# US 12,010,863 B2 · Display device

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- Number: US 12,010,863 B2
- Document ID: US12010863B2
- Status: Granted
- Kind: B2
- Application number: 17/846,253
- Filed: 2022-06-22
- Published: 2022-10-06
- Granted: 2024-06-11
- Earliest claimed: 2016-09-01
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: Chandra Lius; Yu-Sheng Tsai
- Web page: https://patentgrep.com/patent/US12010863B2

## CPC

- H10K 59/123: Connection of the pixel electrodes to the thin film transistors [TFT]
- H10K 10/46: Field-effect transistors, e.g. organic thin-film transistors [OTFT] (H10K10/43 takes precedence)
- H10K 50/30: Organic light-emitting transistors
- H10K 59/1213: {the pixel elements being TFTs}
- H10K 59/1216: {the pixel elements being capacitors}
- H10K 59/126: Shielding, e.g. light-blocking means over the TFTs
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display device is provided. A first transistor, a second transistor, and a third transistor are disposed above the surface of a substrate. The first transistor includes a first semiconductor and a first gate electrode. The first semiconductor includes a silicon semiconductor. The first gate electrode overlaps the first semiconductor in view of the normal direction of the surface. The second transistor includes a second semiconductor including a first oxide semiconductor. The third transistor includes a third semiconductor and a third gate electrode. The third semiconductor includes a second oxide semiconductor. The third gate electrode overlaps the third semiconductor in view of the normal direction of the surface. A first electrode is disposed above and electrically connected to the third semiconductor. The first electrode overlaps the third gate electrode in a cross-sectional view of the display device.

## Claims

### Claim 1

A display device, comprising:
a substrate having a surface;
a first transistor disposed above the surface of the substrate and comprising:
a first semiconductor comprising a silicon semiconductor; and
a first gate electrode overlapping the first semiconductor in view of a normal direction of the surface;
a second transistor disposed above the surface of the substrate and comprising:
a second semiconductor comprising a first oxide semiconductor;
a third transistor disposed above the surface of the substrate and comprising:
a third semiconductor comprising a second oxide semiconductor; and
a third gate electrode overlapping the third semiconductor in view of the normal direction of the surface; and
a first electrode disposed above and electrically connected to the third semiconductor,
wherein the first electrode overlaps the third gate electrode in a cross-sectional view of the display device, and
wherein the first gate electrode is disposed under the first semiconductor.

### Claim 2 (depends on 1)

The display device as claimed in claim 1, wherein one of the first transistor, the second transistor, and the third transistor is a bottom gate structure, and another of the first transistor, the second transistor, and the third transistor is a top gate structure.

### Claim 3 (depends on 1)

The display device as claimed in claim 1, wherein the third gate electrode is disposed above the third semiconductor.

### Claim 4 (depends on 3)

The display device as claimed in claim 3, wherein a first distance between the first gate electrode and the surface of the substrate is different from a second distance between the third gate electrode and the surface of the substrate.

### Claim 5 (depends on 4)

The display device as claimed in claim 4, wherein the first distance is less than the second distance.

### Claim 6 (depends on 3)

The display device as claimed in claim 3, wherein the second transistor further comprises:
a second gate electrode overlapping the second semiconductor in view of the normal direction of the surface,
wherein the second gate electrode is disposed above the second semiconductor.

### Claim 7 (depends on 6)

The display device as claimed in claim 6, wherein a second distance between the third gate electrode and the surface of the substrate is the same as a third distance between the second gate electrode and the surface of the substrate.

### Claim 8 (depends on 1)

The display device as claimed in claim 1, wherein a fourth distance between the first semiconductor and the surface of the substrate is less than a fifth distance between the third semiconductor and the surface of the substrate.

### Claim 9 (depends on 8)

The display device as claimed in claim 8, wherein a first distance between the first gate electrode and the surface of the substrate is different from a second distance between the third gate electrode and the surface of the substrate.

### Claim 10 (depends on 9)

The display device as claimed in claim 9, wherein the first distance is less than the second distance.

### Claim 11 (depends on 8)

The display device as claimed in claim 8, wherein the first gate electrode is disposed under the first semiconductor.

### Claim 12 (depends on 8)

The display device as claimed in claim 8, wherein the third gate electrode is disposed above the third semiconductor.

### Claim 13 (depends on 1)

The display device as claimed in claim 1, further comprising:
a second electrode overlapping the first electrode in the cross-sectional view of the display device; and
an insulator layer disposed between the second electrode and the first electrode.

### Claim 14 (depends on 13)

The display device as claimed in claim 13, wherein the second electrode, the insulator layer, and the first electrode constitute a capacitor.

### Claim 15

A display device, comprising:
a substrate having a surface;
a first transistor disposed above the surface of the substrate and comprising:
a first semiconductor comprising a silicon semiconductor; and
a first gate electrode overlapping the first semiconductor in view of a normal direction of the surface;
a second transistor disposed above the surface of the substrate and comprising:
a second semiconductor comprising a first oxide semiconductor;
a third transistor disposed above the surface of the substrate and comprising:
a third semiconductor comprising a second oxide semiconductor; and
a third gate electrode overlapping the third semiconductor in view of the normal direction of the surface; and
a first electrode disposed above and electrically connected to the third semiconductor,
wherein the first electrode overlaps the third gate electrode in a cross-sectional view of the display device, and
wherein the first electrode overlaps the third semiconductor in view of the normal direction of the surface of the substrate.

### Claim 16

A display device, comprising:
a substrate having a surface;
a first transistor disposed above the surface of the substrate and comprising:
a first semiconductor comprising a silicon semiconductor; and
a first gate electrode overlapping the first semiconductor in view of a normal direction of the surface;
a second transistor disposed above the surface of the substrate and comprising:
a second semiconductor comprising a first oxide semiconductor;
a third transistor disposed above the surface of the substrate and comprising:
a third semiconductor comprising a second oxide semiconductor; and
a third gate electrode overlapping the third semiconductor in view of the normal direction of the surface;
a fourth gate electrode overlapping the third semiconductor in a cross-sectional view of the display device; and
a first electrode disposed above and electrically connected to the third semiconductor,
wherein the first electrode overlaps the third gate electrode in the cross-sectional view of the display device, and
wherein the third semiconductor is disposed between the third gate electrode and the fourth gate electrode.