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US 12,011,738 B2Granted
Substrate processing method and ionic liquid
AssigneeTokyo Electron Limited
InventorsTakeo Nakano, Hirokazu Ueda, Mitsuaki Iwashita, Naoki Umeshita, Ryuichi Asako, Kenichi Uki
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Abstract
A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.
Claims18
A substrate processing method comprising:
- forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate;
- and
- removing the film of the ionic liquid formed on the surface of the substrate,
- wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms,
- wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom, and
- wherein the removing the film of the ionic liquid includes performing a supercritical processing on the substrate having the film of the ionic liquid formed on the substrate.
3 more elements
A substrate processing method comprising:
- forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate,
- wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms,
- wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom, and
- wherein a surface tension of the ionic liquid at 25 degrees C. is 30 mN/m or less.
1 more element
Dependencies are inferred from the claim text.