# US 12,010,887 B2 · Semiconductor unit, method of manufacturing the same, and electronic apparatus

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- Number: US 12,010,887 B2
- Document ID: US12010887B2
- Status: Granted
- Kind: B2
- Application number: 17/682,007
- Filed: 2022-02-28
- Published: 2022-06-09
- Granted: 2024-06-11
- Earliest claimed: 2012-02-06
- Assignees: Sony Group Corporation
- Applicants: Sony Group Corporation
- Inventors: Hironobu Abe
- Web page: https://patentgrep.com/patent/US12010887B2

## CPC

- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- G02F 1/13452: {Conductors connecting driver circuitry and terminals of panels}
- H05K 1/0271: {Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion}
- H05K 3/36: Assembling printed circuits with other printed circuits {(H05K7/142 takes precedence)}
- H05K 3/361: {Assembling flexible printed circuits with other printed circuits}
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10K 77/111: {Flexible substrates}
- H10W 72/00: Interconnections or connectors in packages
- H05K 3/323: {by applying an anisotropic conductive adhesive layer over an array of pads}
- H05K 2201/10136: Liquid Crystal display [LCD]
- H10D 86/411: {characterised by materials, geometry or structure of the substrates}
- H10D 86/60: wherein the TFTs are in active matrices
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

There are provided a semiconductor unit that prevents connection failure caused by a wiring substrate to improve reliability, a method of manufacturing the semiconductor unit, and an electronic apparatus including the semiconductor unit. The semiconductor unit includes: a device substrate including a functional device and an electrode; a first wiring substrate electrically connected to the functional device through the electrode; and a second wiring substrate electrically connected to the functional device through the first wiring substrate.

## Claims

### Claim 1

A semiconductor unit, comprising:
a device substrate including a functional device and an electrode;
a first wiring substrate electrically connected to the functional device through the electrode; and
a second wiring substrate electrically connected to the functional device through the first wiring substrate, wherein the second wiring substrate is connected to a first drive circuit transmitting external signals.

### Claim 2 (depends on 1)

The semiconductor unit according to claim 1, wherein
the electrode of the device substrate is in contact with a first wiring of the first wiring substrate, and
the first wiring is in contact with a second wiring of the second wiring substrate.

### Claim 3 (depends on 1)

The semiconductor unit according to claim 1, wherein
the functional device and the electrode are provided on a first surface of the device substrate, and
the first wiring substrate is provided on a first surface side of the device substrate, and the second wiring substrate is provided on a second surface side opposing to the first surface.

### Claim 4 (depends on 1)

The semiconductor unit according to claim 1, wherein the first wiring substrate and the second wiring substrate are in contact with each other on an outside of the device substrate.

### Claim 5 (depends on 1)

The semiconductor unit according to claim 1, wherein each of the first wiring substrate and the second wiring substrate is configured of a flexible material.

### Claim 6 (depends on 1)

The semiconductor unit according to claim 1, wherein
a second wiring is provided on both of a first surface and a second surface of the second wiring substrate, the first surface facing a first wiring of the first wiring substrate, and
the first drive circuit is connected to the second surface of the second wiring substrate.

### Claim 7 (depends on 6)

The semiconductor unit according to claim 6, wherein the second wiring on the first surface of the second wiring substrate is connected to the second wiring on the second surface of the second wiring substrate through through-holes provided on the second wiring substrate.

### Claim 8 (depends on 1)

The semiconductor unit according to claim 1, wherein
a second drive circuit is provided on one side of the device substrate, the second drive circuit driving the functional device,
a region close to a first end of the second wiring substrate is in contact with the first wiring substrate on an outside of the device substrate, and a region close to a second end of the second wiring substrate extends to the one side of the device substrate provided with the second drive circuit, and
the first drive circuit is connected to the region close to the second end of the second wiring substrate.

### Claim 9 (depends on 1)

The semiconductor unit according to claim 1, wherein the functional device is a display device.

### Claim 10 (depends on 1)

The semiconductor unit according to claim 1, wherein the first drive circuit is a driver integrated circuit (IC).

### Claim 11

A semiconductor unit, comprising:
a device substrate including a functional device and an electrode;
a first wiring substrate electrically connected to the functional device through the electrode; and
a second wiring substrate electrically connected to the functional device through the first wiring substrate, wherein the device substrate is configured of a flexible material.

### Claim 12 (depends on 11)

The semiconductor unit according to claim 11, wherein
the electrode of the device substrate is in contact with a first wiring of the first wiring substrate, and
the first wiring is in contact with a second wiring of the second wiring substrate.

### Claim 13 (depends on 11)

The semiconductor unit according to claim 11, wherein
the functional device and the electrode are provided on a first surface of the device substrate, and
the first wiring substrate is provided on a first surface side of the device substrate, and the second wiring substrate is provided on a second surface side opposing to the first surface.

### Claim 14 (depends on 11)

The semiconductor unit according to claim 11, wherein the first wiring substrate and the second wiring substrate are in contact with each other on an outside of the device substrate.

### Claim 15

A semiconductor unit, comprising:
a device substrate including a functional device and an electrode;
a first wiring substrate electrically connected to the functional device through the electrode; and
a second wiring substrate electrically connected to the functional device through the first wiring substrate,
wherein each of the first wiring substrate and the second wiring substrate is configured of a flexible material,
wherein the device substrate includes a first surface, a second surface, and a third surface, the second surface opposing to the first surface, the third surface connecting the first surface and the second surface,
wherein the first wiring substrate is provided from the first surface to the third surface of the device substrate and has a protective portion partially covering the first wiring substrate, and
wherein the protective portion faces a corner configured of the first surface and the third surface of the device substrate.

### Claim 16

A semiconductor unit, comprising:
a device substrate including a functional device and an electrode;
a first wiring substrate electrically connected to the functional device through the electrode; and
a second wiring substrate electrically connected to the functional device through the first wiring substrate,
wherein end surfaces of the first wiring substrate and the second wiring substrate are aligned.

### Claim 17

A method of manufacturing a semiconductor unit, the method comprising:
forming a device substrate including a functional device and an electrode, the electrode being electrically connected to the functional device; and
electrically connecting a first wiring substrate to the electrode and to a second wiring substrate, wherein the first wiring substrate is electrically connected to the electrode and to the second wiring substrate after a thick film portion is provided an end of one or both of the second wiring substrate and the first wiring substrate.

### Claim 18 (depends on 17)

The method according to claim 17, wherein the thick film portion is cut out after the first wiring substrate is electrically connected to the electrode and to the second wiring substrate.

### Claim 19

A method of manufacturing a semiconductor unit, the method comprising:
forming a device substrate including a functional device and an electrode, the electrode being electrically connected to the functional device; and
electrically connecting a first wiring substrate to the electrode and to a second wiring substrate, wherein the electrical connection between the first wiring substrate and the electrode and the electrical connection between the first wiring substrate and the second wiring substrate are performed at a same time.

### Claim 20

A method of manufacturing a semiconductor unit, the method comprising:
forming a device substrate including a functional device and an electrode, wherein the electrode is electrically connected to the functional device; and
electrically connecting a first wiring substrate to the electrode and to a second wiring substrate, wherein the electrical connection between the first wiring substrate and the second wiring substrate is performed after the electrical connection between the first wiring substrate and the electrode is performed.
