# US 12,010,860 B2 · Quantum dot LED design based on resonant energy transfer

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- Number: US 12,010,860 B2
- Document ID: US12010860B2
- Status: Granted
- Kind: B2
- Application number: 17/473,705
- Filed: 2021-09-13
- Published: 2021-12-30
- Granted: 2024-06-11
- Earliest claimed: 2018-05-11
- Assignees: Shoei Chemical Inc.
- Applicants: Shoei Chemical Inc.
- Inventors: Emma Rose Dohner; Yeewah Annie Chow; Wenzhuo Guo; Christian Justus Ippen; Jason Travis Tillman; Jonathan Andrew Truskier
- Web page: https://patentgrep.com/patent/US12010860B2

## CPC

- C09K 11/025: {non-luminescent particle coatings or suspension media}
- C09K 11/62: containing gallium, indium or thallium
- C09K 11/70: containing phosphorus
- C09K 11/703: {with zinc or cadmium}
- C09K 11/883: {with zinc or cadmium}
- H01B 1/08: oxides
- H10K 50/115: comprising active inorganic nanostructures, e.g. luminescent quantum dots
- H10K 50/16: Electron transporting layers
- H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10K 2102/00: Constructional details relating to the organic devices covered by this subclass
- H10K 2102/331: {Nanoparticles used in non-emissive layers, e.g. in packaging layer}
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

Embodiments of the present application relate to illumination devices using luminescent nanostructures. An illumination device includes a first conductive layer, a second conductive layer, a hole transport layer, an electron transport layer and a material layer that includes a plurality of luminescent nanostructures. The hole transport layer and the electron transport layer are each disposed between the first conductive layer and the second conductive layer. The material layer is disposed between the hole transport layer and the electron transport layer and includes one or more discontinuities in its thickness such that the hole transport layer and the electron transport layer contact each other at the one or more discontinuities. Resonant energy transfer occurs between the luminescent nanostructures and excitons at the discontinuities.

## Claims

### Claim 1

A method of forming an illumination device, the method comprising:
disposing a first material over a conductive substrate to form a first material layer, wherein the first material layer is configured as one of a hole transport layer or an electron transport layer;
disposing a layer of luminescent nanostructures over the first material layer, wherein the layer of luminescent nanostructures comprises a plurality of luminescent nanostructures suspended in a polymer layer, wherein the layer of luminescent nanostructures comprises a plurality of discontinuities through a thickness of the layer of luminescent nanostructures, and wherein the plurality of discontinuities is randomly spread over the first material layer;
disposing a second material over the layer of luminescent nanostructures to form a second material layer, wherein the second material is configured as another of the electron transport layer or the hole transport layer, wherein the second material layer directly contacts the first material layer at planar interfaces disposed at the plurality of discontinuities of the layer of luminescent nanostructures, and wherein the planar interfaces are coplanar with a planar bottom surface of the layer of plurality of luminescent nano structures; and
disposing a conductive material over the second material layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein disposing the layer of luminescent nanostructures comprises disposing a layer of quantum dots suspended in the polymer layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein disposing the layer of luminescent nanostructures comprises disposing the layer of luminescent nanostructures using spin-coating.

### Claim 4 (depends on 1)

The method of claim 1, wherein disposing the second material comprises disposing a plurality of ZnMgO nanoparticles.

### Claim 5 (depends on 1)

The method of claim 1, wherein disposing the conductive material comprises disposing indium tin oxide (ITO).

### Claim 6 (depends on 1)

The method of claim 1, further comprising disposing an encapsulating material comprising an epoxy resin on the conductive material.

### Claim 7 (depends on 1)

The method of claim 1, further comprising disposing a hole injection layer on the conductive substrate prior to disposing the first material.