# US 12,010,929 B2 · Memory device and manufacturing method therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,010,929 B2 - Document ID: US12010929B2 - Status: Granted - Kind: B2 - Application number: 17/316,794 - Filed: 2021-05-11 - Published: 2021-09-02 - Granted: 2024-06-11 - Earliest claimed: 2018-12-26 - Assignees: Industry-University Cooperation Foundation Hanyang University Erica Campus - Applicants: Industry-University Cooperation Foundation Hanyang University Erica Campus - Inventors: Tae Joo Park; Dae Woong Kim; Tae Jun Seok; Hye Rim Kim - Web page: https://patentgrep.com/patent/US12010929B2 ## CPC - H10N 70/245: {the species being metal cations, e.g. programmable metallization cells} - C23C 16/40: Oxides - C23C 16/403: {of aluminium, magnesium or beryllium} - C23C 16/45529: {specially adapted for making a layer stack of alternating different compositions or gradient compositions} - C23C 16/45553: {characterized by the use of precursors specially adapted for ALD} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - G11C 13/0011: {comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]} - G11C 13/0069: {Writing or programming circuits or methods} - H10N 70/023: {by chemical vapor deposition, e.g. MOCVD, ALD} - H10N 70/826: {adapted for essentially vertical current flow, e.g. sandwich or pillar type devices} - H10N 70/8836: {Complex metal oxides, e.g. perovskites, spinels} - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract A memory device is provided. The memory device may comprise: a first electrode; a resistance change layer placed on the first electrode and containing an alkali metal and a transition metal; and a second electrode placed on the resistance change layer, wherein the content of the alkali metal in the resistance change layer ranges from 40 at % (exclusive) to 88 at % (exclusive). ## Claims ### Claim 1 A memory device comprising: a first electrode; a resistance change layer disposed on the first electrode and including lithium, aluminum, and oxygen; and a second electrode disposed on the resistance change layer, wherein the resistance change layer has a lithium content ratio Li/(Li+Al) that is more than 40 at % and less than 60 at %. ### Claim 2 (depends on 1) The memory device of claim 1, wherein the lithium content ratio Li/(Li+Al) is more than 50 at %. ### Claim 3 (depends on 1) The memory device of claim 1, wherein the resistance change layer includes a plurality of first resistance change layers that include lithium, and that are alternatively disposed with a plurality of second resistance change layers that include aluminum. ### Claim 4 (depends on 1) A CBRAM comprising a memory device according to claim 1. ### Claim 5 A method of manufacturing a memory device, the method comprising: forming a first electrode on a substrate; performing a first unit process for reacting a first precursor that includes lithium with a first reaction source that includes oxygen; performing a second unit process for reacting a second precursor that includes aluminum with a second reaction source that includes oxygen, wherein performing the first unit process and the second unit process result in formation of a resistance change layer that includes lithium, aluminum, and oxygen on the first electrode; and forming a second electrode on the resistance change layer, wherein the first unit process and the second unit process are separately and repeatedly performed a plurality of times, in which a repetition ratio between the first unit process and the second unit process is controlled, thereby controlling a lithium content ratio Li/(Li+Al) in the resistance change layer. ### Claim 6 (depends on 5) The method of claim 5, wherein the repetition ratio between the first unit process and the second unit process is controlled such that a repetition rate of the first unit process is more than 4 times and less than 16 times compared to a repetition rate of the second unit process. ### Claim 7 (depends on 5) The method of claim 5, wherein the first unit process includes providing the first precursor on the first electrode and providing the first reaction source on the first electrode provided with the first precursor, and the second unit process includes providing the second precursor on the first electrode and providing the second reaction source on the first electrode provided with the second precursor. ### Claim 8 (depends on 5) The method of claim 5, wherein temperatures of the first unit process and the second unit process are controlled such that the lithium content ratio Li/(Li+Al) in the resistance change layer is more than 50 at % and less than 88 at %. ### Claim 9 (depends on 8) The method of claim 8, wherein the first unit process and the second unit process are performed at a temperature of 90° C. ### Claim 10 (depends on 5) The method of claim 5, wherein the first precursor includes lithium bis(trimethylsilyl)amide (LiHMDS) or lithium tert-butoxide (LiOtBu), and the second precursor includes trimethylaluminium (TMA). ### Claim 11 (depends on 5) The method of claim 5, wherein the first reaction source and the second reaction source are identical to each other, and the first reaction source and the second reaction source include H2O or ozone (O3). ### Claim 12 A memory device comprising: a first electrode; a resistance change layer disposed on the first electrode and comprising lithium, titanium, and oxygen; and a second electrode disposed on the resistance change layer, wherein the resistance change layer has a lithium content ratio Li/(Li+Ti) that is more than 37 at % and less than 72 at %, and wherein the resistance change layer comprises a plurality of first resistance change layers that comprise lithium, and that are alternatively disposed with a plurality of second resistance change layers that comprise titanium. ### Claim 13 (depends on 12) The memory device of claim 12, wherein the lithium content ratio Li/(Li+Ti) is less than 46 at %. ### Claim 14 A method of manufacturing a memory device, the method comprising: forming a first electrode on a substrate; performing a first unit process for reacting a first precursor that comprises lithium with a first reaction source that comprises oxygen; performing a second unit process for reacting a second precursor that comprises titanium with a second reaction source that comprises oxygen, wherein performing the first unit process and the second unit process result in formation of a resistance change layer that comprises lithium, titanium, and oxygen on the first electrode; and forming a second electrode on the resistance change layer, wherein the first unit process and the second unit process are separately and repeatedly performed a plurality of times, in which a repetition ratio between the first unit process and the second unit process is controlled, thereby controlling a lithium content ratio Li/(Li+Ti) in the resistance change layer. ### Claim 15 (depends on 14) The method of claim 14, wherein the first precursor comprises lithium bis(trimethylsilyl)amide (LiHMDS) or lithium tert-butoxide (LiOtBu), and the second precursor comprises titanium isopropoxide (TTIP). ### Claim 16 (depends on 14) The method of claim 14, wherein the repetition ratio between the first unit process and the second unit process is controlled such that a repetition rate of the first unit process is more than 4 times and less than 16 times compared to a repetition rate of the second unit process. ### Claim 17 (depends on 14) The method of claim 14, wherein the first reaction source and the second reaction source are identical to each other, and the first reaction source and the second reaction source comprise H2O or ozone (O3). ### Claim 18 (depends on 14) The method of claim 14, wherein: the first unit process comprises providing the first precursor on the first electrode and providing the first reaction source on the first electrode provided with the first precursor, and the second unit process comprises providing the second precursor on the first electrode and providing the second reaction source on the first electrode provided with the second precursor.