in a square wave form. ### Claim 16 An apparatus fabricating a semiconductor device, the apparatus comprising: a chamber; an electrostatic chuck having a chuck radius and disposed in a lower portion of the chamber, wherein the electrostatic chuck is configured to seat a substrate; a shower head disposed in an upper portion of the chamber above the electrostatic chuck and configured to provide gas into a region at least above the electrostatic chuck; and a magnet disposed on the shower head and configured to induce a magnetic field in the region at least above the electrostatic chuck; a first radio-frequency power supply configured to apply first power to the electrostatic chuck to induce plasma in the region at least above the electrostatic chuck, and a second radio-frequency power supply configured to apply second power to the magnet to generate a magnetic field in the region at least above the electrostatic chuck, the second radio-frequency power supply including a power source generating a source voltage, and a modulator connected between the power source and the magnet, wherein the modulator is configured to generate a pulse through modulation of the source voltage, wherein the magnet has a ring shape including an inner radius ranging from between about one-half to one-fourth of the chuck radius, wherein the modulator comprises: a pulse generator configured to generate the pulse; and a peak generator connected to the pulse generator and configured to generate a peak of the pulse, wherein the pulse generator comprises: first delay cells connected in series to the power source; and a first gate driver connected to the first delay cells to provide a trigger signal to the first delay cells, and wherein the peak generator comprises: an additional power source; second delay cells connected in series to the additional power source; and a second gate driver connected to the first gate driver and the second delay of cells to provide the trigger signal to the second delay of cells.