# US 12,010,845 B2 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,010,845 B2 - Document ID: US12010845B2 - Status: Granted - Kind: B2 - Application number: 17/459,856 - Filed: 2021-08-27 - Published: 2022-03-17 - Granted: 2024-06-11 - Earliest claimed: 2020-09-14 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Katsuaki Natori; Hiroshi Toyoda; Koji Yamakawa; Takayuki Beppu; Masayuki Kitamura - Web page: https://patentgrep.com/patent/US12010845B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10D 64/037: {comprising charge-trapping insulators} - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10P 14/412: {Deposition of metallic or metal-silicide materials} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract According to one embodiment, a method for manufacturing a semiconductor device includes: (a) supplying an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; (c) supplying a reducing agent over the insulating film; and (d) repeating the steps (a) to (c). ## Claims ### Claim 1 A method for manufacturing a semiconductor device, comprising the steps of: (a) adsorbing an adsorbing material over an insulating film, wherein the adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (b) supplying a Mo material over the insulating film; and (c) supplying a reducing agent over the insulating film, wherein the insulating film is formed above a substrate, wherein the insulating film comprises a metal oxide. ### Claim 2 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: (d) repeating the steps (a) to (c); and after the step (d), repeating the steps (b) and (c). ### Claim 3 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film comprises at least one of: a metal oxide, a metal nitride, or a metal oxynitride. ### Claim 4 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the insulating film comprises aluminum oxide. ### Claim 5 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the supplying the reducing agent reduces an amount of molybdenum oxide, formed based on the adsorbing material and the Mo material. ### Claim 6 (depends on 1) The method of claim 1, wherein step (b) is performed after step (a), and step (c) is performed after step (b). ### Claim 7 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: (d) after step (c), supplying a second adsorbing material over the insulating film, wherein the second adsorbing material is selected from the group consisting of H2O, HF, NO, NO2, NF3, and combinations thereof; (e) after step (d), supplying a second Mo material over the insulating film; and (f) after step (e), supplying a second reducing agent over the insulating film. ### Claim 8 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein supplying the Mo material is performed before supplying any reducing agent over the insulating film. ### Claim 9 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the Mo material is supplied over the insulating film over which the adsorbing material has been adsorbed. ### Claim 10 (depends on 1) The method for manufacturing a semiconductor device according to claim 1, wherein the adsorbing material is adsorbed over the insulating film before supplying any Mo material over the insulating film. ### Claim 11 A method for manufacturing a semiconductor device, comprising the steps of: forming a stacked structure including first insulating films and second insulating films alternately disposed on top of one another; forming an opening through the stacked structure; forming a semiconductor film and a charge storage layer in the opening; removing the first insulating films to form cavities in the stacked structure; and forming third insulating films and molybdenum films in the cavities, respectively, wherein the step of forming molybdenum films comprises the steps of: adsorbing, over the third insulating film, at least one adsorbing material, selected from the group consisting of H2O, HF, NO, NO2 and NF3, after the formation of the third insulating films; supplying a Mo material after the adsorption of the adsorbing material; and supplying a reducing agent, and wherein the step of adsorbing an adsorbing material, the step of supplying a Mo material, and the step of supplying a reducing agent are performed repeatedly, wherein the third insulating film comprises a metal oxide. ### Claim 12 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, further comprising the step of: after performing the step of adsorbing an adsorbing material, the step of supplying a Mo material, and the step of supplying a reducing agent at least once, repeating the step of supplying a Mo material and the step of supplying a reducing agent. ### Claim 13 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, further comprising the step of: forming a molybdenum film over the third insulating film. ### Claim 14 (depends on 13) The method for manufacturing a semiconductor device according to claim 13, wherein the molybdenum film is coupled to a semiconductor channel film via the third insulating film and a charge storage film. ### Claim 15 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the third insulating films comprise at least one of: a metal oxide, a metal nitride, or a metal oxynitride. ### Claim 16 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the third insulating films comprises aluminum oxide. ### Claim 17 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, wherein at least one of the molybdenum films functions as a word line (WL). ### Claim 18 (depends on 11) The method of manufacturing a semiconductor device according to claim 11, wherein the supplying the Mo material is performed after the adsorbing the adsorbing material, and wherein the supplying the reducing agent is performed after the supplying the Mo material. ### Claim 19 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, wherein the at least one adsorbing material is adsorbed over the third insulating film before supplying any Mo material over the third insulating film. ### Claim 20 (depends on 11) The method for manufacturing a semiconductor device according to claim 11, wherein the Mo material is supplied over the third insulating film over which the at least one adsorbing material has been adsorbed.