# US 12,010,847 B2 · Foundational supports within integrated assemblies > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,010,847 B2 - Document ID: US12010847B2 - Status: Granted - Kind: B2 - Application number: 17/691,993 - Filed: 2022-03-10 - Published: 2022-06-23 - Granted: 2024-06-11 - Earliest claimed: 2020-01-10 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Darwin A. Clampitt; Matthew J. King; John D. Hopkins; M. Jared Barclay - Web page: https://patentgrep.com/patent/US12010847B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/10: characterised by the top-view layout - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/40: characterised by the peripheral circuit region - H10B 43/10: characterised by the top-view layout - H10B 43/40: characterised by the peripheral circuit region - H10W 20/20: Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] - H10W 20/43: Layouts of interconnections - H10B 41/41: of a memory region comprising a cell select transistor, e.g. NAND - H10B: ELECTRONIC MEMORY DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Some embodiments include an integrated assembly having a base (e.g., a monocrystalline silicon wafer), and having memory cells over the base and along channel-material-pillars. A conductive structure is between the memory cells and the base. The channel-material-pillars are coupled with the conductive structure. A foundational structure extends into the base and projects upwardly to a level above the conductive structure. The foundational structure locks the conductive structure to the base to provide foundational support to the conductive structure. ## Claims ### Claim 1 An integrated assembly, comprising: a base; memory cells over the base and along channel-material-pillars; a conductive structure between the memory cells and the base, the conductive structure extending under each of the memory cells with the channel-material-pillars being coupled with the conductive structure; and a foundational structure comprising an insulative material extending into the base and projecting upwardly to a level above the conductive structure, an upper surface of the foundational structure being elevationally lower than all the memory cells. ### Claim 2 (depends on 1) The integrated assembly of claim 1 wherein the foundational structure penetrates entirely through the conductive structure. ### Claim 3 (depends on 2) The integrated assembly of claim 2 wherein the foundational structure is configured as a post. ### Claim 4 (depends on 3) The integrated assembly of claim 3 wherein the post comprises only a single homogeneous composition. ### Claim 5 (depends on 3) The integrated assembly of claim 3 wherein the post comprises a laminate of two or more different compositions. ### Claim 6 (depends on 1) The integrated assembly of claim 1 wherein the conductive structure penetrates through the foundational structure. ### Claim 7 (depends on 6) The integrated assembly of claim 6 wherein the foundational structure is configured as a wall. ### Claim 8 (depends on 1) The integrated assembly of claim 1 wherein the base comprises monocrystalline silicon, and wherein the foundational structure extends into the monocrystalline silicon of the base. ### Claim 9 (depends on 1) The integrated assembly of claim 1 wherein the foundational structure extends into the base to a depth within a range of from 50 nm to 1 micron. ### Claim 10 An integrated assembly, comprising: a base; memory cells over the base and along channel-material-pillars; a conductive structure extending under each of the memory cells between the memory cells and the base; the channel-material-pillars being coupled with the conductive structure; and a foundational support pins extending into the base and projecting upwardly to a level above the conductive structure, an upper surface of the support pins being below a lowest of the memory cells, the foundational support pins comprising a conductive material. ### Claim 11 (depends on 10) The integrated assembly of claim 10 wherein the foundational support pins comprise only a single homogeneous composition. ### Claim 12 (depends on 10) The integrated assembly of claim 10 wherein the foundational support pins comprise one or more of tungsten, titanium, tungsten nitride, tungsten silicide, titanium nitride and titanium silicide. ### Claim 13 An integrated assembly, comprising: a base; a conductive-source-structure over the base; a memory level over the conductive-source-structure and comprising memory cells along channel-material-pillars; and first foundational-support-pins extending into the base and projecting upwardly through the conductive-source-structure; and at least one second foundational-support-pin which anchors the memory level to the conductive-source-structure, and which does not extend into the base. ### Claim 14 (depends on 13) The integrated assembly of claim 13 wherein the memory cells are along conductive levels which include gate structures and routing structures; and further comprising: a first-circuitry-level between the base and the conductive-source-structure, the first-circuitry-level comprising a wordline-driver-circuitry and a sense-amplifier-circuitry; bitlines coupled with the channel-material-pillars; and the routing structures being coupled with the wordline-driver-circuitry and the bitlines being coupled with the sense-amplifier-circuitry. ### Claim 15 (depends on 13) The integrated assembly of claim 13 wherein the first foundational-support-pins comprise only a single homogeneous composition. ### Claim 16 (depends on 13) The integrated assembly of claim 13 wherein the first foundational-support-pins comprise an outer insulative sheath and an inner conductive core. ### Claim 17 (depends on 13) The integrated assembly of claim 13 wherein the first foundational-support-pins extend into the base to a depth of at least 50 nm.