# US 12,010,841 B2 · Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 12,010,841 B2 - Document ID: US12010841B2 - Status: Granted - Kind: B2 - Application number: 17/136,471 - Filed: 2020-12-29 - Published: 2022-06-30 - Granted: 2024-06-11 - Earliest claimed: 2020-12-29 - Assignees: SanDisk Technologies LLC - Applicants: Sandisk Technologies LLC - Inventors: Monica Titus; Senaka Kanakamedala; Rahul Sharangpani; Raghuveer S. Makala; Yao-Sheng Lee - Web page: https://patentgrep.com/patent/US12010841B2 ## CPC - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/10: characterised by the top-view layout - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/10: characterised by the top-view layout - H10B: ELECTRONIC MEMORY DEVICES ## Abstract An alternating stack of first material layers and second material layers is formed over a substrate. A hard mask layer is formed over the alternating stack. Optionally, an additional hard mask layer can be formed over the hard mask layer. A photoresist layer is applied and patterned, and cavities are formed in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer. Via openings are formed through an upper portion of the alternating stack by performing a second anisotropic etch process. A cladding liner can be optionally formed on sidewalls of the cavities in the hard mask layer. The via openings can be vertically extend through all layers within the alternating stack by performing a third anisotropic etch process. ## Claims ### Claim 1 A method of forming a semiconductor structure, comprising: forming an alternating stack of first material layers and second material layers over a substrate; forming a hard mask layer over the alternating stack; applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer; forming cavities in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer; forming via openings through an upper portion of the alternating stack by performing a second anisotropic etch process that transfers a pattern of the cavities in the hard mask layer; forming a cladding liner on sidewalls of the cavities in the hard mask layer; and vertically extending the via openings through all layers within the alternating stack by performing a third anisotropic etch process that employs a combination of the cladding liner and the hard mask layer as an etch mask; wherein the cladding liner is deposited by a selective deposition process that grows a material of the cladding liner from physically exposed surfaces of the hard mask layer without growth of the material of the cladding liner from physically exposed surfaces of the alternating stack. ### Claim 2 A method of forming a semiconductor structure, comprising: forming an alternating stack of first material layers and second material layers over a substrate; forming a hard mask layer over the alternating stack; applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer; forming cavities in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer; forming via openings through an upper portion of the alternating stack by performing a second anisotropic etch process that transfers a pattern of the cavities in the hard mask layer; forming a cladding liner on sidewalls of the cavities in the hard mask layer; and vertically extending the via openings through all layers within the alternating stack by performing a third anisotropic etch process that employs a combination of the cladding liner and the hard mask layer as an etch mask; wherein the cladding liner is deposited by a non-conformal deposition process that deposits a material of the cladding liner anisotropically with a variable thickness that decreases with a vertical distance from a horizontal plane including a top surface of the hard mask layer. ### Claim 3 A method of forming a semiconductor structure, comprising: forming an alternating stack of first material layers and second material layers over a substrate; forming a hard mask layer over the alternating stack; applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer; forming cavities in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer; forming via openings through an upper portion of the alternating stack by performing a second anisotropic etch process that transfers a pattern of the cavities in the hard mask layer; forming a cladding liner on sidewalls of the cavities in the hard mask layer; and vertically extending the via openings through all layers within the alternating stack by performing a third anisotropic etch process that employs a combination of the cladding liner and the hard mask layer as an etch mask; wherein the cladding liner comprises a metallic material selected from TiN, Ru, Co, Mo or W. ### Claim 4 (depends on 3) The method of claim 3, wherein the cladding liner comprises the TiN. ### Claim 5 (depends on 3) The method of claim 3, wherein the cladding liner comprises the Ru. ### Claim 6 (depends on 3) The method of claim 3, wherein the cladding liner comprises the Co. ### Claim 7 (depends on 3) The method of claim 3, wherein the cladding liner comprises the Mo. ### Claim 8 (depends on 3) The method of claim 3, wherein the cladding liner comprises the W. ### Claim 9 A method of forming a semiconductor structure, comprising: forming an alternating stack of first material layers and second material layers over a substrate; forming a hard mask layer over the alternating stack; applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer; forming cavities in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer; forming via openings through an upper portion of the alternating stack by performing a second anisotropic etch process that transfers