Resist underlayer film material, patterning process, and method for forming resist underlayer film

A resist underlayer film material used in a multilayer resist method, comprising:

• (A) at least one compound shown by the following general formula (1);
• and
• (B) an organic solvent,
• wherein X independently represents a monovalent organic group shown by the following general formula (2);
• W represents an organic group with a valency of “n” having 2 to 60 carbon atoms, and containing an “m” number of partial structures each independently shown by the following general formula (4) or (5);
• and “m” and “n” each represent an integer of 1 to 10,
• wherein a broken line represents a bonding arm;
• Z represents an aromatic group with a valency of (k+1) having 6 to 20 carbon atoms;
• A represents a single bond or —O—(CH2)p—;
• “k” represents an integer of 1 to 5;
• and “p” represents an integer of 1 to 10,
• wherein broken lines represent bonding arms;
• R01 represents a hydrogen atom or a monovalent alkyl group having 1 to 10 carbon atoms;
• and R02 represents a hydrogen atom or a monovalent alkyl group having 1 to 20 carbo atoms.