a pattern of the cavities in the hard mask layer; forming a cladding liner on sidewalls of the cavities in the hard mask layer; and vertically extending the via openings through all layers within the alternating stack by performing a third anisotropic etch process that employs a combination of the cladding liner and the hard mask layer as an etch mask; wherein the hard mask layer comprises a carbon-based hard mask layer comprising at least 60% of carbon in atomic concentration. ### Claim 10 (depends on 9) The method of claim 9, further comprising forming an additional hard mask layer over the carbon-based hard mask layer prior to application of the photoresist layer, wherein the first anisotropic etch process transfers the pattern of the openings in the photoresist layer through the additional hard mask layer. ### Claim 11 (depends on 10) The method of claim 10, wherein: the additional hard mask layer has a different material composition than the carbon-based hard mask layer; and the cladding liner is deposited by a selective deposition process that grows a material of the cladding liner from physically exposed surfaces of the carbon-based hard mask layer and does not grow the material of the cladding liner from physically exposed surfaces of the additional hard mask layer. ### Claim 12 (depends on 11) The method of claim 11, wherein the carbon-based hard mask layer has a homogenous material composition throughout. ### Claim 13 (depends on 11) The method of claim 11, wherein: the carbon-based hard mask layer comprises a boron doped carbon hard mask layer which has an increasing boron concentration with a vertical distance from the substrate; and the cladding liner grows with a greater lateral thickness at an upper portion of the carbon-based hard mask layer than at a lower portion of the carbon-based hard mask layer. ### Claim 14 (depends on 13) The method of claim 13, wherein the additional hard mask layer comprises an undoped carbon hard mask layer. ### Claim 15 A method of forming a semiconductor structure, comprising: forming an alternating stack of first material layers and second material layers over a substrate; forming a hard mask layer over the alternating stack; applying and patterning a photoresist layer over the hard mask layer, wherein openings are formed in the photoresist layer; forming cavities in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer; forming via openings through an upper portion of the alternating stack by performing a second anisotropic etch process that transfers a pattern of the cavities in the hard mask layer; forming a cladding liner on sidewalls of the cavities in the hard mask layer; and vertically extending the via openings through all layers within the alternating stack by performing a third anisotropic etch process that employs a combination of the cladding liner and the hard mask layer as an etch mask; further comprising forming a memory film and a vertical semiconductor channel in each respective via opening and replacing the second material layers with electrically conductive word lines to form a three-dimensional memory device. ### Claim 16 A method of forming a semiconductor structure, comprising: forming an alternating stack of first material layers and second material layers over a substrate; forming a vertical stack including a first hard mask layer comprising a boron doped carbon-based material and a second hard mask layer having a different material composition than the first hard mask layer over the alternating stack; applying and patterning a photoresist layer over second hard mask layer, wherein openings are formed in the photoresist layer; forming cavities in the vertical stack by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the vertical stack; forming via openings through an upper portion of the alternating stack by performing a second anisotropic etch process that transfers a pattern of the cavities in the layer stack; and vertically extending the via openings through all layers within the alternating stack by performing a third anisotropic etch process. ### Claim 17 (depends on 16) The method of claim 16, wherein the second hard mask layer is entirely consumed during the third anisotropic etch process. ### Claim 18 (depends on 16) The method of claim 16, further comprising depositing a cladding liner on sidewalls of the cavities in the boron doped carbon-based hard mask layer, wherein the third anisotropic etch process employs a combination of the cladding liner, the second hard mask layer, and the first hard mask layer as an etch mask. ### Claim 19 (depends on 18) The method of claim 18, wherein the cladding liner is deposited by a selective deposition process that grows a material of the cladding liner from physically exposed surfaces of the first hard mask layer and does not grow the material of the cladding liner from physically exposed surfaces of the second hard mask layer. ### Claim 20 (depends on 19) The method of claim 19, wherein the cladding liner comprises tungsten. ### Claim 21 (depends on 19) The method of claim 19, wherein: the first hard mask layer has an increasing boron concentration with a vertical distance from the substrate; and the cladding liner grows with a greater lateral thickness at an upper portion of the first hard mask layer than at a lower portion of the first hard mask layer. ### Claim 22 (depends on 16) The method of claim 16, further comprising forming a memory film and a vertical semiconductor channel in each respective via opening and replacing the second material layers with electrically conductive word lines to form a three-dimensional memory device.